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Formula Sheet Angintr Final 2016a
Formula Sheet Angintr Final 2016a
Formula Sheet Angintr Final 2016a
Diode
Cathode Anode
K A
n p
E for p 0 E for n 0
n+ vD / VT p
n p ( 0) n po e
npo>> pno
K iD A
Thermal equilibrium
concentration
*
npo
"open"
pno
Depletion
region Ln Diffusion length
x
0
vD
*
n p (0) n po
i D j D A Dn q A
Ln
*
n p oe v D / VT
n po id di
(1) Dn q A (3) gd D
Ln vd dvD Q
A Dn q n po
( e vD /VT 1) I DS ( e vD / VT 1)
L
n
I DS
kT 1
(2) VT 26 mV (4) rd
q T 300 K gd
BJT
Injection Extraction
W
W'
n++ p+ n
*
E iE iC C
iB iR
pCo vCE
nBo
pEo
B'
rB C C
p
n
B
B B
iB p
n n
p
E E
IC
hfeib C ic
i'c
gmv'be
IC i"c
IB
IB VCE VCE
rb
B B' IC
vce
ib i'c ro
V re
ib IB hrevce
IB i"C
ib
E IE
VBE+ v'be
nBo ev BE / VT nBo
iC Dn q ABE iR ABE ev BE / VT
Dn q
iC
(1) w (4) F w
iB D p q ABE pEo v BE / VT
e
L pE
D p q ABE pEo iC
(2) iB (ev BE / VT 1) (5) F
L iE
pE
i BS i B i BS
ic
(3) iE iC iB ICS evBE / VT I BS evBE / VT (6) h fe F
ib Q , v ce 0
ic 1 ib
(7) f (10)
ie hie vbe v
Q , vce 0 ce 0
1 i 1 ic
(8) e ( 11) hoe
re vbe v roe vce
ce 0 Q , ib 0
ic vbe
(9) gm (12) hre
vbe vce Q , ib 0
Q , vce 0
i ki i ki
(1+k) Z 1+k Z
Z
k
vin vo vin vo
V V V
FET
I *DSS
iD ( vGS Vt ) 2 (1 v DS / V A )
Vt (1 V *DS / V A )
2
1 v DS / V A id
(1) I *DSS (1 vGS / Vt ) 2 (3) gm
1 V *DS / V A vgs
Q , v ds 0
I DSS
I DSS (1 vGS / Vt ) 2
VA VDS
(2) VDS V p VGS Vt (active region) (4) ro
ID
Differential Amplifier
v a vb Av
(1) v va vb (2) vcm (3) CMRR 20 log10
2 Avcm
Feedback
so AOL
(1) ACL G G fwd
ss 1 AOL
Blackman formula:
1 RRSC DSFSC
(7) Rx Rx Rx
1 RROC DSFOC
Barkhausen criterion
AOL
(1) H ( s) (2) AOL ( j1 ) 1
1 AOL ( s)
ZXTAL(j)
jLXTAL
Inductor
s 1 p
Capacitor
1
s R 0
LCs
2 L '2
R R '(1 ) 0 R '(1 Q 2 )
1 R 0 1 R '2
0 ; Q ; ;
LC 0 L 2Q 2 RC R '2 1
L L '(1 2 2 ) 0 L '(1 2 )
L' Q
High frequency response
(VBE v be ) / V
n Bo e T
n++ p+ n
VBE / V
T
n Bo e dQd
E iE iC VCE C
iB iR
pCo
nBo
pEo
B' E B' C
C C
rB
B
B'
C