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Tlc555 Lincmos™ Timer: 1 Features
Tlc555 Lincmos™ Timer: 1 Features
TLC555
SLFS043I – SEPTEMBER 1983 – REVISED JULY 2019
• Sequential timing (1) For all available packages, see the orderable addendum at
the end of the data sheet.
• Time delay generation
• Pulse width modulation Simplified Schematic
• Pulse position modulation CONT RESET
5 4
• Linear ramp generator VDD
8
3 Description 6
R
R1
THRES
The TLC555 is a monolithic timing circuit fabricated R 1
3
OUT
using the TI LinCMOS™ process. The timer is fully
S
compatible with CMOS, TTL, and MOS logic and
R
operates at frequencies up to 2 MHz. Because of its
high input impedance, this device supports smaller
2
timing capacitors than those supported by the NE555 TRIG
or LM555. As a result, more accurate time delays and R
oscillations are possible. Power consumption is low 7
DISCH
across the full range of power-supply voltage. 1
GND
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TLC555
SLFS043I – SEPTEMBER 1983 – REVISED JULY 2019 www.ti.com
Table of Contents
1 Features .................................................................. 1 7.3 Feature Description................................................. 14
2 Applications ........................................................... 1 7.4 Device Functional Modes........................................ 19
3 Description ............................................................. 1 8 Application and Implementation ........................ 20
4 Revision History..................................................... 2 8.1 Application Information............................................ 20
8.2 Typical Applications ................................................ 20
5 Pin Configuration and Functions ......................... 4
6 Specifications......................................................... 6 9 Power Supply Recommendations...................... 26
6.1 Absolute Maximum Ratings ...................................... 6 10 Layout................................................................... 27
6.2 Recommended Operating Conditions....................... 6 10.1 Layout Guidelines ................................................. 27
6.3 Thermal Information .................................................. 6 10.2 Layout Example .................................................... 27
6.4 Electrical Characteristics: VDD = 2 V for TLC555C, 11 Device and Documentation Support ................. 28
VDD = 3 V for TLC555I ............................................... 7 11.1 Receiving Notification of Documentation Updates 28
6.5 Electrical Characteristics: VDD = 5 V......................... 8 11.2 Community Resources.......................................... 28
6.6 Electrical Characteristics: VDD = 15 V....................... 9 11.3 Trademarks ........................................................... 28
6.7 Operating Characteristics........................................ 11 11.4 Electrostatic Discharge Caution ............................ 28
6.8 Typical Characteristics ............................................ 12 11.5 Glossary ................................................................ 28
7 Detailed Description ............................................ 14 12 Mechanical, Packaging, and Orderable
7.1 Overview ................................................................. 14 Information ........................................................... 28
7.2 Functional Block Diagram ....................................... 14
4 Revision History
Changes from Revision H (August 2016) to Revision I Page
• Added MIN value for input voltage in Absolute Maximum Ratings ........................................................................................ 6
• Added discharge pin in Absolute Maximum Ratings .............................................................................................................. 6
• Changed MIN supply voltage based on part number in Recommended Operating Conditions............................................. 6
• Added power dissipation capacitance TYP value in Electrical Characteristics: VDD = 2 V for TLC555C, VDD = 3 V for
TLC555I .................................................................................................................................................................................. 7
• Added trigger, threshold capacitance TYP value in Electrical Characteristics: VDD = 5 V ..................................................... 8
• Changed VOH test condition current to –1 mA in Electrical Characteristics: VDD = 5 V.......................................................... 8
• Added power dissipation capacitance TYP value in Electrical Characteristics: VDD = 5 V .................................................... 9
• Added trigger, threshold capacitance TYP value in Electrical Characteristics: VDD = 15 V ................................................... 9
• Added power dissipation capacitance TYP value in Electrical Characteristics: VDD = 15 V ................................................ 10
• Added Operating Characteristics to the Specifications section............................................................................................ 11
• Added Supply Current vs Supply Voltage chart to the Typical Characteristics section ....................................................... 12
• Added Control Impedance vs Temperature chart to the Typical Characteristics section .................................................... 12
• Added Output Low Resistance vs Temperature chart to the Typical Characteristics section.............................................. 12
• Added Output High Resistance vs Temperature chart to the Typical Characteristics section............................................. 12
• Added Propagation Delay vs Control Voltage chart, VDD = 2 V to the Typical Characteristics section ............................... 12
• Added Propagation Delay vs Control Voltage chart, VDD = 5 V to the Typical Characteristics section ............................... 12
• Changed trigger high hold time to 1 µs in the Monostable Operation section ..................................................................... 15
• Changed minimum monostable pulse width to 1 µs in the Monostable Operation section.................................................. 15
• Changed Output Pulse Duration vs Capacitance chart scale down to 0.001 ms in the Monostable Operation section...... 15
• Added more astable frequency formulas to the Astable Operation section ......................................................................... 17
• Changed scale on Free-Running Frequency vs Timing Capacitance chart up to 2 MHz in the Astable Operation section 18
• Added CONT pin table note to the Function Table in the Device Functional Modes section .............................................. 19
• Changed the application curve chart in the Pulse-Width Modulation section ...................................................................... 22
• Changed the application curve charts in the Pulse-Position Modulation section ................................................................. 23
• Added clamping diodes to Sequential Timer Circuit in the Sequential Timer section.......................................................... 24
• Added Feature Description section, Device Functional Modes, Application and Implementation section, Power
Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical,
Packaging, and Orderable Information section ...................................................................................................................... 1
• Changed values in the Thermal Information table to align with JEDEC standards................................................................ 6
• Deleted Dissipation Ratings table .......................................................................................................................................... 6
GND 1 8 VDD
TRIG 2 7 DISCH
OUT 3 6 THRES
RESET 4 5 CONT
PW Package
14-Pin TSSOP FK Package
Top View 20-Pin LCCC
Top View
GND VDD
GND
1 14
20 VDD
NC
NC
19 NC
NC 2 13 NC
1
2
3
TRIG 3 12 DISCH NC 4 18 NC
NC 4 11 NC TRIG 5 17 DISCH
NC 6 16 NC
OUT 5 10 THRES
OUT 7 15 THRES
NC 6 9 NC
NC 8 14 NC
RESET 7 8 CONT
11
12
10
13
9
NC
NC
NC
RESET
CONT
Pin Functions: PW and FK
PIN
I/O DESCRIPTION
NAME TSSOP LCCC
CONT 8 12 I Controls comparator thresholds. Outputs 2/3 VDD and allows bypass capacitor connection.
DISCH 12 17 O Open-collector output to discharge timing capacitor.
GND 1 2 — Ground.
1, 3, 4, 6, 8,
2, 4, 6,
NC 9, 11, 13, 14, — No internal connection.
9, 11, 13
16, 18, 19
OUT 5 7 O High current timer output signal.
RESET 7 10 I Active low reset input forces output and discharge low.
THRES 10 15 I End of timing input. THRES > CONT sets output low and discharge low.
TRIG 3 5 I Start of timing input. TRIG < 1/2 CONT sets output high and discharge open.
VDD 14 20 — Power-supply voltage.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)Continuous total power dissipation and lead temperature
parameters from Absolute Maximum Ratings
MIN MAX UNIT
Supply, VDD (2) –0.3 18
Voltage Input, any input –0.3 VDD V
Discharge –0.3 18
Sink, discharge or output 150
Current mA
Source, output, IO 15
C-suffix 0 70
I-suffix –40 85
Operating, TA
Q-suffix –40 125
Temperature °C
M-suffix –55 125
Case, for 60 seconds FK package –65 150
Storage, Tstg –65 150
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network GND.
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
(1) Full range is 0°C to 70°C the for TLC555C, and –40°C to 85°C for the TLC555I. For conditions shown as Max, use the appropriate
value specified in the Recommended Operating Conditions table.
(2) These values apply for the expected operating configurations in which THRES is connected directly to DISCH or to TRIG.
(3) CPD is used to determine the dynamic power consumption.
(4) PD = VDD2 fo (CPD + CL) where fo = output frequency, CL = output load capacitance, VDD = supply voltage
(1) Full range is 0°C to 70°C the for TLC555C, –40°C to 85°C for the TLC555I, –40°C to 125°C for the TLC555Q, and –55°C to 125°C for
the TLC555M. For conditions shown as Max, use the appropriate value specified in the Recommended Operating Conditions table.
8 Submit Documentation Feedback Copyright © 1983–2019, Texas Instruments Incorporated
(2) These values apply for the expected operating configurations in which THRES is connected directly to DISCH or to TRIG.
(3) CPD is used to determine the dynamic power consumption.
(4) PD = VDD2 fo (CPD + CL) where fo = output frequency, CL = output load capacitance, VDD = supply voltage
(1) Full range is 0°C to 70°C for TLC555C, –40°C to 85°C for TLC555I, –40°C to 125°C for the TLC555Q, and –55°C to 125°C for
TLC555M. For conditions shown as Max, use the appropriate value specified in the Recommended Operating Conditions table.
Copyright © 1983–2019, Texas Instruments Incorporated Submit Documentation Feedback 9
Product Folder Links: TLC555
TLC555
SLFS043I – SEPTEMBER 1983 – REVISED JULY 2019 www.ti.com
(2) These values apply for the expected operating configurations in which THRES is connected directly to DISCH or TRIG.
(3) CPD is used to determine the dynamic power consumption.
(4) PD = VDD2 fo (CPD + CL) where fo = output frequency, CL = output load capacitance, VDD = supply voltage
(1) Timing interval error is defined as the difference between the measured value and the average value of a random sample from each
process run.
(2) RA, RB, and CT are as defined in Figure 12.
600
Discharge Switch On-State Resistance (W)
100
70 IO(on) ³ 1 mA
VDD = 2 V, IO = 1 mA
CL » 0
10 300
7 VDD = 15 V, IO = 100 mA tPHL
200
4
2 100
(1)
tPLH
1 0
-75 -50 -25 0 25 50 75 100 125 0 2 4 6 8 10 12 14 16 18 20
Temperature (°C) Supply Voltage (V)
Figure 1. Discharge Switch On-State Resistance vs (1) The effects of the load resistance on these values must be
Free-Air Temperature taken into account separately.
70qC
200
Impedance (k:)
85qC
125qC 60
150
50
100
40
50 30
0 20
0 2 4 6 8 10 12 14 16 -75 -50 -25 0 25 50 75 100 125
Supply Voltage (V) D001
Temperature (qC) D002
60
300
50
250
40
200
30
150
20
10 100
0 50
-75 -50 -25 0 25 50 75 100 125 -75 -50 -25 0 25 50 75 100 125
Temperature (qC) D003
Temperature (qC) D004
Figure 5. Output Low Resistance vs Temperature Figure 6. Output High Resistance vs Temperature
7 Detailed Description
7.1 Overview
The TLC555 is a precision timing device used for general-purpose timing applications up to 2.1 MHz. All inputs
are level sensitive not edge triggered inputs.
CONT RESET
5 4
VDD
8
R
R1
6
THRES 3
R 1 OUT
2
TRIG
R
7
DISCH
1
GND
Pin numbers are for all packages except the PW and FK package. RESET can override TRIG, which can override
THRES (when CONT pin is 2/3 VDD).
The resistance of “R" resistors vary with VDD and temperature. The resistors match each other very well across VDD
and temperature for a temperature stable control voltage ratio.
V DD
(5 V to 15 V)
RA 5 8
CONT V DD
4
RESET
7
DISCH
3
OUT Output
6
THRES
2
Input TRIG
GND
C
1
Monostable operation is initiated when TRIG voltage falls below the trigger threshold. Once initiated, the
sequence ends only if TRIG is high for at least 1 µs before the end of the timing interval. When the trigger is
grounded, the comparator storage time can be as long as 1 µs, which limits the minimum monostable pulse width
to 1 µs. The output pulse duration is approximately tw = 1.1 × RAC. Figure 11 is a plot of the time constant for
various values of RA and C. The threshold levels and charge rates both are directly proportional to the supply
voltage, VDD. The timing interval is, therefore, independent of the supply voltage, so long as the supply voltage is
constant during the time interval.
Applying a negative-going trigger pulse simultaneously to RESET and TRIG during the timing interval discharges
capacitor C and reinitiates the cycle, commencing on the positive edge of the reset pulse. The output is held low
as long as the reset pulse is low. To prevent false triggering, when RESET is not used it must be connected to
VDD.
10000
5000 1k:
2000 10k:
1000 100k:
500 1M:
10M:
200
100
50
20
Input Voltage 10
Time (ms)
Voltage − 2 V/div
5
2
1
0.5
0.2
0.1
0.05
Output Voltage 0.02
0.01
0.005
0.002
0.001
0.01 0.1 0.2 0.5 1 2 3 5 710 20 50 100 1000
Capacitor Voltage
Capacitance (nF) D006
VDD
(5 V t o 15 V)
0.01 PF
Open
Voltage − 1 V/div
(see Note A) 5 8
RA
CONT VDD
4
RESET
7
DISCH 3
OUT Output
RB 6
THRES t
H
2
TRIG tL Output Voltage
GND
C 1
Figure 13 shows typical waveforms generated during astable operation. The output high-level duration tH and
low-level duration tL for frequencies below 100 kHz can be calculated as follows:
tH = 0.693 (R A + RB )C (1)
tL = 0.693 (RB )C (2)
Other useful relationships are shown below:
period = tH + tL = 0.693 (R A + 2RB )C (3)
1.44
frequency »
(R A +2RB )C (4)
tL RB
Output driver duty cycle = =
tH + tL R A + 2RB (5)
tH RB
Output waveform duty cycle = = 1-
tH + tL R A + 2RB (6)
t RB
Low-to-high ratio = L =
tH R A + RB (7)
tc(L)
tc(H)
VDD
tPHL
2/3 VDD
1/3 VDD
GND
tPLH
2000
1000 1k:
10k:
500 100k:
1M:
200
10M:
100
50
20
Frequency (kHz)
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0.1 0.2 0.5 1 2 3 5 710 20 50 100 1000 10000
Capacitance (nF) D012
Input Voltage
Output Voltage
Capacitor Voltage
(1) For conditions shown as MIN or MAX, use the appropriate value specified under Electrical Characteristics: VDD = 5 V.
(2) CONT pin open or 2/3 VDD.
COMPONENT COUNT
Transistors 39
Resistors 5
THRES
VDD
CONT
OUT
DISCH
GND
TRIG RESET
Copyright © 2016, Texas Instruments Incorporated
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
4 8 RA
Input RESET VDD
3
2 OUT Output
TRIG
7
DISCH
5
CONT 6
0.01 PF THRES
GND C
1
2N3906
Voltage − 2 V/div
Input Voltage
Output Voltage
Capacitor Voltage
4 8 RA
RESET VDD
3
Clock 2 OUT Output
TRIG
Input
7
DISCH
Modulation
5
Input CONT 6
(see Note A) THRES
GND
1 C
A. The modulating signal can be direct or capacitively coupled to CONT. For direct coupling, consider the effects of
modulation source voltage and impedance on the bias of the timer.
60
40
20
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Control Voltage (V) D015
VDD (5 V to 15 V)
4 8 RA
RESET VDD 3
2 OUT Output
TRIG
7
DISCH
Modulation
RB
Input 5 CONT 6
THRES
(see Note A)
GND
C
A. The modulating signal can be direct or capacitively coupled to CONT. For direct coupling, consider the effects of
modulation source voltage and impedance on the bias of the timer.
RA = 3 kΩ RB = 309 kΩ C = 1 nF
4 100
3.5
80
Output Frequency (kHz)
60
2.5
2
40
1.5
20
1
0.5 0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Control Voltage (V) D013
Control Voltage (V) D014
Figure 23. Pulse-Position-Modulation Frequency Figure 24. Pulse-Position-Modulation Duty Cycle
vs Control Voltage, VDD = 5 V vs Control Voltage, VDD = 5 V
RA 33 k: RB 33 k:
4 8 1N4148 4 8 1N4148 4 8 RC
33 k: RESET VDD RESET VDD RESET VDD
3 3 3
2 OUT 2 OUT 2 OUT
TRIG TRIG TRIG
0.001 PF 0.001 PF
7
S
DISCH
7 DISCH 7 DISCH
5 5 5
CONT 6 CONT 6 CONT 6
THRES THRES THRES
GND GND GND
0.01 1 0.01 1 0.01 1
CA CB CC
PF PF PF
CA = 10 PF CC = 14.7 PF
RA = 100 k: Out pu t A Out pu t B RC = 100 k: Out pu t C
CB = 4.7 PF
RB = 100 k:
NOTE: S closes momentarily at t = 0.
twB
Voltage − 5 V/div
t=0
t − Time − 1 s/div
See Figure 25
50V
R1 1000pF
100k D1
BAT54WSTR
TP1
R2
Reset 2.20k C9
C1
50V D2 R3 50V
1000pF BAT54WSTR 10.0k 1000pF
D6
TP3
U1 BAT54WSTR
3 R9 R4
VDD Output
10.0 10.0
R5
RESET
10.0k C10
D7 50V
DISCH BAT54WSTR
5 1000pF
THRES
C8
1 100V
TRIG
C6 0.01uF
C7 50V
TLC555CP 1000pF
50V
R6 D4 1000pF
100k BAT54WSTR
TP2
C4 J1
R7
Trig 10.0k
50V Vcc D3
0.1uF C11 C12 SMBJ15A-13-F
C3 D5 R8 J2 50V 50V
50V BAT54WSTR 10.0k 10uF 0.1uF
1000pF
GND
5V 8 kV 12 kV
15 V Not recommended 12 kV
(1) Sample results. Results may vary with populated components, board layout, and samples used.
10 Layout
C3
GND VDD
R1
TLC555
TRIG DISCH
OUT THRES
C1
RESET CONT
C2
Figure 28. Layout Example
11.3 Trademarks
LinCMOS, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
11.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
www.ti.com 26-Aug-2020
PACKAGING INFORMATION
Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) Ball material (3) (4/5)
(6)
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com 26-Aug-2020
Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) Ball material (3) (4/5)
(6)
TLC555IPE4 ACTIVE PDIP P 8 50 Green (RoHS NIPDAU N / A for Pkg Type -40 to 85 TLC555IP
& no Sb/Br)
TLC555QDR ACTIVE SOIC D 8 2500 Green (RoHS NIPDAU Level-1-260C-UNLIM -40 to 125 TL555Q
& no Sb/Br)
TLC555QDRG4 ACTIVE SOIC D 8 2500 Green (RoHS NIPDAU Level-1-260C-UNLIM TL555Q
& no Sb/Br)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE OPTION ADDENDUM
www.ti.com 26-Aug-2020
• Automotive: TLC555-Q1
• Military: TLC555M
• Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
• Military - QML certified for Military and Defense Applications
Addendum-Page 3
PACKAGE MATERIALS INFORMATION
www.ti.com 26-Feb-2019
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com 26-Feb-2019
Pack Materials-Page 2
PACKAGE OUTLINE
D0008A SCALE 2.800
SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
SEATING PLANE
.228-.244 TYP
[5.80-6.19]
.004 [0.1] C
A PIN 1 ID AREA
6X .050
[1.27]
8
1
.189-.197 2X
[4.81-5.00] .150
NOTE 3 [3.81]
4X (0 -15 )
4
5
8X .012-.020
B .150-.157 [0.31-0.51]
.069 MAX
[3.81-3.98] .010 [0.25] C A B [1.75]
NOTE 4
.005-.010 TYP
[0.13-0.25]
4X (0 -15 )
SEE DETAIL A
.010
[0.25]
.004-.010
0 -8 [0.11-0.25]
.016-.050
[0.41-1.27] DETAIL A
(.041) TYPICAL
[1.04]
4214825/C 02/2019
NOTES:
1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches.
Dimensioning and tolerancing per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed .006 [0.15] per side.
4. This dimension does not include interlead flash.
5. Reference JEDEC registration MS-012, variation AA.
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EXAMPLE BOARD LAYOUT
D0008A SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
8X (.061 )
[1.55]
SYMM SEE
DETAILS
1
8
8X (.024)
[0.6] SYMM
(R.002 ) TYP
[0.05]
5
4
6X (.050 )
[1.27]
(.213)
[5.4]
EXPOSED
METAL EXPOSED
METAL
.0028 MAX .0028 MIN
[0.07] [0.07]
ALL AROUND ALL AROUND
4214825/C 02/2019
NOTES: (continued)
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EXAMPLE STENCIL DESIGN
D0008A SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
8X (.061 )
[1.55] SYMM
1
8
8X (.024)
[0.6] SYMM
(R.002 ) TYP
5 [0.05]
4
6X (.050 )
[1.27]
(.213)
[5.4]
4214825/C 02/2019
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
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