MOSFET

MetalOxideSemiconductorFieldEffectTransistor

OptiMOSTM
OptiMOSTMPower-MOSFET,30V
IPT004N03L

DataSheet
Rev.2.0
Final

PowerManagement&Multimarket
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IPT004N03L

1Description HSOF

Features
Tab
•Optimizedfore-fuseandORingapplication
•Verylowon-resistanceRDS(on)@VGS=4.5V
•100%avalanchetested
•Superiorthermalresistance 12
34
•N-channel 56
78
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant

Table1KeyPerformanceParameters
Drain
Parameter Value Unit Tab

VDS 30 V
RDS(on),max 0.4 mΩ Gate
Pin 1

ID 300 A Source
Pin 2-8
QOSS 141 nC
QG(0V..10V) 252 nC

Type/OrderingCode Package Marking RelatedLinks

IPT004N03L PG-HSOF-8-1 004N03L -

1)
J-STD20 and JESD22
Final Data Sheet 2 Rev.2.0,2014-10-08
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TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Final Data Sheet 3 Rev.2.0,2014-10-08

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2Maximumratings
atTj=25°C,unlessotherwisespecified

Table2Maximumratings
at 25 °C
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
- - 300 VGS=10V,TC=25°C
- - 300 VGS=10V,TC=100°C
Continuous drain current ID - - 300 A VGS=4.5V,TC=25°C
- - 300 VGS=4.5V,TC=100°C
- - 72 VGS=10V,TA=25°C,RthJA=40K/W1)
Pulsed drain current2) ID,pulse - - 1200 A TC=25°C
Avalanche energy, single pulse3) EAS - - 830 mJ ID=150A
Gate source voltage VGS -20 - 20 V -
- - 300 TC=25°C
Power dissipation Ptot W
- - 3.8 TA=25°C,RthJA=40K/W1)
IEC climatic category; DIN IEC 68-1:
Operating and storage temperature Tj,Tstg -55 - 150 °C
55/150/56

3Thermalcharacteristics

Table3Thermalcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Thermal resistance, junction - case RthJC - - 0.5 K/W -
- - 40 6 cm² cooling area1)
Device on PCB RthJA K/W
- - 62 minimum footprint

1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
Final Data Sheet 4 Rev.2.0,2014-10-08
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4Electricalcharacteristics

Table4Staticcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 30 - - V VGS=0V,ID=10mA
Gate threshold voltage VGS(th) 0.7 - 2.2 V VDS=VGS,ID=250µA
- 0.1 10 VDS=30V,VGS=0V,Tj=25°C
Zero gate voltage drain current IDSS µA
- 10 100 VDS=30V,VGS=0V,Tj=125°C
Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V
- 0.44 0.5 VGS=4.5V,ID=150A
Drain-source on-state resistance RDS(on) mΩ
- 0.37 0.4 VGS=10V,ID=150A
Gate resistance RG 1.4 2.7 5.4 Ω -
Transconductance gfs 160 320 - S |VDS|>2|ID|RDS(on)max,ID=30A

Table5Dynamiccharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Input capacitance Ciss - 18000 24000 pF VGS=0V,VDS=15V,f=1MHz
Output capacitance Coss - 5400 7200 pF VGS=0V,VDS=15V,f=1MHz
Reverse transfer capacitance Crss - 590 - pF VGS=0V,VDS=15V,f=1MHz
VDD=15V,VGS=10V,ID=30A,
Turn-on delay time td(on) - 30 - ns
RG,ext=1.6Ω
VDD=15V,VGS=10V,ID=30A,
Rise time tr - 17 - ns
RG,ext=1.6Ω
VDD=15V,VGS=10V,ID=30A,
Turn-off delay time td(off) - 149 - ns
RG,ext=1.6Ω
VDD=15V,VGS=10V,ID=30A,
Fall time tf - 37 - ns
RG,ext=1.6Ω

Table6Gatechargecharacteristics1)
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Gate to source charge Qgs - 40 53 nC VDD=15V,ID=30A,VGS=0to4.5V
Gate charge at threshold Qg(th) - 29 - nC VDD=15V,ID=30A,VGS=0to4.5V
Gate to drain charge Qgd - 28 36 nC VDD=15V,ID=30A,VGS=0to4.5V
Switching charge Qsw - 38 - nC VDD=15V,ID=30A,VGS=0to4.5V
Gate charge total Qg - 122 163 nC VDD=15V,ID=30A,VGS=0to4.5V
Gate plateau voltage Vplateau - 2.2 - V VDD=15V,ID=30A,VGS=0to4.5V
Gate charge total Qg - 252 336 nC VDD=15V,ID=30A,VGS=0to10V
Gate charge total, sync. FET Qg(sync) - 105 - nC VDS=0.1V,VGS=0to4.5V
Output charge Qoss - 141 188 nC VDD=15V,VGS=0V

1)
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet 5 Rev.2.0,2014-10-08
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IPT004N03L

Table7Reversediode
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Diode continuous forward current IS - - 300 A TC=25°C
Diode pulse current IS,pulse - - 1200 A TC=25°C
Diode forward voltage VSD - 0.83 1 V VGS=0V,IF=150A,Tj=25°C
Reverse recovery charge Qrr - 100 - nC VR=15V,IF=100A,diF/dt=400A/µs

Final Data Sheet 6 Rev.2.0,2014-10-08

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5Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation Diagram2:Draincurrent
350 350

300 300

250 250

200 200
Ptot[W]

150 ID[A] 150

100 100

50 50

0 0
0 40 80 120 160 200 0 40 80 120 160 200
TC[°C] TC[°C]
Ptot=f(TC) ID=f(TC);VGS≥10V

Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance
4
10 101

1 µs
103
10 µs
100
100 µs

1 ms
102 0.5
10 ms
ZthJC[K/W]
ID[A]

10-1 0.2
DC
0.1
101
0.05

0.02
10-2
0
10 0.01

single pulse

10-1 10-3
10-1 100 101 102 10-6 10-5 10-4 10-3 10-2 10-1 100
VDS[V] tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp ZthJC=f(tp);parameter:D=tp/T

Final Data Sheet 7 Rev.2.0,2014-10-08

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IPT004N03L

Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance
1200 0.6
10 V 3.2 V
4.5 V
4V 3.5 V
1000 5V 3.2 V 0.5
3.5 V 4V
4.5 V
5V
800 0.4 7V 8V
10 V
3V

RDS(on)[mΩ]
ID[A]

600 0.3

2.8 V
400 0.2

200 0.1

0 0.0
0 1 2 3 0 100 200 300 400 500 600 700
VDS[V] ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS

Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance
1200 800

700
1000

600

800
500
gfs[S]
ID[A]

600 400

300
400

200
175 °C
25 °C
200
100

0 0
0 1 2 3 4 5 0 40 80 120 160
VGS[V] ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj gfs=f(ID);Tj=25°C

Final Data Sheet 8 Rev.2.0,2014-10-08

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IPT004N03L

Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage
1.0 2.5

0.8 2.0

0.6 1.5
1 mA
RDS(on)[mΩ]

VGS(th)[V]
0.4 typ 1.0

0.2 0.5

0.0 0.0
-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180
Tj[°C] Tj[°C]
RDS(on)=f(Tj);ID=150A;VGS=10V VGS(th)=f(Tj);VGS=VDS;ID=1mA

Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode
5
10 104

103
Ciss
104
C[pF]

IF[A]

Coss
102

25 °C
103 175 °C
1
10
Crss

102 100
0 5 10 15 20 25 0.0 0.5 1.0 1.5
VDS[V] VSD[V]
C=f(VDS);VGS=0V;f=1MHz IF=f(VSD);parameter:Tj

Final Data Sheet 9 Rev.2.0,2014-10-08

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IPT004N03L

Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge
103 12

15 V
10
6V
24 V

102 25 °C 8
100 °C
125 °C

VGS[V]
IAV[A]

101 4

100 0
100 101 102 103 0 50 100 150 200 250 300
tAV[µs] Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=30Apulsed;parameter:VDD

Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms

34

32

30

28
VBR(DSS)[V]

26

24

22

20
-60 -20 20 60 100 140 180
Tj[°C]
VBR(DSS)=f(Tj);ID=10mA

Final Data Sheet 10 Rev.2.0,2014-10-08

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IPT004N03L

6PackageOutlines

1) partially covered with Mold Flash

MILLIMETERS INCHES
DIM
MIN MAX MIN MAX
DOCUMENT NO.
A 2.20 2.40 0.087 0.094
Z8B00169619
b 0.70 0.90 0.028 0.035
b1 9.70 9.90 0.382 0.390
b2 0.42 0.50 0.017 0.020 SCALE 0
c 0.40 0.60 0.016 0.024
D 10.28 10.58 0.405 0.416
2
D2 3.30 0.130
E 9.70 10.10 0.382 0.398 0 2
E1 7.50 0.295
E4 8.50 0.335 4mm
E5 9.46 0.372
e 1.20 (BSC) 0.047 (BSC) EUROPEAN PROJECTION
H 11.48 11.88 0.452 0.468
H1 6.55 6.75 0.258 0.266
H2 7.15 0.281
H3 3.59 0.141
H4 3.26 0.128
N 8 8
K1 4.18 0.165 ISSUE DATE
L 1.60 2.10 0.063 0.083 20-02-2014
L1 0.70 0.028
L2 0.60 0.024
REVISION
L4 1.00 1.30 0.039 0.051
02

Figure1OutlinePG-HSOF-8-1

Final Data Sheet 11 Rev.2.0,2014-10-08

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IPT004N03L

RevisionHistory
IPT004N03L

Revision:2014-10-08,Rev.2.0
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2014-10-08 Release of final version

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Final Data Sheet 12 Rev.2.0,2014-10-08