FMP08N50E FUJI POWER MOSFET

Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET

Features Outline Drawings [mm] Equivalent circuit schematic

Maintains both low power loss and low noise TO-220AB
Lower RDS (on) characteristic
More controllable switching dv/dt by gate resistance
Drain(D)
Smaller VGS ringing waveform during switching
Narrow band of the gate threshold voltage (3.0±0.5V)
High avalanche durability
Applications Gate(G)
Switching regulators Source(S)
UPS (Uninterruptible Power Supply)
DC-DC converters

Maximum Ratings and Characteristics

Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description Symbol Characteristics Unit Remarks
VDS 500 V
Drain-Source Voltage
VDSX 500 V VGS = -30V
Continuous Drain Current ID ±7.5 A
Pulsed Drain Current I DP ±30 A
Gate-Source Voltage VGS ±30 V
Repetitive and Non-Repetitive Maximum Avalanche Current I AR 7.5 A Note*1
Non-Repetitive Maximum Avalanche Energy E AS 301.1 mJ Note*2
Repetitive Maximum Avalanche Energy E AR 3.7 mJ Note*3
Peak Diode Recovery dV/dt dV/dt 5.9 kV/µs Note*4
Peak Diode Recovery -di/dt -di/dt 100 A/µs Note*5
2.02 Ta=25°C
Maximum Power Dissipation PD W
105 Tc=25°C
Tch 150 °C
Operating and Storage Temperature range
Tstg -55 to +150 °C

Electrical Characteristics at Tc=25°C (unless otherwise specified)

Description Symbol Conditions min. typ. max. Unit
Drain-Source Breakdown Voltage BVDSS I D =250µA, VGS =0V 500 - - V
Gate Threshold Voltage VGS (th) I D =250µA, VDS =VGS 2.5 3.0 3.5 V
VDS =500V, VGS =0V Tch =25°C - - 25
Zero Gate Voltage Drain Current I DSS µA
VDS =400V, VGS =0V Tch =125°C - - 250
Gate-Source Leakage Current I GSS VGS =±30V, VDS =0V - 10 100 nA
Drain-Source On-State Resistance R DS (on) I D =3.8A, VGS =10V - 0.68 0.79 Ω
Forward Transconductance gfs I D =3.8A, VDS =25V 4 8 - S
Input Capacitance Ciss VDS =25V - 1100 1650
Output Capacitance Coss VGS =0V - 100 150 pF
Reverse Transfer Capacitance Crss f=1MHz - 7.5 11
td(on) Vcc =300V - 17 26
Turn-On Time
tr VGS =10V - 8.0 12
ns
td(off) I D =3.8A - 80 120
Turn-Off Time
tf RGS =18Ω - 15 23
Total Gate Charge QG Vcc =250V - 35 53
Gate-Source Charge Q GS I D =7.5A - 9.0 14 nC
Gate-Drain Charge Q GD VGS =10V - 10 15
Avalanche Capability I AV L=3.93mH, Tch=25°C 7.5 - - A
Diode Forward On-Voltage VSD I F =7.5A, VGS =0V, Tch =25°C - 0.90 1.35 V
Reverse Recovery Time trr I F =7.5A, VGS =0V - 0.35 - µs
Reverse Recovery Charge Qrr -di/dt=100A/µs, Tch=25°C - 3.5 - µC

Thermal Characteristics
Description Symbol Test Conditions min. typ. max. Unit
Rth (ch-c) Channel to Case 1.19 °C/W
Thermal resistance
Rth (ch-a) Channel to Ambient 62.0 °C/W
Note *1 : Tch≤150°C Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
Note *2 : Stating Tch=25°C, IAS =3.0A, L=61.3mH, Vcc=50V, RG =50Ω See to the 'Transient Themal impeadance' graph.
E AS limited by maximum channel temperature and avalanche current. Note *4 : I F ≤-I D, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C.
See to 'Avalanche Energy' graph. Note *5 : I F ≤-I D, dv/dt=5.9kV/µs, Vcc≤BVDSS, Tch≤150°C.

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FMP08N50E FUJI POWER MOSFET

Allowable Power Dissipation Safe Operating Area

PD=f(Tc) ID=f(VDS):Duty=0(Single pulse),Tc=25 °c
150
t=
1µs
1
125 10 10µs

100µs
100 0
10

1ms
PD [W]

75

ID [A]
-1
10

50
Power loss waveform :
Square waveform
-2 D.C.
10
25 PD

-3
0 10
0 25 50 75 100 125 150 10
0
10
1 2
10
3
10
VDS [V]
Tc [°C]

Typical Output Characteristics Typical Transfer Characteristic

ID=f(VDS):80 µs pulse test,Tch=25 °C ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C
18
10V
16 10
6.0V

14 5.5V

12

10
ID[A]
ID [A]

1
8 5.0V

VGS=4.5V
2 0.1

0
0 4 8 12 16 20 24 0 1 2 3 4 5 6 7 8 9 10
VDS [V] VGS[V]

Typical Transconductance Typical Drain-Source on-state Resistance

gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C RDS(on)=f(ID):80 µs pulse test,Tch=25 °C
100 VGS=4.5V 5.0V
2.4

2.2

2.0

10 1.8
RDS(on) [ Ω ]

1.6
gfs [S]

5.5V
1.4
6.0V
1.2 10V
1

1.0

0.8

0.6
0.1
0.1 1 10 100 0 2 4 6 8 10 12 14 16 18
ID [A] ID [A]

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FMP08N50E FUJI POWER MOSFET

Drain-Source On-state Resistance Gate Threshold Voltage vs. Tch

RDS(on)=f(Tch):ID=3.8A,VGS=10V VGS(th)=f(Tch):VDS=VGS,ID=250µA
2.5 6

5
2.0

VGS(th) [V]
1.5
max.
RDS(on) [ Ω ]

3
typ.

1.0 max. min.

2
typ.

0.5
1

0.0 0
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
Tch [°C] Tch [°C]

Typical Gate Charge Characteristics Typical Capacitance

VGS=f(Qg):ID=7.5A,Tch=25 °C C=f(VDS):VGS=0V,f=1MHz
4
14 10

12
Vcc= 100V Ciss
3
250V 10
10 400V

8
C [pF]
VGS [V]

2
10
6 Coss

4
1
10

2 Crss

0
0 10
0 5 10 15 20 25 30 35 40 45 50 -1
10
0
10 10
1
10
2
10
3

Qg [nC] VDS [V]

Typical Forward Characteristics of Reverse Diode Typical Switching Characteristics vs. ID

IF=f(VSD):80 µs pulse test,Tch=25 °C t=f(ID):Vcc=300V,VGS=10V,RG=18 Ω
3
100 10

tf

td(off)
2
10 10
IF [A]

t [ns]

td(on)
1
1 10
tr

0
0.1 10
-1 0 1
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 10 10 10
VSD [V] ID [A]

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FMP08N50E FUJI POWER MOSFET

Maximum Avalanche Energy vs. starting Tch Maximum Transient Thermal Impedance
E(AV)=f(starting Tch):Vcc=50V,I(AV)<=7.5A Zth(ch-c)=f(t):D=0
350 10
1

IAS=3.0A
300
0
10

250

Zth(ch-c) [°C/W]
IAS=4.5A -1
10
200
EAV [mJ]

150
-2
IAS=7.5A 10

100

-3
10
50 -6
10 10
-5
10
-4
10
-3 -2
10 10
-1
10
0

t [sec]

0
0 25 50 75 100 125 150
starting Tch [°C]

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FMP08N50E FUJI POWER MOSFET

WARNING

1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.

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