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Borophene: Current Status, Challenges and Opportunities: Chuang Hou, Guoan Tai, Zenghui Wu, and Jinqian Hao
Borophene: Current Status, Challenges and Opportunities: Chuang Hou, Guoan Tai, Zenghui Wu, and Jinqian Hao
Borophene: Current Status, Challenges and Opportunities: Chuang Hou, Guoan Tai, Zenghui Wu, and Jinqian Hao
ChemPlusChem doi.org/10.1002/cplu.202000550
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3 Borophene: Current Status, Challenges and Opportunities
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5 Chuang Hou, Guoan Tai,* Zenghui Wu, and Jinqian Hao[a]
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1 Borophenes (2D boron sheets) have triggered a surge of tigation of their novel and fascinating physical properties. This
2 interest both theoretically and experimentally because of its report provides a brief review on theoretical and experimental
3 distinct structural, optical and electronic properties for exten- progress in borophene research. Some typical structures and
4 sive potential applications. Although theoretical efforts have properties of borophenes have been reviewed. The focus is laid
5 guided the research directions of borophene, only few synthetic on summarizing the experimental synthesis of borophene in
6 borophene sheets have been demonstrated experimentally. recent years, and on showing some ultrastable and semi-
7 Borophene sheets have been successfully synthesized exper- conducting borophenes which have been applied in electronic
8 imentally on metal substrates until 2015. Afterwards, more information devices. Finally, the future challenges and oppor-
9 efforts were put on the controlled synthesis of crystalline and tunities regarding experimental realization and practical appli-
10 semiconducting borophene sheets as well as on the inves- cations of borophenes are presented.
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1. Introduction planar boron clusters with multicenter bonding in the
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clusters,[19–21] which are viewed as the precursors to form the
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Since the boom of graphene,[1,2] other two-dimensional (2D) borophene. Subsequently, theoretical calculations show that
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materials such as black phosphorus (BP),[3] hexagonal boron the intermixing of hollow hexagons (HHs) and triangular lattice
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nitride (BN)[4] and transition metal dichalcogenides (TMDs),[5,6] in borophene,[22] such as α, β12, δ6 and χ3 boron sheets,[23] can
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have drawn dramatically increasing attention in recent years result in its structural planarity and higher stability than the
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owing to their novel optical, magnetic, electronic and thermal only triangular lattice. Excitingly, the hollow hexagons existing
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properties,[1–6] which are different from their bulk counterparts. in triangular lattice also renders significant structure diversity of
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All kinds of atomic-thick and crystalline materials have been borophene. With the deepening of theoretical research, a plenty
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already prepared in quantities experimentally. Thus, it promotes of unique physical and chemical properties in borophene have
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great potential applications of the 2D materials in electronic been reported, including highly anisotropic electronic structure,
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devices, energy storage and utilization. However, monoelemen- ultrahigh thermal conductance, mechanical compliance, pho-
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tal 2D materials represented by graphene have only a small non-mediated superconductivity and optical
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number in these families. Both theoretical calculations and transparency.[11–13,24–30] These properties make borophene be-
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experiments show that the 2D materials, such as silicene,[7] come an attractive material with potential applications in
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phosphorene,[8] arsenene,[9] and germanene[10] could not form memory, superconducting devices and flexible electronics for
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planar structure like graphene due to their out-of-plane quantum information technology.[29] Benefiting from extensive
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buckling with varying degrees. Whether there is a planar 2D theoretical and computational studies, our group first reported
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structure like graphene has always been an interest to be the successful preparation of 2D γ-boron monolayer on the
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expected. Boron (B), one of carbon’s nearest neighbors in the copper (Cu) surface by chemical deposition vapor (CVD).[24]
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periodic table of elements, is still among the most mysterious Almost at the same time, two independent groups grew 2D
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elements due to the severe electron-deficient bonding with boron sheets with different kinds on silver (Ag) in ultrahigh
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diversified chemical bonds, which ranges from the classical vacuum by molecular beam epitaxy (MBE) method.[29,30] After
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covalent two-center two electron (2c–2e) bonds and three- that, borophene sheets with different phases have been
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center two electron (3c–2e) bonds to multicenter bonds.[11–13] experimentally grown on the extensive substrates of Cu
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Since the end of the last century, boron nanostructures had (111),[31] Au (111)[32] and Al (111).[33] Recently, quasicubic boron
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been studied, which include zero-dimensional (0D) clusters and sheet with a direct bandgap,[34] crystalline semiconducting
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one dimensional (1D) nanotubes. 2D boron sheets, as the most boron quantum dots (BQDs),[35] and hydrogenated borophenes
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basic units for constructing the boron nanostructures, had (α’-4H-borophene)[36] have been successfully prepared in our
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attracted great attention in the past two decades.[14–36] group, which promote substantial potential applications of the
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Especially, Boustani, Ismail-Beigi and Yakobson et al. have boron nanostructures in next-generation nanoelectronics.
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systematically investigated stable 2D boron sheets, which guide However, the experimental realization of borophene is still
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the experimental growth of borophene.[14–16] After the discovery in its infancy, and more efforts on experiments and theories are
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of the planar hexagonal B36 cluster by the combination of expected to explore the structures and properties as well as
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theory and experiment, borophene, 2D boron monolayer, was growth mechanism of borophene. In this minireview, we first
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proposed by Wang’s group.[17,18] The group also reported the 2D introduce the structure and physical as well as chemical
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properties of borophene via theoretical prediction. Then, we
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mainly focus on the experimental synthesis progress of
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[a] C. Hou, Prof. G. Tai, Z. Wu, J. Hao borophene in recent years. Different from previous reviews, we
51 The State Key Laboratory of Mechanics and Control of Mechanical hope to remove set thinking and blaze new trails about the
52 Structures
Laboratory of Intelligent Nano Materials and Devices of Ministry of borophene field experimentally, guiding a feasible way to
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Education synthesize borophenes. Finally, we summarize the potential ap-
54 College of Aerospace Engineering plications of borophene. Theoretical and experimental pro-
55 Nanjing University of Aeronautics and Astronautics
Nanjing 210016 (P. R. China) gresses of borophene have been chronologically illustrated in
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E-mail: taiguoan@nuaa.edu.cn Figure 1.
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18 Figure 1. Major breakthroughs in boron nanostructures. Theoretical (top) and experimental (bottom) investigations are indicated, respectively.
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2. Structure and properties of borophene and can be expanded to obtain a stable two-dimensional boron
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structure: α-sheet (Figure 2b), but it is a high energy isomer.[11,12]
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2.1. Structure of borophene Afterwards, many other B80 buckyball structures were predicted
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to be much lower in energy.[37–39] However, the discovery of B80
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The successful discovery of graphene has ignited scientists to also promotes the unprecedented structural diversity of 2D
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search for other monoelemental 2D materials.[1] Boron, which is boron sheets. After that, numerous 2D boron sheets with
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similar to carbon in respect of physical properties, has been buckled and unbuckled structure have been predicted by ab
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extensively explored in recent year. Boustani et al. proposed initio calculations and the monolayers include β-sheet, γ-sheet,
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that bucked triangular motifs could form the most stable boron g1/8- and g2/15-sheet and so on.[23,40] The structures, which are
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structure (Figure 2a),[14] which led to the extensive studies of 2D composed of hexagonal holes and triangular patterns within
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boron sheets. As the theories progress, a novel 2D boron sheet, the triangular sheet, possess greater cohesive energies than
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which is different from the buckled triangular motif but more those without hexagonal holes. A global density parameter, η,
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stable, was observed. In 2007, Yakobson et al. reported that the is employed to describe their area densities and stability, which
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B80 buckyball composed of 20 hexagons and 12 pentagons is is defined as n/N, where n the number of the hexagonal holes
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analogous to the well-known C60 fullerene in shape and in a supercell consisted of N pristine triangular lattices.[11,15]
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symmetry.[37] Excitingly, the B80 buckyball is a beautiful structure
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39 Chuang Hou received his Bachelor’s degree Zenghui Wu received his Bachelor’s degree
40 from North University of China in 2018. He is from Wuhan University in 2014. Afterwards, he
currently a Ph.D. candidate in Prof. Guoan received his Master’s degree from Nanjing
41 Tai’s group. His research focuses on the syn- University of Aeronautics and Astronautics in
42 thesis and device application of borophene. 2019, and then joined Prof. Guoan Tai’s group
43 as a Ph.D. candidate in the same year. His
44 research interests focus on the epitaxial
45 growth and device applications of two-dimen-
sional materials.
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47 Guoan Tai received his Ph.D. from Nanjing Jinqian Hao received his Bachelor’s degree
48 University of Aeronautics and Astronautics, from Henan University of Technology in 2018.
49 and was a Postdoctoral Fellow in Department He is currently a Master’s candidate in Prof.
50 of Applied Physics at The Hong Kong Poly- Guoan Tai’s group. His research interests focus
51 technic University. He is currently a full on synthesis and device applications of boron
professor in College of Aerospace Engineering nanostructures.
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at Nanjing University of Aeronautics and
53 Astronautics. His research interests focus on
54 the photodetectors and sensors based on 2D
55 materials, energy storage and conversion
56 devices.
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and zigzag directions, respectively. Thus, it was found that produce the diboron dioxide (B2O2) vapor. Temperature of T1
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borophene possessed a near extraordinary thermal conductivity was set to 1100 °C. The large-area boron monolayer was
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as graphene. Additionally, Yakobson, et al. have systematically prepared on a scalable copper (Cu) foil at 1000 °C (T2) for 1 h, as
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investigated superconducting property of borophene using shown in Figure 3d,e.
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first-principles calculations.[50] Remarkably, they found that all The fast Fourier transform (FFT) and high-resolution trans-
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types of stable borophenes showed superconductivity. How- mission electron microscopy (HRTEM) images clearly revealed
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ever, the experimental investigation on the desirable properties that the structure of the monolayer was consisted of icosahe-
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of borophenes are still rare. More effects on experimental dral B12 units and B2 dumbbells. It belongs to orthorhombic γ-
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realization to enrich and verify the properties of borophene are B28 structure with a unit cell of 28 atoms, where a = 5.054, b =
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urgently expected. 5.620 and c = 6.987 Å, and a space group of Pnnm. Figure 3c
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gives a clear view in bc projection to observe the polyhedral
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structure of the basic unit cell of the monolayer. The thickness
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3. Experimental realization of borophenes of the boron monolayer tested by atomic force microscopy
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(AFM) is close to 0.80 nm (Figure 3f) which is close to the a-axis
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Although the possible experimental synthesis of borophene on height of the γ-B28 model (a = 0.5054 nm) (side view of Fig-
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various metal substrates was confirmed theoretically, only a few ure 3c), which suggests that the prepared sheet is monolayer.
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types of 2D boron sheets have been very recently prepared The binding energy of the B1s spectrum is fitted to a single
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experimentally. The boron monolayer was firstly prepared by peak located at 187.6 eV, which is attributed to the B B bond
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our group via a home-made two-zone chemical deposition (Figure 3g). Moreover, the optical band gap measured by UV-vis
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vapor (CVD).[24] The growth procedure of the boron monolayer absorption spectroscopy is around 2.25 eV (Figure 3h) which
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is schematically demonstrated (Figure 3a–c). During the experi- was near to the theoretical value (2.07 eV), and strong photo-
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ment, the temperatures of the source (T1) and substrate zone luminescence was observed (Figure 3i), which reveals that the
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(T2) were controlled separately to obtain the precise growth monolayer is a promising semiconductor.
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rate. The mixture of B and B2O3 powders was selected as a During the same period, Guisinger et al. and Feng et al. in
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boron source and hydrogen (H2) gas was as a carrier gas to two independent groups fabricated different kinds of boro-
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53 Figure 3. Experimental realization of 2D γ-B28 monolayer grown on Cu. a) Schematic representation of the 2D γ-B28 monolayer using a home-made two-zone
54 CVD. b) Top and side view of the 2D boron structure model. Unit cell vectors are shown. c) The basic polyhedral structure of the sheet shown in bc projection.
55 d) Optical image of the boron monolayer on the Cu foil. A photograph of the monolayer on the Cu foil is shown in the right top corner. e) Optical image of
the monolayer transferred onto a SiO2/Si substrate. f) A typical AFM image of the monolayer obtained on the SiO2/Si substrate. g) XPS analysis of the B1s peak
56 of the monolayer. h, i) UV-Vis and PL spectra of the γ-B28 monolayer. Reproduced from reference [24] with permission from Wiley-VCH.
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phene structures in ultrahigh vacuum.[29,30] Single-crystal and was labeled as S1 phase (Figure 4e). As the temperature was
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clean Ag (111) surface was used as the growth substrate, and raised to 680 K, another S2 phase which was composed of
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borophene was deposited from a high-purity boron source with parallel chains could be obtained (Figure 4f). Moreover, the S1
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a highly controlled condition using the molecular beam epitaxy phase could also be transformed into the S2 at 650 K (Fig-
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(MBE) technique. Guisinger et al. observed three types of phase, ure 4g). STM results further confirmed that the borophenes
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homogeneous phase, stripped phase and nanoribbons, at were consistent with β12 and χ3 sheets predicted previously by
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substrate temperature of 550 °C (Figure 4a).[29] Large-scale Zhang et al.[40] Similarly, the two boron sheets have the metallic
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scanning tunneling microscope (STM) topography images show characteristics.
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that the borophene is atomically thin and has hundreds of Subsequently, Wu et al. employed low-energy electron
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nanometers in horizontal size (Figure 4a,b). STM also reveals microscopy (LEEM) to monitor the nucleation and growth of the
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that the deposition rate and substrate temperature determine boron sheets on Cu (111) substrate in real time (Figure 5a).[31] A
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collectively proportions of each structure. A low deposition rate self-made electron beam evaporation source device was used
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is favorable to the flat striped phase consisted of rectangular to control the deposition rate of boron as 0.05 ML · min 1. Two-
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lattices without hollow hexagons (Figure 4c), while a high dimensional boron with a size of 10–100 μm2 was synthesized
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deposition rate may render the appearance of a homogeneous on a Cu (111) substrate at 770 K (Figure 5a), and a new
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phase (Figure 4d). Furthermore, the flat phase will transform triangular network structure with a vacancy concentration of
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into a new corrugated striped phase with the increase of the η = 1/5 was obtained, as shown in Figures 5b–d. They also
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temperature. However, both of boron sheets show the metallic repeated the previous work of the borophene on the Ag
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characteristics unlike bulk boron allotropes. substrate and found that the single crystal domain size was
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Other parallel work reported by Feng et al. two different only a few tens of nanometers. Thus, high nucleation density
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structural phases of borophene.[30] The borophenes showed a on the Ag surface and the tendency of boron aggregation
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triangular lattice with different concentrations of hollow limited its size. At the same time, the interaction between the
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hexagons. They found that there were only disordered borophene and the substrate was studied, and it was found
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structures or clusters on the surface when the substrate that the charge transfer occurred between borophene and the
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temperature was below 500 K. When the temperature was substrate but there was no significant covalent bonding. This
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increased to 570 K, it was observed that rectangular lattices work demonstrates that the growth mechanism of borophene
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with parallel atomic rows were tested in the STM image, which is a self-limiting process, which is very beneficial to the
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formation of atomic thin-layer heterojunctions.
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Figure 4. Experimental formation and related structural characterization of
44 different phase borophenes on Ag (111) in two independent groups. a,b)
45 Large-scale STM images of borophene reveal low and medium coverages at
46 different temperatures. Red, blue and white arrows represent regions of
homogeneous-phase, striped-phase nanoribbons and striped-phase islands,
47 respectively. c) STM images for the atomic-scale striped phases
48 (Vsample = 0.1 V, It = 1.0 nA). Flat region exists in the corrugated region. A
49 rectangular lattice is shown in the inset. d) STM images for atomic-scale
homogeneous phase (Vsample = 0.1 V, It = 1.0 nA). Reproduced from refer- Figure 5. Experimental realization of borophene on the Cu (111) surface. a)
50 ence [29] with permission from American Association for the Advancement Real-time nucleation process of borophene at T = 770 K observed by the
51 of Science. e) After the Ag substrate was heated from room temperature to sequence of bright-field LEEM, showing that the suitable position along
52 about 570 K, topographic image of borophene sheets was characterized by down-step edge of Cu (111) terraces and the fast growth speed along the
STM. The borophene islands are named as ‘S1’ phase. f) High-magnification step-edge direction. b) Ultrahigh-magnification STM image of borophene. c)
53 STM image of another phase (S2). g) STM image of borophene after DFT-simulated STM data, which is in good agreement with that of the
54 increasing the temperature up to 650 K. The two different phases: ‘S1’ and experiment. d) Top view of the borophene model structure with green
55 ‘S2’. Most boron islands tend to transform to the S2 phase, but a small boron atoms and bonds. The regular zigzag motif with red dashed lines
number of the islands with the S1 phase still remains. Reproduced from existing in (b) and (c). Reproduced from reference [31] with permission from
56 reference [30] with permission from Nature Publishing Group. Nature Publishing Group.
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Kiraly et al. selected Au (111) substrates to grow borophene minimize the energy, resulting in the formation of nanoscale
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via MBE, because it is one of the low-energy metal surfaces that borophene islands (Figure 6a,b). Moreover, the islands, which
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can be reconstructed to realize low surface energy.[32] Unlike the were confirmed by atomic-resolution imaging, are consistent
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growth process on the Ag substrates, boron atoms diffuse into with a calculated v1/12 boron structure nucleated at the network
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Au at high temperature and separate to the surface of the nodes (Figure 6c). When the concentration of boron was
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substrate to form the islands of the boron sheets when the increased, the trigonal network broke down which resulted in
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substrate is cooled. In the initial stage of the growth of low- the appearance of larger-scale borophene islands. Thus, the
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concentration boron, Au (111) reconstructs trigonal networks to domains will extend at least several tens of nanometers due to
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the increase of boron dose. Like borophene grown on other
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metal substrates via MBE, the one on Au (111) surface is also
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metallic.
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Although much progress has been made in experiments,
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the stability of borophene sheets grown under ultra-high
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vacuum is still a huge challenge. Moreover, the metallic
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character of borophene dramatically also hinders its extensive
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applications in nanoelectronic devices. Thus, the preparation of
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crystalline semiconducting borophene sheets with stable
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structure is necessary to high-performance nanoelectronics and
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optoelectronics. Along this direction, our group has successfully
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prepared ultrastable crystalline semiconducting hydrogenated
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borophenes in a hydrogen-rich atmosphere.[36] Under a control-
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lable condition, the borophenes were realized experimentally
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without any metal substrates using a three-step heating
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procedure in the condition of in-situ thermal decomposition of
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sodium borohydride (NaBH4). First, the NaBH4 powders was
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annealed to 490 °C to obtain an initial intermediate. Second,
26 Figure 6. Experimental measurement of borophene on Au (111). a) STM
increasing the temperature to 550 °C, a more stable intermedi-
27 image of a superclean Au (111) surface before the deposition of boron
(V = 1.5 V, I = 100 pA). b) Structure of a herringbone reconstruction ate was formed. Third, large-scale hydrogenated borophenes
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changed to a trigonal network at the boron deposition temperature of can be obtained when the intermediate was ramped to 600 °C.
29 550 °C, where borophene islands with nanoscale (an area selected with a
The borophenes, with thickness of less than 1 nm, can be
30 white dashed line) form at the nodes, rendering templated growth across
the Au (111) surface (V = 0.1 V, I = 200 pA). c) Atomic model structure of observed by magnification SEM image, as shown in Figure 7a.
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the v1/12 borophene and the corresponding structure on Au (111) given by The average lateral size, which is statistically analyzed, is close
32 theoretical calculations. (Left, top view; right, side view). Reproduced from
to 5.14 μm. Atomic force microscopy (AFM) displays that the
33 reference [32] with permission from American Chemical Society.
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Figure 7. Experimental realization of ultrastable crystalline semiconducting hydrogenated borophene. a) SEM image of the hydrogenated borophenes. b) AFM
53 image of the borophene. The inset shows height analysis along the red line, indicating a thickness of around 0.78 nm. c) Low-magnification TEM image of the
54 borophene. d) HRTEM image of the borophene. The inset shows the corresponding SAED image. e) HRTEM image obtained by masking the FFT pattern
55 extracted from the red rectangular region in (d). f) HRTEM image extracted from (e). The inset shows the corresponding calculation model. g) XPS analysis of
B1s peak of the borophenes. h) PL spectrum of the borophenes. The red line is the corresponding Gaussian fit. i) I–V characteristics of the borophene-based
56 memory device. Reproduced from reference [36] with permission from Wiley-VCH.
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ultrathin Mo3B films exhibit outstanding catalytic performance potential device applications. Just as the device demonstrations
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in hydrogen evolution reaction (HER) (Figure 10f), and super- mentioned in this review, borophene has been tried as chemical
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long cycling stability as well as outstanding resistance to sensors, nonvoltaic memory device, supercapacitor, electro-
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corrosion. chemical hydrogenation production, and cancer therapy and
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Therefore, borophene is being developed for potential imaging. More importantly, the applications regarding ad-
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applications in electronic information, electrochemistry and vanced information storage devices, photodetectors and sen-
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biomedicine, which may open a door for its real device sors still remain relatively unexplored. So, we believe that there
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applications. are still many fascinating properties and device applications to
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be explored.
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Although some progress has been made, the research of
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5. Summary and outlook borophene is still in its infancy. This is a research field where
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both challenges and opportunities coexist, and it requires
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In summary, boron with severe electron deficiency behavior systematic and in-depth exploration for preparation, properties
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results in structural diversity and complexity for boron nano- and applications of borophene. Specially, the controlled syn-
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structures. After the discovery of graphene, theoretical studies thesis of crystalline and semiconducting borophene like α’-4H-
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for boron has been also focused on 2D boron sheet – borophene needs more efforts to explore more kinds of novel
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borophene. Thus, some possible borophene structures have and fascinating physical properties. We hope this minireview
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been searched, and then a plenty of unique physical properties, can remove set thinking and blaze new trails about the
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such as mechanical compliance, highly anisotropic electronic borophene field theoretically and experimentally. Therefore, we
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structure, optical transparency, ultrahigh thermal conductance have every reason to believe that borophene can open up
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and phonon-mediated superconductivity, were quickly inves- plenty of possibilities to lead the research and development of
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tigated. Meanwhile, the feasible strategies to synthesize the the fantastic 2D materials.
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borophenes were also proposed by the theoretical studies.
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Subsequently, three independent groups have successfully
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reported different 2D boron sheets on metal substrate by CVD Acknowledgements
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and MBE almost at the same time. Recently, using the MBE
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method, some different borophene structures were also realized This work was supported by the National Natural Science
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experimentally on other metal substrates. However, the struc- Foundation of China (61774085), Natural Science Foundation of
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tural instability and the metallic nature of the boron sheets limit Jiangsu Province (BK20151475), Six Talent Peaks Project in Jiangsu
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seriously their applications in nanoelectronic and optical Province (XCL-046), the Research Fund of State Key Laboratory of
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devices. Therefore, the preparation of ultrastable semiconduct- Mechanics and Control of Mechanical Structures (NUAA) (MCMS-I-
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ing borophenes is a prerequisite for the borophene application 0420G02) and the Priority Academic Program Development of
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towards advanced nanoelectronics and optoelectronics. Jiangsu Higher Education Institutions.
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To stabilize the structure of the borophenes, some effective
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strategies, such as bulking, hydrogenation and substrate
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assistance, are proposed. A number of unique and desirable Conflict of Interest
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physical properties are predicted systematically. Experimentally,
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some progresses of borophene synthesis via CVD and MBE have The authors declare no conflict of interest.
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been made, but stable semiconducting borophenes are still
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very limited. So, the development of large-area controllable Keywords: boron sheets · borophene · monolayers ·
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preparation of stable semiconducting borophene is extremely semiconductors · two-dimensional materials
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necessary to meet the requirement of vital application in
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boron-based nanoelectronic and optoelectronic devices. The
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possible approaches include the elemental doping for the [1] K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V.
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reported borophene and the implement of different synthetic Dubonos, I. V. Grigorieva, A. A. Firsov, Science 2004, 306, 666–669.
45 [2] A. K. Geim, K. S. Novoselov, Nat. Mater. 2007, 6, 183–191.
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