4H11G(NPN)

5H11G(PNP)
Preferred Device

Complementary Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose power and switching such as output or
driver stages in applications such as switching regulators, converters,
and power amplifiers. SILICON
Features POWER TRANSISTORS
• Pb−Free Packages are Available 8 AMPERES
• Lead Formed for Surface Mount Application in Plastic Sleeves 80 VOLTS
(No Suffix) 20 WATTS
• Straight Lead Version in Plastic Sleeves (“−1” Suffix)
• Lead Formed Version in 16 mm Tape and Reel for Surface Mount MARKING
(“T4” Suffix) DIAGRAMS
• Electrically Similar to Popular D44H/D45H Series
• Low Collector Emitter Saturation Voltage − 4
DPAK YWW
VCE(sat) = 1.0 Volt Max @ 8.0 Amperes J4
• Fast Switching Speeds 1 2
CASE 369C
STYLE 1 xH11
• Complementary Pairs Simplifies Designs 3

• Epoxy Meets UL 94, V−0 @ 0.125 in

• ESD Ratings: Human Body Model, 3B
8000 V 4

Machine Model, C
400 V DPAK−3 YWW

CASE 369D J4
MAXIMUM RATINGS STYLE 1 xH11
1
Rating Symbol Max Unit 2
3
Collector−Emitter Voltage VCEO 80 Vdc
Emitter−Base Voltage VEB 5 Vdc Y = Year
Collector Current − Continuous IC 8 Adc WW = Work Week
16 x = 4 or 5
Peak
Total Power Dissipation @ TC = 25°C PD 20 W
Derate above 25°C 0.16 W/°C

Total Power Dissipation* @ TA = 25°C PD 1.75 W

Derate above 25°C 0.014 W/°C
Operating and Storage Junction Temperature TJ, Tstg −55 to °C
Range + 150
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RJC 6.25 °C/W
Thermal Resistance, Junction−to−Ambient* RJA 71.4 °C/W
Lead Temperature for Soldering TL 260 °C
*These ratings are applicable when surface mounted on the minimum pad sizes
recommended.

http://www.Datasheet4U.com
 4H11 (NPN) 5H11 (PNP)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25
C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ Characteristic Symbol Min Typ Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Collector−Emitter Sustaining Voltage VCEO(sus) 80 − − Vdc
(IC = 30 mA, IB = 0)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Collector Cutoff Current

ÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎ
(VCE = Rated VCEO, VBE = 0)
ICES − − 10
A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
Emitter Cutoff Current
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VEB = 5 Vdc)

ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
IEBO − − 50
A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Collector−Emitter Saturation Voltage VCE(sat) − − 1 Vdc
(IC = 8 Adc, IB = 0.4 Adc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
(IC = 8 Adc, IB = 0.8 Adc)
ÎÎÎ
Base−Emitter Saturation Voltage VBE(sat) − − 1.5 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
(VCE = 1 Vdc, IC = 2 Adc) ÎÎÎ
ÎÎÎ
ÎÎÎ
hFE 60 − − −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ
(VCE = 1 Vdc, IC = 4 Adc)

ÎÎÎ
ÎÎÎ
40 − −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Collector Capacitance Ccb pF
(VCB = 10 Vdc, ftest = 1 MHz) MJD44H11

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
− 130 −
MJD45H11 − 230 −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
Gain Bandwidth Product

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎ
(IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz) MJD44H11
fT
− 50 −
MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
MJD45H11 − 40 −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SWITCHING TIMES

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Delay and Rise Times td + tr ns

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
(IC = 5 Adc, IB1 = 0.5 Adc) MJD44H11 − 300 −
MJD45H11 − 135 −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Storage Time
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎ
ÎÎÎ
(IC = 5 Adc, IB1 = IB2 = 0.5 Adc) MJD44H11
ts
− 500 −
ns

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
MJD45H11 − 500 −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Fall Time tf ns

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
(IC = 5 Adc, IB1 = IB2 = 0.5 Adc) MJD44H11 − 140 −
MJD45H11 − 100 −
 4H11 (NPN) 5H11 (PNP)

1
0.7
D = 0.5
r(t), EFFECTIVE TRANSIENT THERMAL
0.5
RESISTANCE (NORMALIZED)

0.3 0.2
0.2 P(pk)
0.1 RJC(t) = r(t) RJC
RJC = 6.25°C/W MAX
0.1 0.05 D CURVES APPLY FOR POWER
0.07 PULSE TRAIN SHOWN
0.02 t1
0.05 READ TIME AT t1 t2
0.03 0.01 TJ(pk) − TC = P(pk) JC(t)
DUTY CYCLE, D = t1/t2
0.02 SINGLE PULSE

0.01
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500 1k
t, TIME (ms)

Figure 1. Thermal Response

20 There are two limitations on the power handling ability of

10 100
s a transistor: average junction temperature and second
500
s
IC, COLLECTOR CURRENT (AMP)

5 breakdown. Safe operating area curves indicate I C − V CE

3 dc 5ms 1ms limits of the transistor that must be observed for reliable
2 operation; i.e., the transistor must not be subjected to greater
1 dissipation than the curves indicate.
0.5 THERMAL LIMIT @ TC = 25°C The data of Figure 2 is based on T J(pk) = 150
C; T C is
0.3 WIRE BOND LIMIT variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
0.1  150
C. T J(pk) may be calculated from the data in
0.05 Figure 1. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
0.02 limitations imposed by second breakdown.
1 3 5 7 10 20 30 50 70 100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 2. Maximum Forward Bias

Safe Operating Area

TA TC
2.5 25
PD, POWER DISSIPATION (WATTS)

2 20

TC
1.5 15

1 10 TA
SURFACE
MOUNT
0.5 5

0 0
25 50 75 100 125 150
T, TEMPERATURE (°C)
Figure 3. Power Derating

4
 4H11 (NPN) 5H11 (PNP)

1000 1000
hFE, DC CURRENT GAIN

hFE, DC CURRENT GAIN

VCE = 4 V
VCE = 4 V
100 100

1V
VCE = 1 V
TJ = 25°C TJ = 25°C

10 10
0.1 11 0 0.1 11 0
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 4. 4H11 DC Current Gain Figure 5. 5H11 DC Current Gain

1000 1000

TJ = 125°C
hFE , DC CURRENT GAIN

hFE , DC CURRENT GAIN

TJ = 125°C 25°C
−
40 °C
25°C
100 100
−
40 °C

VCE = 1 V
VCE = 1 V

10 10
0.1 11 0 0.1 11 0
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 6. 4H11 Current Gain Figure 7. 5H11 Current Gain

versus Temperature versus Temperature

1.2 1.2

1 1
SATURATION VOLTAGE (VOLTS)

SATURATION VOLTAGE (VOLTS)

VBE(sat) VBE(sat)

0.8 0.8

0.6 0.6
IC/IB = 10 IC/IB = 10
0.4 TJ = 25°C 0.4 TJ = 25°C
VCE(sat) 10
0.2 VCE(sat) 0.2

0 0
0.1 11 0 0.1 1
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 8. 4H11 On−Voltages Figure 9. 5H11 On−Voltages

5
 4H11 (NPN) 5H11 (PNP)

PACKAGE DIMENSIONS

DPAK
CASE 369C
ISSUE O

NOTES:
−T− SEATING
PLANE 1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
B C 2. CONTROLLING DIMENSION: INCH.

V R E INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.235 0.245 5.97 6.22
B 0.250 0.265 6.35 6.73
4
C 0.086 0.094 2.19 2.38
Z D 0.027 0.035 0.69 0.88
A E 0.018 0.023 0.46 0.58
S F 0.037 0.045 0.94 1.14
1 2 3
U G 0.180 BSC 4.58 BSC
K H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.102 0.114 2.60 2.89
F L 0.090 BSC 2.29 BSC
J
R 0.180 0.215 4.57 5.45
L H S 0.025 0.040 0.63 1.01
U 0.020 −−− 0.51 −−−
D 2 PL V 0.035 0.050 0.89 1.27
Z 0.155 −−− 3.93 −−−
G 0.13 (0.005) M T
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR

SOLDERING FOOTPRINT*

6.20 3.0
0.244 0.118
2.58
0.101

5.80 1.6 6.172

0.228 0.063 0.243

SCALE 3:1 inches

mm 

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

6
 4H11 (NPN) 5H11 (PNP)

PACKAGE DIMENSIONS

DPAK−3
CASE 369D−01
ISSUE B

C NOTES:
B 1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
V R E 2. CONTROLLING DIMENSION: INCH.

INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
Z A 0.235 0.245 5.97 6.35
A B 0.250 0.265 6.35 6.73
S C 0.086 0.094 2.19 2.38
1 2 3 D 0.027 0.035 0.69 0.88
E 0.018 0.023 0.46 0.58
−T− F 0.037 0.045 0.94 1.14
G 0.090 BSC 2.29 BSC
SEATING
PLANE K H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.350 0.380 8.89 9.65
R 0.180 0.215 4.45 5.45
S 0.025 0.040 0.63 1.01
J
F V 0.035 0.050 0.89 1.27
H Z 0.155 −−− 3.93 −−−
D 3 PL
STYLE 1:
G 0.13 (0.005) M T PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR