V SWETHA 19BEC1340 – 02/08/2021

LAB 01
CHARACTERISTICS OF NMOS TRANSISTOR

OBJECTIVE: To design and analyze the drain and transfer characteristics of NMOS
transistors.
TOOLS / RESOURCES REQUIRED : LTSpice
PROCEDURE:
1. Construct the circuit in LTspice as per the schematic design
2. Use a 4 terminal mos device in all cases
3. Assign experimental values to electrical components present in the
circuit
4. Define the MOS model using the spice directive.
5. Set simulation to DC sweep (linear) for obtaining transfer characteristics.
6. Verify whether the connections are proper
7. Start simulation and obtain results by analyzing output graphs using
inbuilt cursors.
8. Make necessary changes in circuit for obtaining drain characteristics
CIRCUIT:

OUTPUT: TRANSFER CHARACTERISTICS

V SWETHA 19BEC1340 – 02/08/2021

DRAIN CHARACTERISTICS
V SWETHA 19BEC1340 – 02/08/2021

OBSERVATIONS:

Transconductance gm =

VGT = Vgs – Vth

1. For Vth = 0.6

Gm = 2(4+2.5)/2 / (1.6+1.4)/2 - 0.6
= 2*3.33 / 0.9
= 0.0074

2. For Vth = 0.4

Gm = 2(4+5.7)/2 / (1.6+1.4)/2 - 0.4
= 2*4.85 / 1.1
= 0.0074

DRAIN/OUTPUT CHARACTERISTICS

For ƛ = 0.025
r0 = 1 * 1000000 / (0.025 * (656+659/2))

INFERENCE: NMOS and PMOS transfer and drain characteristics were successfully implemented.