IGBT MODULE ( N series ) n Outline Drawing

n Features
• Square RBSOA
• Low Saturation Voltage
• Less Total Power Dissipation
• Improved FWD Characteristic
• Minimized Internal Stray Inductance
• Overcurrent Limiting Function (~3 Times Rated Current)

n Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply

n Maximum Ratings and Characteristics n Equivalent Circuit

• Absolute Maximum Ratings ( Tc=25°C)
Items Symbols Ratings Units
Collector-Emitter Voltage VCES 600 V
Gate -Emitter Voltage VGES ± 20 V
Continuous IC 150
Collector 1ms IC PULSE 300
A
Current Continuous -IC 150
1ms -IC PULSE 300
Max. Power Dissipation PC 600 W
Operating Temperature Tj +150 °C
Storage Temperature Tstg -40 ∼ +125 °C
Isolation Voltage A.C. 1min. Vis 2500 V
Mounting *1 3.5
Screw Torque Nm
Terminals *2 3.5
Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5)

• Electrical Characteristics ( at Tj=25°C )

Items Symbols Test Conditions Min. Typ. Max. Units
Zero Gate Voltage Collector Current ICES VGE=0V VCE=600V 1.0 mA
Gate-Emitter Leackage Current IGES VCE=0V VGE=± 20V 15 µA
Gate-Emitter Threshold Voltage VGE(th) VGE=20V IC=150mA 4.5 7.5 V
Collector-Emitter Saturation Voltage VCE(sat) VGE=15V IC=150A 2.8 V
Input capacitance Cies VGE=0V 9900
Output capacitance Coes VCE=10V 2200 pF
Reverse Transfer capacitance Cres f=1MHz 1000
tON VCC=300V 0.6 1.2
Turn-on Time
tr IC=150A 0.2 0.6
µs
tOFF VGE=± 15V 0.6 1.0
Turn-off Time
tf RG=16Ω 0.2 0.35
Diode Forward On-Voltage VF IF=150A VGE=0V 3.0 V
Reverse Recovery Time trr IF=150A 300 ns

• Thermal Characteristics
Items Symbols Test Conditions Min. Typ. Max. Units
Rth(j-c) IGBT 0.21
Thermal Resistance Rth(j-c) Diode 0.47 °C/W
Rth(c-f) With Thermal Compound 0.05
 Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage
T j=25°C T j=125°C
250 250

V GE =20V,15V,12V V GE =20V,15V, 12V

200 200
[A]

[A]
C

C
Collector current : I

150 150

Collector current : I
10V 10V

100 100

50 50
8V
8V
0 0
0 1 2 3 4 5 6 0 1 2 3 4 5 6
Collector-Emitter voltage : V CE [V] Collector-Emitter voltage : V CE [V]

Collector-Emitter vs. Gate-Emitter voltage Collector-Emitter vs. Gate-Emitter voltage

T j=25°C T j=125°C

10 10
[V]

[V]
CE

CE

8 8
Collector-Emitter voltage : V

Collector-Emitter voltage : V

6 6

IC=
4 IC= 4
200A
200A
100A 100A
2 2
50A 50A

0 0
0 5 10 15 20 25 0 5 10 15 20 25
Gate-Emitter voltage : V GE [V] Gate-Emitter voltage : V GE [V]

Switching time vs. Collector current Switching time vs. Collector current
V CC =300V, R G =24 Ω , V GE =±15V, T j=25°C V CC =300V, R G =24 Ω , V GE =±15V, Tj=125°C

1000 1000
t off
t on t on
, t r , t off , t f [nsec]

, t r , t off , t f [nsec]

t off
tr
tf
tr
tf
on

on

100 100
Switching time : t

Switching time : t

10 10
0 50 100 150 0 50 100 150
Collector current : I C [A] Collector current : I C [A]
 Switching time vs. R G Dynamic input characteristics
V CC =300V, I C =100A, V GE =±15V, T j=25°C T j=25°C
500
25
V CC =200V
t on
, t r , t off , t f [nsec]

[V]
1000 t off 300V
400 20

CE
400V

Collector-Emitter voltage : V
tr
300 15
tf
on

100
Switching time : t

200 10

100 5

10 0 0
10 100 0 100 200 300 400 500 600
Gate resistance : R G [W] Gate charge : Q G [nC]

Forward current vs. Forward voltage Reverse recovery characteristics

V GE = O V t rr , I rr vs. I F
250
t rr 125°C
T j=125°C 25°C
rr [nsec]

200
[A] rr

100
[A] F

Reverse recovery current : I

:t

150 I rr 125°C
Forward current : I

t rr 25°C
Reverse recovery time

100 I rr 25°C

50

0 10
0 1 2 3 4 0 50 100 150
Forward voltage : V F [V] Forward current : I F [A]

Reversed biased safe operating area

Transient thermal resistance +V GE =15V, -V GE <15V, T j<125°C, R G >24 Ω
1 1000
Diode
[°C/W]

800
IGBT
[A]
th(j-c)

SCSOA
600
Collector current : I

(non-repetitive pulse)
Thermal resistance : R

0,1

400

200

RBSOA (Repetitive pulse)

0,01 0
0,001 0,01 0,1 1 0 100 200 300 400 500 600
Pulse width : PW [sec] Collector-Emitter voltage : V CE [V]
 Switching loss vs. Collector current Capacitance vs. Collector-Emitter voltage
V CC=300V, R G =24 Ω , V GE =±15V T j=25°C
10

E off 125°C
, E off , E rr [mJ/cycle]

, C oes , C res [nF]

10
8
C ies

E off 25°C
6

ies
on

E on 125°C
1

Capacitance : C
4
Switching loss : E

E on 25°C C oes

C res
2

E rr 125°C
E rr 25°C
0 0,1
0 50 100 150 200 0 5 10 15 20 25 30 35
Collector Current : I C [A] Collector-Emitter Voltage : V CE [V]

Fuji Electric GmbH Fuji Electric (UK) Ltd.

Lyoner Straße 26 Commonwealth House
2 Chalkhill Road Hammersmith
D-60528 Frankfurt/M London W6 8DW, UK
Tel.: 069 - 66 90 29 - 0 Tel.: 0181 - 233 11 30
Fax.: 069 - 66 90 29 - 56 Fax.: 0181 - 233 11 60

Specification is subject to change without notice May 97