VS-10ETF02S-M3, VS-10ETF04S-M3, VS-10ETF06S-M3 Series

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Surface Mount Fast Soft Recovery Rectifier Diode, 10 A
FEATURES
Base
cathode
• Glass passivated pellet chip junction
+
• Meets MSL level 1, per J-STD-020,
2
LF maximum peak of 245 °C
• Designed and qualified according to
2
1 JEDEC®-JESD 47
• Material categorization: for definitions of compliance
1 3
3 please see www.vishay.com/doc?99912
Anode - - Anode
D2PAK (TO-263AB)
APPLICATIONS
• Output rectification and freewheeling in inverters,
PRIMARY CHARACTERISTICS choppers and converters
IF(AV) 10 A
• Input rectifications where severe restrictions on
VR 200 V, 400 V, 600 V conducted EMI should be met
VF at IF 1.2 V
IFSM 140 A DESCRIPTION
trr 50 ns The VS-10ETF..S-M3 fast soft recovery rectifier series has
TJ max. 150 °C been optimized for combined short reverse recovery time
Snap factor 0.6 and low forward voltage drop.
Package D2PAK (TO-263AB) The glass passivation ensures stable reliable operation in
Circuit configuration Single the most severe temperature and power cycling conditions.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS
VRRM 200 to 600 V
IF(AV) Sinusoidal waveform 10
A
IFSM 140
trr 1 A, 100 A/μs 50 ns
VF 10 A, TJ = 25 °C 1.2 V
TJ Range -40 to +150 °C

VOLTAGE RATINGS
VRRM, MAXIMUM PEAK VRSM, MAXIMUM NON-REPETITIVE IRRM
PART NUMBER REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 °C
V V mA
VS-10ETF02S-M3 200 300
VS-10ETF04S-M3 400 500 2.5
VS-10ETF06S-M3 600 700

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current IF(AV) TC = 128 °C, 180° conduction half sine wave 10
Maximum peak one cycle 10 ms sine pulse, rated VRRM applied 115 A
IFSM
non-repetitive surge current 10 ms sine pulse, no voltage reapplied 140
10 ms sine pulse, rated VRRM applied 66
Maximum I2t for fusing I2t A2s
10 ms sine pulse, no voltage reapplied 94
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 940 A2s

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ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop VFM 10 A, TJ = 25 °C 1.2 V
Forward slope resistance rt 12.7 m
TJ = 150 °C
Threshold voltage VF(TO) 1.25 V
TJ = 25 °C 0.1
Maximum reverse leakage current IRM VR = rated VRRM mA
TJ = 150 °C 2.5

RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Reverse recovery time trr 200 ns IFM
IF at 10 Apk trr
Reverse recovery current Irr 25 A/μs 2.75 A
25 °C t
dir
Reverse recovery charge Qrr 0.32 μC dt Qrr
Snap factor S 0.6 IRM(REC)

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
TJ, TStg -40 to +150 °C
temperature range
Maximum thermal resistance 
RthJC DC operation 1.5
junction to case
°C/W
Maximum thermal resistance 
RthJA (1) 40
junction to ambient (PCB mount)
2 g
Approximate weight
0.07 oz.
10ETF02S
Marking device Case style D2PAK (TO-263AB) 10ETF04S
10ETF06S
Note
(1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W.
For recommended footprint and soldering techniques refer to application note #AN-994

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 VS-10ETF02S-M3, VS-10ETF04S-M3, VS-10ETF06S-M3 Series
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150 20
10ETF..S Series 10ETF..S Series 90°

Maximum Average Forward

180°
Maximum Allowable Case

145 RthJC (DC) = 1.5 °C/W TJ = 150 °C 60° 120°

16
DC
Temperature (°C)

Power Loss (W)

140 30°
Ø
Conduction angle 12 RMS limit

135
8
130
Ø
120° 4 Conduction period
125
30° 60° 90°
180°
120 0
0 2 4 6 8 10 12 0 4 8 12 16

Average Forward Current (A) Average Forward Current (A)

Fig. 1 - Current Rating Characteristics Fig. 4 - Forward Power Loss Characteristics

150 130
10ETF..S Series At any rated load condition and with
120 rated Vrrm applied following surge.
Maximum Allowable Case

145 RthJC (DC) = 1.5 °C/W Initial Tj = 150°C

110
Forward Current (A)
Peak Half Sine Wave at 60 Hz 0.0083s
Temperature (°C)

100 at 50 Hz 0.0100s
140
Ø 90
Conduction period
135 80
70
130
DC 60
60°
120°
50
125
30° 90° 40 VS-10ETF..S Series
180°
120 30
0 2 4 6 8 10 12 14 16 1 10 100

Average Forward Current (A) Number of Equal Amplitude Half Cycle

Current Pulses (N)
Fig. 2 - Current Rating Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current

16 150
120° Maximum non-repetitive surge current
14 versus pulse train duration.
Maximum Average Forward

90° 130
Initial Tj = Tj max.
60° No voltage reapplied
Forward Current (A)
Peak Half Sine Wave

12 180°
30° 110 Rated Vrrm reapplied
Power Loss (W)

10 RMS limit
90
8
70
6
Ø 50
4 Conduction angle

10ETF..S Series 30 VS-10ETF..S Series

2
TJ = 150 °C
0 10
0 2 4 6 8 10 0.01 0.1 1 10

Average Forward Current (A) Pulse Train Duration (s)

Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current

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100 1.4
Instantaneous Forward Current (A)

10ETF..S Series 10ETF..S Series

1.2 TJ = 25 °C IFM = 20 A

Recovery Charge (µC)

Qrr - Typiacl Reverse
1.0
IFM = 10 A
TJ = 150 °C
0.8
TJ = 25 °C
10
0.6 IFM = 5 A

0.4 IFM = 2 A

0.2
IFM = 1 A
1 0
0.5 1.0 1.5 2.0 2.5 3.0 0 40 80 120 160 200

Instantaneous Forward Voltage (V) dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 7 - Forward Voltage Drop Characteristics Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C

0.40 2.5
10ETF..S Series 10ETF..S Series IFM = 20 A
TJ = 25 °C TJ = 150 °C
2.0

Recovery Charge (µC)

Qrr - Typiacl Reverse
Recovery Time (µs)

0.30
trr - Typiacl Reverse

IFM = 20 A IFM = 10 A

IFM = 10 A 1.5
0.20 IFM = 8 A
IFM = 5 A
1.0
IFM = 5 A
IFM = 2 A
0.10
IFM = 2 A 0.5
IFM = 1 A
IFM = 1 A
0 0
0 40 80 120 160 200 0 40 80 120 160 200

dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C

0.4 15
10ETF..S Series 10ETF..S Series
TJ = 150 °C TJ = 25 °C IFM = 20 A
12
Recovery Current (A)

IFM = 10 A
Recovery Time (µs)

0.3
trr - Typiacl Reverse

Irr - Typiacl Reverse

9 IFM = 5 A
IFM = 20 A
0.2
IFM = 2 A
IFM = 10 A 6
IFM = 5 A
IFM = 1 A
0.1
IFM = 2 A 3

IFM = 1 A
0 0
0 40 80 120 160 200 0 40 80 120 160 200

dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C Fig. 12 - Recovery Current Characteristics, TJ = 25 °C

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 VS-10ETF02S-M3, VS-10ETF04S-M3, VS-10ETF06S-M3 Series
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20
10ETF..S Series IFM = 20 A
TJ = 150 °C
16

Recovery Current (A)

Irr - Typiacl Reverse
IFM = 10 A

12 IFM = 5 A

IFM = 2 A
8
IFM = 1 A
4

0
0 40 80 120 160 200

dI/dt - Rate of Fall of Forward Current (A/µs)

Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
ZthJC - Transient Thermal Impedance (°C/W)

10

Steady state value

0.1 (DC operation)
D = 0.50
D = 0.33
0.01 D = 0.25
D = 0.17
Single pulse D = 0.08 10ETF..S Series

0.001
0.001 0.01 0.1 1 10

Square Wave Pulse Duration (s)

Fig. 14 - Thermal Impedance ZthJC Characteristics

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ORDERING INFORMATION TABLE

Device code VS- 10 E T F 06 S TRL -M3

1 2 3 4 5 6 7 8 9

1 - Vishay Semiconductors product

2 - Current rating (10 = 10 A)
3 - Circuit configuration:
E = single
4 - Package:
T = D2PAK (TO-263AB)
5 - Type of silicon:
F = fast soft recovery rectifier 02 = 200 V
6 - Voltage code x 100 = VRRM 04 = 400 V
06 = 600 V
7 - S = surface mountable
8 - None = tube
TRR = tape and reel (right oriented)
TRL = tape and reel (left oriented)
9 - -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free

ORDERING INFORMATION (Example)

PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-10ETF02S-M3 50 1000 Antistatic plastic tubes
VS-10ETF02STRR-M3 800 800 13" diameter reel
VS-10ETF02STRL-M3 800 800 13" diameter reel
VS-10ETF04S-M3 50 1000 Antistatic plastic tubes
VS-10ETF04STRR-M3 800 800 13" diameter reel
VS-10ETF04STRL-M3 800 800 13" diameter reel
VS-10ETF06S-M3 50 1000 Antistatic plastic tubes
VS-10ETF06STRR-M3 800 800 13" diameter reel
VS-10ETF06STRL-M3 800 800 13" diameter reel

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?96164
Part marking information www.vishay.com/doc?95444
Packaging information www.vishay.com/doc?96424

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 Outline Dimensions
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D2PAK
DIMENSIONS in millimeters and inches

Conforms to JEDEC® outline D2 PAK (SMD-220) B

A Pad layout
(2)(3) A (E)
c2 11.00
E MIN.
(0.43)
A
(3) L1 4
9.65
MIN.
(D1) (3) (0.38)

Detail A
D 17.90 (0.70)
H 15.00 (0.625)
(2)
1 2 3
3.81
MIN.
L2 (0.15)
B B 2.32
MIN.
(0.08)
A
2.64 (0.103)
2 x b2 C E1 (3) 2.41 (0.096)
c
2xb View A - A
0.010 M A M B ± 0.004 M B
2x e
Base
Plating (4) Metal
H b1, b3
Gauge
plane
(c) c1 (4)
0° to 8° B
L Seating
plane
L3 A1
(b, b2)
Lead tip
L4 Section B - B and C - C
Detail “A” Scale: None
Rotated 90 °CW
Scale: 8:1

MILLIMETERS INCHES MILLIMETERS INCHES

SYMBOL NOTES SYMBOL NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3
A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3
b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3
b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3
c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inches
(7) Outline conforms to JEDEC® outline TO-263AB

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