Professional Documents
Culture Documents
6 - Hafta Defects II
6 - Hafta Defects II
slip steps
Adapted from
Fig. 7.9, Callister
6e.
Actual strained
hcp Zn
4
Burgers Circuit
5
Dislocation types
3. Dislocations
3.1 Types and analysis
b glide
edge planes
• b
glide
plane
core with
dislocation screw
line
60° mixed
b
15th International Summer School on Crystal Growth – ISSCG- LAST NAME, First Name – talk
15 id
Edge Dislocations Exiting Crystal Form Steps
Burger’s
Vector = b
Shear stress
The caterpillar or rugmoving analogy
8
http://bibing.us.es/proyectos/abreproy/80016/fichero/chapter+2.pdf
http://academic.uprm.edu/pcaceres/Courses/MatEng/MSE4-1.pdf
Formation of Steps from Screw and Edge Dislocations
Shear stress
Edge
Shear stress
Screw
Both screw and edge motion create same steps!
11
Screw Dislocation
b || t
http://people.exeter.ac.uk/jngrima/SOE1032/rmh_q3/dislocations.html
Screw dislocation Mixed dislocation
Free surfaces
Grain boundaries
Area A
Broken Area A
bonds
17
http://www.eng.utah.edu/~lzang/images/lecture-6-grain-boundary-displocation-defects-vancancy.pdf
Grain 2
Grain 1
A grain boundary is a boundary between two
regions of identical crystal structure but
different orientation
High and low angle
boundaries
• It is convenient to separate
grain boundaries by the extent
of the mis-orientation between
the two grains.
Grain
Boundary
Grain 1 Grain 2
Transmission electron micrograph of dislocations
https://en.wikipedia.org/wiki/Dislocation#/media/File:TEM_micrograph_dislocations_precipitate_stainless_steel_1.jpg
Grain Boundary: tilt and
twist
sin~ =b/d
Bi-crystals are made by twist boundaries
29
tilt boundary
twist boundary
https://en.wikipedia.org/wiki/Grain_boundary
http://web.utk.edu/~prack/mse201/Chapter%204%20Defects.pdf
6.
Twinnin Correlation with stacking
fault
g InP
V
S
2D nucleation
with stacked fault
A* = Tc (h H /Tm)
twins in InP (IKZ) A* - reduced work of twinned nucleus
at
stacking fault energies (x 10-7 J cm-
VLS boundary ~ supercooling Tc
- twin plane energy~ SF !
2)
- melting temperature
Thm - nucleus height,
Si: 100, GaAs: 55, InP: 18, CdTe: 10 H - latent heat
15th International Summer School on Crystal Growth – ISSCG- LAST NAME, First Name – talk
15 id
7.
Summar Defects vs. temperature
15th International Summer School on Crystal Growth – ISSCG- LAST NAME, First Name – talk
15 id
1.
Introducti Defect diagnostics
on
Point defects Dislocations Grain boundaries Inclusions