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EEE 1218 Sessional On Analog Electronics: Date: 23-05-202 Student's Name: Afiat Khan Tahsin Roll: 1907047
EEE 1218 Sessional On Analog Electronics: Date: 23-05-202 Student's Name: Afiat Khan Tahsin Roll: 1907047
1. OBJECTIVES
The main objective(s) of the experiment is/are to
i. Know the operation and application of basic instruments used electronic engineering.
ii. Measure and analyse the volt-ampere (V-I) characteristics of a semiconductor diode.
3. EXPERIMETAL RESULTS
3.DISCUSSION
Through this experiment, we are acquainted with electronic measuring instrument and
devices and we derive the V-I characteristics of a semiconductor diode via the
experimental results.
In the forward bias condition of the diode, we set the value to 0 and increase the value
very slowly until 0.6V. we don’t see any difference. After 0.6 V, the current increases
rapidly. We take the data and plot on the graph.
In the reverse bias condition, there is no current flow in the circuit.
In the reverse bias circuit setup time, we have to turn off the switch of the battery at
first, then we can change the wire or reverse the diode and connect with the wire
because sudden change may destroy the diode. To avoid short circuit in the forward
bias condition we also use a resistor. Because huge current flow may destroy the
diode.
5. LEARNING TEST
A. What are the forward and reverse characteristics of a semiconducting PN junction?
Ans: Forward bias allows current flow through the diode but reverse bias condition does allow
current flow.
B. What is knee voltage? What are the values of knee voltage for Si and Ge diodes?
Ans: It is the forward voltage which starts conducting rapidly through the diode. Knee voltage
for Si and Ge diodes are 0.7 V and 0.3 V.
C. Write down the significance of each parameter in the specification sheet of 1N4007 diode.
Ans: 1N means one junction, 400 is serial number of 7 ampere family and 7 means current rating of
7 ampere.