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Chapter 2 - Bipolar Junction Transistors
Chapter 2 - Bipolar Junction Transistors
Chapter 2 - Bipolar Junction Transistors
ELECTRONIC PRINCIPLES
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I. BJT STRUCTURE
Structure
NPN PNP
Symbols
2
II. OPERATION
DC Biasing
VCC VCC
VBB
VBB
DC Biasing
DC Biasing
NPN PNP
DC Biasing
NPN PNP
Forward bias of a BJT
(Common Emitter configuration)
6
II. OPERATION
DC Biasing
B
Vcc
A
B
Vcc
A
B
Vcc
A
B
Vcc
A
Q2
ICQ IBQ
Q1
IBmin
VCESat VCEQ VCC
VB = VBE = 0,7V
VC = VCE = 6,83V
IC
60,6mA
Q 0,19 mA
28,8 mA
VCE
0 10,5V 20V
20
II. OPERATION - DC Biasing
2. Emitter-stabilized Bias Circuit
I E = ( + 1) I B
β >> 1
A
➔ IE IC
Applying KVL in loop A:
VCC = I B RB + VBE + I E RE VCC = I B RB + VBE + ( + 1) I B RE
VCC − VBE
I BQ =
RB + ( + 1 )RE
(Common Emitter configuration) 22
II. OPERATION - DC Biasing
2. Emitter-stabilized Bias Circuit
IC = βIB
B β >> 1
➔ IE IC
430k
2k IB = (20-0.7)/(430 + 51*1) = 0,04 mA
IC = 50*0,04= 2 mA
β = 50
1k
ICsat = 20/(2 + 1)= 6,67 mA
➔ ICQ = 2 mA
➔ VCEQ = 20 – 2*(2 +1) = 14 V
➔ Q = (14V; 2 mA)
27
II. OPERATION - DC Biasing
2. Emitter-stabilized Bias Circuit
+20V
DCLL: IC = -VCE/(2 +1) + 20/(2 +1)
= - 0,33VCE + 6,67
430k
2k
IC
ICsat 6,67mA
β = 50
1k
ICQ Q IB = 0,04 mA
2 mA
VCE
0 14V 20V
VCEQ 28
II. OPERATION - DC Biasing
2. Emitter-stabilized Bias Circuit
Find Q(VCEQ;ICQ), DCLL? VBE = 0,7 (V).
VCC+20V
= 12 V
RC = 1kΩ
2k
RB = 330kΩ
430k
ββ ==50120
RE = 0,22kΩ
1k
29
II. OPERATION - DC Biasing
2. Emitter-stabilized Bias Circuit
Find Q(VCEQ;ICQ), DCLL? VBE = 0,7 (V).
1 kΩ IB = (5-0.7)/(82 + 121*0,22)
= 0,04 mA
β = 120
82kΩ 12 V IC = 120*0,04= 4,8 mA
5V RE 0,22 kΩ ICsat = 12/(1 + 0,22)= 9,8 mA
➔ ICQ = 4,8 mA
➔ VCEQ = 12 – 4,8*(1 +0,22) = 6,14 V
RTH
VCC
RB 2
VTH = VCC VTH RE
RB1 + RB 2
RTH
VCC
B
VTH RE
RTH
VCC
VTH RE
IC = βIB
RTH
VCC
B
VTH RE
VCC = I E RE + VCE + I C RC
VCEQ = VCC − I CQ ( RC + RE )
(Common Emitter configuration)
35
II. OPERATION - DC Biasing
3. Voltage-divider Bias - Exact Analysis
Thévenin equivalent network
RC
RTH
VCC
B
VTH RE
A
VCC = I E RE + VCE + I C RC
1 VCC
IC = VCE +
( RC + RE ) ( RC + RE ) DCLL
RC
10k
39k RTH
VCC
IC
+
VCE β = 140 VTH RE
-
3.9k
1.5k
26mV
re =
I CQ
41
III. BJT Transistor Modeling
1. Hybrid equivalent model.
hie = b re
hie = b re
Zi = RB P hie
Z0 = RC
with CE (bypassed),
without CE (unbypassed),
without CE (unbypassed),
RC
RB
RE
RC
RB
RE
The cutoff, saturation, and quiescent (Q) points on the load line
59
Switching operation: BJT as a switch
60
Switching operation: BJT as a switch
VCC
•VCE(sat) = 0(V) ICsat =
RC
Saturation
ON
Cutoff
OFF
VCE = VCC
IC = 0 (mA)
61
Switching operation: BJT as a switch
•VBB ≤ VCC.
ICsat
IB
ICsat ICsat
IB = k = (2 5)
or
IB should be significantly greater than IB(min)
to ensure that the transistor is saturated.
Thus K = 2➔5 is a hard/deep saturation factor
62
Switching operation: BJT as a switch
Vin = 5 V, β = 300
Find RB So that BJT works in saturation
63
Switching operation: BJT as a switch
64
Switching operation: BJT as a switch
65
Switching operation: BJT as a switch
66
Switching operation: BJT as a switch
+ VCC
67
Switching operation: BJT as a switch
T t
+12V
+ +
RC - T - t
V0
1. Vin RB
VCC
Q
0 1 0 1
t
+12V
RC2 + +
RC1 V0
- T - t
RB2
2. RB1 Q2 VCC
Vin
Q1 1 0 1 0
t
68
Switching operation: BJT as a switch
T t
+12V
RC + +
- T - t
3. Vin RB
Q
V0
< VCC
1 0 1 0
RE t
69
Switching operation: BJT as a switch
VCC
D1 R6
LED 1K5
Q2
A1015
R5
R 1K Vo
2K2
Vin
Q1
C1815 C4
C 103
101
t i c =IC t
1 1
u c ( t ) = i c dt = I C dt
C0 = const C
0
IC
u c ( t ) = t = linear _( y = ax)
C
70