EE537 Circuit Simulation Lab

Assignment 3

Name: <Sabarna Chakraborti>

ID Number: <2020EEZ0025> September 4, 2021

1 Discrete MOS Transistors

The objective of the simulation study of this section is to understand the use of models of discrete
type of NMOS and PMOS transistors.

1.1 Plot the input and output characteristic plots (i.e.ID vs. VGS and ID vs.
VDS)
Mosfet is a device that is used mainly as a gate controlled system.The important part is current
through mosfet does not depend on the VDS but on VGS .That is very important because it provides
a new way to break the Ohm’s Law.The current equation in a mosfet

ID = 1/2µn Cox (W/L)(VGS − Vth )2

For this simulation we have used NMOS 2N7002.The specifications are given below

1.png

Figure 1: Specification sheet of

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