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MDD Microdiode Electronics SS310B - C14281 - 2
MDD Microdiode Electronics SS310B - C14281 - 2
94)
0.07 (1. 0) 0.130(3.30)
0.18 (4.7 )
0.160(4.06)
0.012(0.305)
0.006(0.152)
0.096(2.44)
0.084(2.13)
0.060(1.52)
0.030(0.76) 0.008(0.203)MAX.
0.220(5.59)
0.200(5.08)
Parameter SS 3 SS 4 SS 5 SS 6 SS 8 SS 10 SS 150
SYMBOLS
MDD MDD MDD MDD MDD MDD MDD MDD MDD UNITS
Marking Code SS 3 SS 4 SS 5 SS 6 SS 8 SS 10 SS 150
Maximum repetitive peak reverse voltage VR M 20 30 40 50 60 80 100 150 200 V
Maximum RMS voltage VRMS 14 21 28 35 42 56 70 105 140 V
Maximum DC blocking voltage VDC 20 30 40 50 60 80 100 150 200 V
Maximum average forward rectified current I(AV)
at TL(see fig.1) .0 A
Peak forward surge current
8.3ms single half sine-wave IFSM A
superimposed onrated load (JEDEC Method)
Maximum instantaneous forward voltage at .0A VF 0.55 0.70 0.85 0.95 V
Maximum DC reverse current TA=25 0. 0.
IR mA
at rated DCblocking voltage TA=125 .0
Typical junction capacitance (NOTE 1) CJ pF
Typical thermal resistance (NOTE 2) R JA .0 W
Operating junction temperature range TJ -55 to +1 -55 to +150
Storage temperature range TSTG -55 to +150