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Silicon Schottky Diode: BAS 40-07W
Silicon Schottky Diode: BAS 40-07W
Silicon Schottky Diode: BAS 40-07W
2
1 VPS05605
4 1
3 2
EHA07008
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage VR 40 V
Forward current IF 120 mA
Surge forward current, t ≤ 10ms IFSM 200
Total power dissipation, TS ≤ 81°C Ptot 250 mW
Junction temperature Tj 150 °C
Operating temperature range Top -55 ... 150
Storage temperature Tstg -55 ... 150
Maximum Ratings
Junction - ambient 1) RthJA ≤ 345 K/W
Junction - soldering point RthJS ≤ 275
1 Oct-07-1999
BAS 40-07W
AC characteristics
Diode capacitance CT - 4 5 pF
VR = 0 V, f = 1 MHz
Charge carrier life time τ - - 100 ps
IF = 25 mA
Differential forward resistance RF - 10 - Ω
IF = 10 mA, f = 10 kHz
2 Oct-07-1999
BAS 40-07W
ΙF ΙR
mA µA
TA = 150 C
10 2
10 1
10 1
TA = -40 ˚C
10 0 25 ˚C 85 C
85 ˚C
150 ˚C 10 0
10 -1
10 -1
25 C
10-2 10 -2
0.0 0.5 1.0 V 1.5 0 10 20 30 V 40
VF VR
10 2
3
2
10 1
0 10 3
0 10 20 V 30 0.1 1 10 mA 100
VR ΙF
3 Oct-07-1999
BAS 40-07W
160
140
120
TS
100
TA
80
60
40
20
0
0 50 100 ˚C 150
TA ; TS
4 Oct-07-1999
This datasheet has been download from:
www.datasheetcatalog.com