P2804ND5G

N&P-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID Channel
40V 28mΩ @VGS =10V 21A N
-40V 48mΩ @VGS = -10V -16A P

TO-252-5

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITS
N 40
Drain-Source Voltage VDS
P -40
V
N ±20
Gate-Source Voltage VGS
P ±20
N 21
TC = 25 °C
P -16
Continuous Drain Current ID
N 13
TC = 100°C
P -10
A
1
N 50
Pulsed Drain Current IDM
P -50
N 26
Avalanche Current IAS
P -26
N 33
Avalanche Energy L = 0.1mH EAS mJ
P 33
N
TC = 25 °C 21
P
Power Dissipation PD W
N
TC = 100 °C 8
P
Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C

REV 1.0 1 2014-5-8

P2804ND5G
N&P-Channel Enhancement Mode MOSFET

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Case RqJC 6
°C / W
Junction-to-Ambient RqJA 40
1
Pulse width limited by maximum junction temperature.

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

LIMITS
PARAMETER SYMBOL TEST CONDITIONS CH. UNITS
MIN TYP MAX
STATIC
VGS = 0V, ID = 250mA N 40
Drain-Source Breakdown Voltage V(BR)DSS
VGS = 0V, ID = -250mA P -40
V
VDS = VGS, ID = 250mA N 1 2 3
Gate Threshold Voltage VGS(th)
VDS = VGS, ID = -250mA P -1 -2 -3
VDS = 0V, VGS = ±20V N ±100
Gate-Body Leakage IGSS nA
VDS = 0V, VGS = ±20V P ±100
VDS = 32V, VGS = 0V N 1
VDS = -32V, VGS = 0V P -1
Zero Gate Voltage Drain Current IDSS mA
VDS =30V, VGS = 0V, TJ = 55 °C N 10
VDS = -30V, VGS = 0V, TJ = 55 °C P -10
VDS = 5V, VGS = 10V N 50
On-State Drain Current1 ID(ON) A
VDS = -5V, VGS = -10V P -50
VGS = 5V, ID = 6A N 35 49
Drain-Source On-State VGS = -5V, ID = -4.5A P 65 85
RDS(ON) mΩ
Resistance1 VGS = 10V, ID = 7A N 18 28
VGS = -10V, ID = -5.5A P 33 48
VDS = 10V, ID = 7A N 16
Forward Transconductance1 gfs S
VDS = -10V, ID = -5.5A P 11

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P2804ND5G
N&P-Channel Enhancement Mode MOSFET

DYNAMIC
N 797
Input Capacitance Ciss
N-Channel P 856
VGS = 0V, VDS = 20V, f = 1MHz
N 180
Output Capacitance Coss pF
P-Channel P 191
VGS = 0V, VDS = -20V, f = 1MHz N 132
Reverse Transfer Capacitance Crss
P 128
N-Channel N 17
Total Gate Charge2 Qg VDS = 0.5V(BR)DSS, VGS = 10V, P 18
ID = 7A
N 4
Gate-Source Charge2 Qgs nC
P-Channel P 4
2 VDS = 0.5V(BR)DSS, VGS = -10V, N 5
Gate-Drain Charge Qgd
ID = -5.5A P 6
N 10
Turn-On Delay Time2 td(on)
N-Channel P 10
VDS = 20V
N 15
Rise Time2 tr ID @ 1A, VGS = 10V, RGEN = 6Ω
P 10
nS
2 P-Channel N 20
Turn-Off Delay Time td(off)
VDS = -20V P 25
ID @ -1A, VGS = -10V, RGEN = 6Ω N 10
Fall Time2 tf
P 5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
N 21
Continuous Current IS A
P -16
IF = 7A, VGS = 0V N 1
Forward Voltage1 VSD V
IF = -5.5A, VGS = 0V P -1
IF = 7A, dlF/dt = 100A / mS N 25
Reverse Recovery Time trr nS
IF = -5.5A, dlF/dt = 100A / mS P 35
N 35
Reverse Recovery Charge Qrr nC
P 40
1
Pulse test : Pulse Width  300 msec, Duty Cycle  2％.
2
Independent of operating temperature.

REV 1.0 3 2014-5-8

P2804ND5G
N&P-Channel Enhancement Mode MOSFET

REV 1.0 4 2014-5-8

P2804ND5G
N&P-Channel Enhancement Mode MOSFET

REV 1.0 5 2014-5-8

P2804ND5G
N&P-Channel Enhancement Mode MOSFET

REV 1.0 6 2014-5-8

P2804ND5G
N&P-Channel Enhancement Mode MOSFET

REV 1.0 7 2014-5-8

P2804ND5G
N&P-Channel Enhancement Mode MOSFET

REV 1.0 8 2014-5-8