ECE-305: Spring 2015

Material Properties: 2
Pierret, Semiconductor Device Fundamentals (SDF)
pp. 23-32

Professor Mark Lundstrom

Electrical and Computer Engineering
Purdue University, West Lafayette, IN USA
lundstro@purdue.edu

1/16/15
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Wednesday’s outline

1.  Silicon (atoms)

2.  Crystals (diamond and zinc blende)

3.  Miller indices (hkl) [hkl]

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 Today’s outline

1.  Quantization of energy levels

2.  Energy bands

3.  Electrons and holes

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but first…
I C = 100 µ A

VC = 2.0 V
1) What is VBE?
VB = 0.6 V
+
2.0 V
2) What is VCB?

VE = 0.0 V -
I B = 1 µA 3) What is VBC?
IE = ?

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 another question

How many stars are there in the observable universe?

a) 7 x 101

b) 7 x 109

c) 7 x 1017

d) 7 x 1022

e) 7 x 1078
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Today’s outline

1.  Quantization of energy levels

2.  Energy bands

3.  Electrons and holes

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 quantization of energy levels

Hydrogen atom

+
n =1
n=2

13.6 n=3
EH = − eV n = 1,2,3,...
n2
7

silicon energy levels

Si atom (At. no. 14)

4S0 E = E4S − E3P = hf

3P2
energy

3S2

2P6

2S2

1S2
8
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 silicon energy levels

Si atom (At. no. 14)

4S0

3P2
4 valence electrons
8 valence states
energy

3S2

2P6
“core
2S2 levels”

1S2
9
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silicon energy levels / energy bands

•  Only the valence states are of

interest to us.
N atoms ≈ 5 × 1022 cm -3

•  The 8 valence states give rise

to 8Natoms states per cm3 in
the solid.

•  But the interaction of the

4 nearest electron wavefunctions alters
neighbors the discrete energy levels of
the isolated Si atoms.

10
5.43 A Lundstrom ECE 305 S15
 bonding (cartoon)

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silicon energy levels à energy bands

Si atom (At. no. 14) Si crystal

4Natoms states

conduction “band”
energy

3P2

3S2 “forbidden gap”

T =0K valence “band” 4Natoms states

Fig. 2.5 in SDF

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 silicon energy levels à energy bands

Si atom (At. no. 14) Si crystal

conduction “band” 4Natoms states

• • • • • • • • •
energy

3P2
“forbidden gap”
3S2

• • • • • • • • •
T = 300 K valence “band” 4Natoms states

3
E = k T = 0.026 eV
2 B
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“energy band diagrams”

“intrinsic semiconductor”

n = p = ni cm -3
conduction “band”
• • • • • • • • • • • • • • • • • •
EC

“forbidden gap” EG

EV
• • • • • • • • • • • • • • • • • •
valence “band”
p = ni cm -3

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 energy band diagrams

Intrinsic Si EG (Si) = 1.1 eV

−3 EG ( GaAs ) = 1.4 eV
EC n = ni = 10 cm
10

k BT = 0.026 eV (T = 300 K )
EG = 1.1 eV n = p = ni
P ~ e− EG k BT

ni (Si) = 1× 1010 cm −3 (T = 300 K )

−3
EV p = ni = 10 cm
10

ni ( GaAs ) = 2 × 106 cm −3 (T = 300 K )

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another view

1) Electrons in the conduction band can move

2) Holes in the valence and can move
3) Electrons and holes can recombine
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 metals insulators and semiconductors

metals: conduct electricity (and heat) well.

insulators: don’t conduct electricity well

usually don’t conduct heat well

semiconductors: in-between, but

their properties can be controlled

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insulators metals semiconductors

empty states
EC
ETOP empty states

EC
empty states
EG ≈ 9 eV (SiO 2 )
EG ≈ 1.1 eV (Si)
k BT ≈ 0.026 eV (300K) EV
filled states
EV
E BOT filled states
filled states

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 Week 2: carrier properties

F (t ) F = m0 a
υ (t ) x (t )

19
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Week 2: effective mass

F = m0 a → mn* a

“effective mass” for electrons

Si: mn* = 1.18m0

GaAs: mn = 0.066 m0
*

“crystal potential”

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 effective mass of holes

F = m0 a → m*p a

effective mass for holes

Si: m*p = 0.81m0

GaAs: m*p = 0.52 m0

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21

energy and momentum

F (t ) F = m0 a
υ (t ) x (t )

1 p2
E= m0υ 2 =
2 2m0

p = m0υ
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 energy and “crystal momentum”

E
2 2
E=
p
→ E = EC +
p “band structure”
2m0 2mn*

EC

p = !k
EV

p2 p2
E= → E = EV −
2m0 2m *p

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next up: doping

Phosphorus or Arsenic Gallium or boron

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