-100mA / -50V Digital transistors

(with built-in resistors)

DTA123EM / DTA123EE / DTA123EUA / DTA123EKA

zApplications
Inverter, Interface, Driver

zFeatures
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.
(see equivalent circuit)
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.

zStructure
PNP epitaxial planar silicon transistor (Resistor built-in type)

zDimensions (Unit : mm)

DTA123EM DTA123EE 1.6 0.7

1.2 0.3 0.55
0.32
0.2

(3)
(3)
0.8

1.6
0.8
1.2

(1)(2)
(2) (1)
0.22 0.1Min.
0.2

0.13 0.2 0.2

0.4 0.4 0.5 0.15
(1) IN 0.5 0.5 (1) GND
0.8 (2) GND
1.0 (2) IN
ROHM : VMT3 (3) OUT ROHM : EMT3 (3) OUT
Abbreviated symbol : 12 Abbreviated symbol : 12

DTA123EUA DTA123EKA 2.9 1.1

2.0 0.9
0.4 0.8
0.3 0.2 0.7

(3)
(3)
1.25

2.1

2.8
1.6

(2) (1) (1) GND (2) (1) (1) GND

0.1Min.

(2) IN
0.3Min.

0.65 0.65 0.95 0.95 (2) IN

(3) OUT 0.15
1.3 0.15 (3) OUT
ROHM : UMT3 1.9
EIAJ : SC-70 Each lead has same dimensions ROHM : SMT3 Each lead has same dimensions
EIAJ : SC-59
Abbreviated symbol : 12 Abbreviated symbol : 12

zPackaging specifications zEquivalent circuit

Package VMT3 EMT3 UMT3 SMT3
Packaging type Taping Taping Taping Taping R1 OUT
IN
Code T2L TL T106 T146
R2
Basic ordering
8000 3000 3000 3000
Part No. unit (pieces) GND(+)
DTA123EM − − −
DTA123EE − − −
IN OUT
DTA123EUA − − −
DTA123EKA − − − GND(+)

R1=R2=2.2kΩ

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1/2 2009.03 - Rev.B
c 2009 ROHM Co., Ltd. All rights reserved.
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DTA123EM / DTA123EE / DTA123EUA / DTA123EKA Data Sheet

zAbsolute maximum ratings (Ta=25°C)

Limits
Parameter Symbol Unit
DTA123EM DTA123EE DTA123EUA DTA123EKA
Supply voltage VCC −50 V
Input voltage VIN −12 to +10 V
IO −100
Output current mA
IC(Max.) −100
Power dissipation PD 150 200 mW
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
VI(off) − − −0.5 VCC=−5V, IO=−100µA
Input voltage V
VI(on) −3 − − VO=−0.3V, IO=−20mA
Output voltage VO(on) − −0.1 −0.3 V IO/II=−10mA/−0.5mA
Input current II − − −3.8 mA VI=−5V
Output current IO(off) − − −0.5 µA VCC=−50V, VI=0V
DC current gain GI 20 − − − VO=−5V, IO=−20mA
Input resistance R1 1.54 2.2 2.86 kΩ −
Resistance ratio R2/R1 0.8 1 1.2 − −
Transition frequency fT ∗ − 250 − MHz VCE=−10V, IE=5mA, f=100MHz
∗ Characteristics of built-in transistor

zElectrical characteristic curves

100 10m 1k
VO=−0.3V VCC=−5V VO=−5V
50 5m
500
2m
OUTPUT CURRENT : IO (A)
INPUT VOLTAGE : VI(on) (V)

20 1m 200
DC CURRENT GAIN : GI

10 500µ Ta=100°C 100

Ta=−40°C 25°C
5 25°C 200µ 50
−40°C Ta=100°C
100°C 100µ 25°C
2 50µ 20 −40°C

1 20µ 10
500m 10µ 5
5µ
200m 2
2µ
100m 1µ 1
−100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m 0 −0.5 −1.0 −1.5 −2.0 −2.5 −3.0 −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m

OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI(off) (V) OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current Fig.2 Output current vs. input voltage Fig.3 DC current gain vs. output
(ON characteristics) (OFF characteristics) current

1
IO/II=20
500m
OUTPUT VOLTAGE : VO(on) (V)

200m
100m
Ta=100°C
50m
25°C
20m −40°C

10m
5m

2m
1m
−100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m

OUTPUT CURRENT : IO (A)

Fig.4 Output voltage vs. output
current

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c 2009 ROHM Co., Ltd. All rights reserved.
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