HCMC University of Technology and Education

FACULTY FOR HIGH QUALITY TRAINING

ELECTRONIC PRINCIPLES
www.hcmute.edu.vn
 I. Introduction

FET: Field-Effect Transistor

JFET: Junction Field-Effect Transistor
MOSFET: Metal Oxide Semiconductor
Field-Effect Transistor
IGBT: Insulated Gate Bipolar Transistor

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 I. Introduction
 The term field-effect relates to the depletion region
formed in the channel of an FET as a result of a voltage
applied on one of its terminals (gate)
 It is a voltage-controlled device, where the voltage
between two of the terminals (gate and source)
controls the current through the device
 FETs are the preferred device in low-voltage switching
applications because they are generally faster than
BJTs when turned on and off. The IGBT is generally
used in high-voltage switching applications.
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 II. JFET
Basic Structure and symbol

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 II. JFET
Basic Structure and symbol

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 II. JFET
Basic Structure and symbol

Current-controlled device Voltage-controlled device

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 II. JFET
Basic Structure and symbol

JFET versus BJT.

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 II. JFET
Basic Structure and symbol

ID

IG = 0 IS

IG = 0, ID = IS

Voltage-controlled device 8
 II. JFET
Basic operation

Operating
with a
reverse-
biased pn
junction to
control
current in a
channel
A biased n-channel JFET
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 II. JFET
Basic operation

JFET with VGS = 0 V and a variable VDS (VDD)

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 II. JFET
Basic operation

JFET with VGS = 0 V and a variable VDS (VDD)

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 II. JFET
Basic operation

The drain characteristic curve of a JFET for

VGS 0 showing pinch-off voltage
JFET with VGS = 0 V and a variable VDS (VDD)
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 II. JFET
Basic operation

Shockley’s equation:

JFET with VGS < 0 V 13

 II. JFET
Basic operation
JFET with VGS < 0 V
When VGS =VP, ID = 0 mA
When VGS = 0 V, ID = IDSS

Shockley’s equation:

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III. JFET BIASING
1. Self-Bias

JFET with VGS = 0 V 15

III. JFET BIASING
2. Fixed-Bias configuration

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III. JFET BIASING
3. Voltage-Divider Bias

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