AOD2922

100V N-Channel AlphaMOS

General Description Product Summary

• Latest Trench Power AlphaMOS (αMOS MV) technology VDS 100V

• Very Low RDS(ON) ID (at VGS=10V) 7A
• Low Gate Charge RDS(ON) (at VGS=10V) < 140mΩ
• Optimized for fast-switching applications
RDS(ON) (at VGS=4.5V) < 176mΩ
• RoHS and Halogen-Free Compliant

Application 100% UIS Tested

100% Rg Tested
• Synchronus Rectification in DC/DC and AC/DC Converters
• Isolated DC/DC Converters in Telecom and Industrial

TO-252
DPAK
D
Top View Bottom View

D
D

S G
G
S
G S

Orderable Part Number Package Type Form Minimum Order Quantity

AOD2922 TO-252 Tape & Reel 2500

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 7
ID
Current TC=100°C 5 A
C
Pulsed Drain Current IDM 10
Continuous Drain TA=25°C 3.5
IDSM A
Current TA=70°C 3
C
Avalanche Current IAS 3 A
Avalanche energy L=0.1mH C EAS 0.5 mJ
VDS Spike 10us VSPIKE 120 V
TC=25°C 17
B
PD W
Power Dissipation TC=100°C 8.5
TA=25°C 5.0
PDSM W
Power Dissipation A TA=70°C 3.2
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 20 25 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 40 50 °C/W
Maximum Junction-to-Case Steady-State RθJC 7.3 8.8 °C/W

Rev.1.0: October 2013 www.aosmd.com Page 1 of 6

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 100 V
VDS=100V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.7 2.2 2.7 V
VGS=10V, ID=5A 117 140
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 224 270
VGS=4.5V, ID=3A 140 176 mΩ
gFS Forward Transconductance VDS=5V, ID=5A 8.5 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.8 1.1 V
IS Maximum Body-Diode Continuous Current 7 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 250 310 pF
Coss Output Capacitance VGS=0V, VDS=50V, f=1MHz 19 30 pF
Crss Reverse Transfer Capacitance 2.5 8 pF
Rg Gate resistance f=1MHz 5 10.5 16 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 3.8 10 nC
Qg(4.5V) Total Gate Charge 1.8 6 nC
VGS=10V, VDS=50V, ID=5A
Qgs Gate Source Charge 0.8 nC
Qgd Gate Drain Charge 0.8 nC
tD(on) Turn-On DelayTime 5 ns
tr Turn-On Rise Time VGS=10V, VDS=50V, RL=10Ω, 3 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 19 ns
tf Turn-Off Fall Time 5 ns
trr Body Diode Reverse Recovery Time IF=5A, dI/dt=500A/µs 16 ns
Qrr Body Diode Reverse Recovery Charge IF=5A, dI/dt=500A/µs 52 nC

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev.1.0: October 2013 www.aosmd.com Page 2 of 6

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

18 18
10V VDS=5V
15 15
5V
12 12
4.5V
ID (A)

ID(A)
9 9
4V

6 6
3.5V
3 3 125°C
VGS=3V 25°C
0 0
0 1 2 3 4 5 1 2 3 4 5 6

VDS (Volts) VGS(Volts)

Figure 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

240 2.8
2.6
Normalized On-Resistance
200 2.4
VGS=10V
VGS=4.5V 2.2 ID=5A
Ω)
RDS(ON) (mΩ

160 2
1.8
120 1.6
1.4
VGS=10V VGS=4.5V
80 1.2 ID=3A
1

40 0.8
0 2 4 6 8 10 0 25 50 75 100 125 150 175 200
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature
Voltage (Note E) (Note E)

400 1.0E+02
ID=5A
350 1.0E+01

300 1.0E+00
125°C
Ω)
RDS(ON) (mΩ

IS (A)

250 1.0E-01

200 1.0E-02 125°C

150 1.0E-03 25°C

100 1.0E-04
25°C

50 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

Rev.1.0: October 2013 www.aosmd.com Page 3 of 6

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 300
VDS=50V
ID=5A
250
8
Ciss

Capacitance (pF)
200
VGS (Volts)

6
150
4
100 Coss

2
50
Crss
0 0
0 1 2 3 4 5 0 20 40 60 80 100
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 200
TJ(Max)=175°C
10µs TC=25°C
10.0 10µs 150
Power (W)

RDS(ON)
ID (Amps)

100µs
limited
1.0 100
1ms
10ms
0.1 DC 50
TJ(Max)=175°C
TC=25°C
0.0 0
0.01 0.1 1 10 100 1000 0.0001 0.001 0.01 0.1 1 10 100
VDS (Volts)
Pulse Width (s)
VGS> or equal to 4.5V
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe
Case (Note F)
Operating Area (Note F)

10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC
Thermal Resistance

RθJC=8.8°C/W
1

0.1 PD
Single Pulse

Ton
T
0.01
1E-05 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev.1.0: October 2013 www.aosmd.com Page 4 of 6

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

20 10

8
15
Power Dissipation (W)

Current rating ID(A)

6
10
4

5
2

0 0
0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
°C)
TCASE (° °C)
TCASE (°
Figure 12: Power De-rating (Note F) Figure 13: Current De-rating (Note F)

10000
TJ(Max)=150°C
TA=25°C

1000
Power (W)

100

10

1
1E-05 0.001 0.1 10 1000

Pulse Width (s)

Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)

10
Zθ JA Normalized Transient

D=Ton/T In descending order

TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Thermal Resistance

1 RθJA=50°C/W

0.1

Single Pulse PD
0.01
Ton
T
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)

Rev.1.0: October 2013 www.aosmd.com Page 5 of 6

 Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs td(on) tr td(off) tf

ton toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

Rev.1.0: October 2013 www.aosmd.com Page 6 of 6