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Silicon Diffused Power Transistor BU2508DX: General Description
Silicon Diffused Power Transistor BU2508DX: General Description
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low
worst case dissipation.
case isolated
1 2 3 e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V
VCEO Collector-emitter voltage (open base) - 700 V
IC Collector current (DC) - 8 A
ICM Collector current peak value - 15 A
IB Base current (DC) - 4 A
IBM Base current peak value - 6 A
-IB(AV) Reverse base current average over any 20 ms period - 100 mA
-IBM Reverse base current peak value 1 - 5 A
Ptot Total power dissipation Ths ≤ 25 ˚C - 45 W
Tstg Storage temperature -55 150 ˚C
Tj Junction temperature - 150 ˚C
1 Turn-off current.
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Rth j-hs Junction to heatsink without heatsink compound - 3.7 K/W
Rth j-hs Junction to heatsink with heatsink compound - 2.8 K/W
Rth j-a Junction to ambient in free air 35 - K/W
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
2
ICES Collector cut-off current VBE = 0 V; VCE = VCESMmax - - 1.0 mA
ICES VBE = 0 V; VCE = VCESMmax; - - 2.0 mA
Tj = 125 ˚C
IEBO Emitter cut-off current VEB = 7.5 V; IC = 0 A - 227 - mA
BVEBO Emitter-base breakdown voltage IB = 600 mA 7.5 13.5 - V
Rbe Base-emitter resistance VEB = 7.5 V - 33 - Ω
VCEOsust Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 700 - - V
L = 25 mH
VCEsat Collector-emitter saturation voltages IC = 4.5 A; IB = 1.12 A - - 1.0 V
VBEsat Base-emitter saturation voltage IC = 4.5 A; IB = 1.7 A - - 1.1 V
hFE DC current gain IC = 1 A; VCE = 5 V - 13 -
hFE IC = 4.5 A; VCE = 1 V 4 5.5 7.0
VF Diode forward voltage IF = 4.5 A - 1.6 2.0 V
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Cc Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 80 - pF
Switching times (16 kHz line ICsat = 4.5 A; IB(end) = 1.1 A; LB = 6 µH;
deflection circuit) -VBB = 4 V; (-dIB/dt = 0.6 A/µs)
ts Turn-off storage time 5.0 6.0 µs
tf Turn-off fall time 0.4 0.6 µs
Switching times (38 kHz line ICsat = 4.0 A; IB(end) = 0.9 A; LB = 6 µH;
deflection circuit) -VBB = 4 V; (-dIB/dt = 0.6 A/µs)
ts Turn-off storage time 4.7 5.7 µs
tf Turn-off fall time 0.25 0.35 µs
ICsat h FE BU2508DF
TRANSISTOR 100
IC DIODE
t Tj = 25 C
Tj = 125 C
5V
IB IBend
10
t
20us 26us
1V
64us
VCE
1
0.01 0.1 1 10
t IC / A
Fig.1. 16kHz Switching times waveforms. Fig.4. Typical DC current gain. hFE = f (IC)
parameter VCE
0.9
10 %
0.8 IC/IB=
tf t
ts 0.7 3
IB
IBend 4
0.6
5
t 0.5
0.4
0.1 1 10
- IBM IC / A
Fig.2. Switching times definitions. Fig.5. Typical base-emitter saturation voltage.
VBEsat = f (IC); parameter IC/IB
0
0.1 1 10
IC / A
Fig.3. 16kHz Switching times test circuit. Fig.6. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB
0.05
0.9 IC= 0.1
0.02
6A
0.8
4.5A
tp t
3A 0.01 P
D D= p
T
0.7 2A
0 t
T
0.6
0.001
0 1 2 3 4 1.0E-06 1E-04 1E-02 1E+00
IB / A tp / sec
IC / A IC / A
100 100
= 0.01 = 0.01
ICM max ICM max
tp = tp =
10 IC max 10 IC max
10 us 10 us
II II
1 ms 1 ms
I I
0.1 0.1
10 ms 10 ms
DC DC
0.01 0.01
1 10 100 1000 1 10 100 1000
VCE / V VCE / V
Fig.13. Forward bias safe operating area. Ths = 25˚C Fig.14. Forward bias safe operating area. Ths = 25˚C
I Region of permissible DC operation. I Region of permissible DC operation.
II Extension for repetitive pulse operation. II Extension for repetitive pulse operation.
NB: Mounted with heatsink compound and NB: Mounted without heatsink compound and
30 ± 5 newton force on the centre of 30 ± 5 newton force on the centre of
the envelope. the envelope.
MECHANICAL DATA
Dimensions in mm
16.0 max 5.8 max
Net Mass: 5.88 g
3.0
0.7
4.5
3.3
10.0
27 25
max
25.1
25.7
22.5
max
5.1
2.2 max
18.1
4.5
min
1.1
0.4 M
2
0.95 max
5.45 5.45
3.3
Fig.15. SOT399; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
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