KST5179 NPN EPITAXIAL SILICON TRANSISTOR

RF AMPLIFIER TRANSISTOR
SOT-23

ABSOLUTE MAXIMUM RATINGS (TA=25 Î)

Characteristic Symbol Rating Unit

Collector-Base Voltage VCBO 20 V

Collector-Emitter Voltage VCEO 12 V
Emitter-Base Voltage VEBO 2.5 V

Î)
Collector Current IC 50 mA

Î
Collector Dissipation (T A=25 mW
Î
PC 350
mW/
Î
Derate above 25 2.8

Î
Junction Temperature TJ 150
Storage Temperature T STG -55~150

1. Base 2. Emitter 3. Collector

ELECTRICAL CHARACTERISTICS (TA=25 Î)

Characteristic Symbol Test Conditions Min Max Unit

Collector-Base Breakdown Voltage BVCBO IC=0.01mA, IE=0 20 V

Collector-Emitter Breakdown Voltage BVCEO IC=3mA, IB=0 12 V

À
Emitter Base Breakdown Voltage BVEBO IE=0.01mA, IC=0 2.5 V
Collector Cut-off Current ICBO VCB=15V, IE=0 0.02
DC Current Gain hFE VCE=1V, IC=3mA 25
Collector-Emitter Saturation Voltage VCE (sat) IC=10mA, IB=1mA 0.4 V
Base-Emitter Saturation Voltage VBE (sat) IC=10mA, IB=1mA 1 V
Current Gain Bandwidth Product fT VCE=6V, IC=5mA 900 MHz
Collector Base Capactiance CCB VCB=10V, IE=0, f=0.1MHz to 1MHz 1 pF
Small Signal Current Gain hFE VCE=6V, IC=2mA, f=1KHz 25
Noise Figure NF

VCE=6V, IC=1.5mA, f=200MHz 4.5 dB
RS=50
Common Emitter Amplifier Power Gain GPE VCE=6V, IC=5mA, f=200MHz 15 dB