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NPN Silicon: Semiconductor Technical Data
NPN Silicon: Semiconductor Technical Data
NPN Silicon: Semiconductor Technical Data
NPN Silicon
COLLECTOR
3
*Motorola Preferred Device
2
BASE
1
EMITTER
3
2
1
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector – Emitter Voltage VCEO 15 Vdc CASE 22–03, STYLE 1
TO–18 (TO–206AA)
Collector – Emitter Voltage VCES 40 Vdc
Collector– Base Voltage VCBO 40 Vdc
Emitter– Base Voltage VEBO 4.5 Vdc
Collector Current (10 ms pulse) IC(Peak) 500 mA
Collector Current — Continuous IC 200 mA
Total Device Dissipation @ TA = 25°C PD 0.36 Watt
Derate above 25°C 2.06 mW/°C
Total Device Dissipation @ TC = 100°C PD 0.68 Watts
Derate above 100°C 6.85 mW/°C
Operating and Storage Junction TJ, Tstg – 65 to +200 °C
Temperature Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RqJA 486 °C/W
Thermal Resistance, Junction to Case RqJC 147 °C/W
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 10 mA, VBE = 0) V(BR)CES 40 — Vdc
Collector – Emitter Sustaining Voltage(1) (IC = 10 mAdc, IB = 0) VCEO(sus) 15 — Vdc
Collector – Base Breakdown Voltage (IC = 10 mA, IB = 0) V(BR)CBO 40 — Vdc
Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 4.5 — Vdc
Collector Cutoff Current ICBO mAdc
(VCB = 20 Vdc, IE = 0) 2N2369 — 0.4
(VCB = 20 Vdc, IE = 0, TA = 150°C) 2N2369A — 30
Collector Cutoff Current ICES — 0.4 mAdc
(VCE = 20 Vdc, VBE = 0) 2N2369A
Base Current IB — 0.4 mAdc
(VCE = 20 Vdc, VBE = 0) 2N2369A
SWITCHING CHARACTERISTICS
Storage Time ts — 13 ns
(IC = IB1 = 10 mAdc, IB2 = –10 mAdc)
Turn–On Time ton — 12 ns
(IC = 10 mAdc, IB1 = 3.0 mA, IB2 = –1.5 mA, VCC = 3.0 Vdc)
Turn–Off Time toff — 18 ns
(IC = 10 mAdc, IB1 = 3.0 mA, IB2 = –1.5 mA, VCC = 3.0 Vdc)
t1 270 Ω t1 270 Ω
+10.6 V 3V +10.75 V
0 0
–1.5 V < 1 ns –9.15 V
3.3 k Cs* < 4 pF < 1 ns 3.3 k Cs* < 4 pF
PULSE WIDTH (t1) = 300 ns PULSE WIDTH (t1) = 300 ns
DUTY CYCLE = 2% DUTY CYCLE = 2%
95 Ω t1 95 Ω
t1 10 V 10 V
+10.8 V +11.4 V
0
0 –8.6 V
–2 V 1k Cs* < 12 pF
< 1 ns 1k Cs* < 12 pF < 1 ns
PULSE WIDTH (t1) = 300 ns PULSE WIDTH (t1) BETWEEN 1N916
DUTY CYCLE = 2% 10 AND 500 µs
DUTY CYCLE = 2%
TO OSCILLOSCOPE
TURN–ON WAVEFORMS
INPUT IMPEDANCE = 50 Ω
Vin 0.1 µF RISE TIME = 1 ns
10% 220 Ω
0 Vout TURN–OFF WAVEFORMS
Vout 3.3 kΩ
90% Vin 0 10%
ton Vin
3.3 k 50 Ω
0.0023 µF 0.0023 µF 90%
PULSE GENERATOR 50 Ω 0.005 µF 0.005 µF
Vout
Vin RISE TIME < 1 ns
SOURCE IMPEDANCE = 50 Ω VBB = +12 V
VBB +– 0.1 µF 0.1 µF +V =3V
PW ≥ 300 ns – CC toff Vin = –15 V
DUTY CYCLE < 2%
6 100
5 TJ = 25°C LIMIT βF = 10
TYPICAL VCC = 10 V
50
4 VOB = 2 V
SWITCHING TIMES (nsec)
CAPACITANCE (pF)
Cib tf
3 Cob tr (VCC = 3 V)
20 VCC = 10 V
tr
2 10
5 ts
td
1 2
0.1 0.2 0.5 1.0 2.0 5.0 10 1 2 5 10 20 50 100
REVERSE BIAS (VOLTS) IC, COLLECTOR CURRENT (mA)
10 pF MAX
100 ∆V
0
< 1 ns Cs* < 4 pF
50 4.3 k
PULSE WIDTH (t1) = 5 µs
QA, VCC = 10 V DUTY CYCLE = 2%
20 QA, VCC = 3 V
Figure 9. QT Test Circuit
10
1 2 5 10 20 50 100
IC, COLLECTOR CURRENT (mA)
t1 980
C < COPT +6 V 10 V
C=0 0
C COPT –4 V
< 1 ns 500 Cs* < 3 pF
PULSE WIDTH (t1) = 300 ns
TIME
DUTY CYCLE = 2%
Figure 10. Turn–Off Waveform Figure 11. Storage Time Equivalent Test Circuit
VCE , MAXIMUM COLLECTOR–EMITTER VOLTAGE (VOLTS)
1.0
TJ = 25°C
0.8
IC = 3 mA IC = 10 mA IC = 30 mA IC = 50 mA IC = 100 mA
0.6
0.4
0.2
0.02 0.05 0.1 0.2 0.5 1 2 5 10 20
IB, BASE CURRENT (mA)
–55°C
20
1 2 5 10 20 50 100
IC, COLLECTOR CURRENT (mA)
1.4 1.0
βF = 10
V(sat) , SATURATION VOLTAGE (VOLTS)
0.2 –2.5
1 2 5 10 20 50 100 0 10 20 30 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 14. Saturation Voltage Limits Figure 15. Typical Temperature Coefficients
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
–A– Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
B 3. DIMENSION J MEASURED FROM DIMENSION A
MAXIMUM.
E 4. DIMENSION F APPLIES BETWEEN DIMENSION P
C AND L. DIMENSION D APPLIES BETWEEN
DIMENSION L AND K MINIMUM. LEAD DIAMETER
SEATING
–T– PLANE IS UNCONTROLLED IN DIMENSION P AND
BEYOND DIMENSION K MINIMUM.
F L
P 5. DIMENSION E INCLUDES THE TAB THICKNESS.
K (TAB THICKNESS IS 0.51(0.002) MAXIMUM).
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
STYLE 1: A 0.209 0.230 5.31 5.84
PIN 1. EMITTER B 0.178 0.195 4.52 4.95
D 3 PL C 0.170 0.210 4.32 5.33
2. BASE
0.36 (0.014) M T A M H M 3. COLLECTOR D 0.016 0.021 0.406 0.533
E ––– 0.030 ––– 0.762
F 0.016 0.019 0.406 0.483
N G 0.100 BSC 2.54 BSC
N H 0.036 0.046 0.914 1.17
–H– 2 J 0.028 0.048 0.711 1.22
1 3 G K 0.500 ––– 12.70 –––
L 0.250 ––– 6.35 –––
J M 45 _BSC 45_BSC
M N 0.050 BSC 1.27 BSC
CASE 22–03 P ––– 0.050 ––– 1.27
(TO–206AA)
ISSUE R
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*2N2369/D*
6 ◊ 2N2369/D
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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