2SC5100

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1908) Application : Audio and General Purpose

■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol 2SC5100 Unit Symbol Conditions 2SC5100 Unit

0.8±0.2
15.6±0.2 5.5±0.2

VCBO 160 V ICBO VCB=160V 10max µA 3.45 ±0.2

µA

5.5
9.5±0.2
VCEO 120 V IEBO VEB=6V 10max
VEBO V(BR)CEO 120min V

23.0±0.3
6 V IC=50mA
ø3.3±0.2
IC 8 A hFE VCE=4V, IC=3A 50min∗ a

1.6
IB VCE(sat) 0.5max V b
3 A IC=3A, IB=0.3A

3.0
PC 75(Tc=25°C) fT VCE=12V, IE=–0.5A 20typ MHz

3.3
W
Tj 150 °C COB VCB=10V, f=1MHz 200typ pF 1.75 0.8

16.2
2.15
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2
-0.1

5.45±0.1 5.45±0.1 0.65 +0.2

-0.1 3.35
■Typical Switching Characteristics (Common Emitter)
1.5 4.4 1.5
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 6.5g
(V) (Ω) (A) (V) (V) (A) (A) (µs) (µs) (µs) a. Type No.
40 10 4 10 –5 0.4 –0.4 0.13typ 3.50typ 0.32typ B C E b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sat ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

(V C E =4V)
8 3 8
Collector-Emitter Saturation Voltage V C E (s at) (V )

A
A

A
0m 00m
0m
350m

15 1
20

75 m A

6 6

Collector Current I C (A)

Collector Current I C (A)

2
50m A

4 4

mp)

)
mp)

Temp
e Te
20mA

e Te
1

Cas

(Case
(Cas
2 2

˚C (

–30˚C
25˚C
125
I B =10mA
I C =8A
4A
2A
0 0 0
0 1 2 3 4 0 0.2 0.4 0.6 0.8 1.0 0 0.5 1.0 1.5
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚C/W)

(V C E =4V) (V C E =4V)
200 200 4
125˚C
DC C urrent G ain h FE

DC Curr ent Gain h FE

Transient Thermal Resistance

Typ
100 100 25˚C

1
–30˚C
50 50
0.5

20 20 0.2
0.02 0.1 0.5 1 5 8 0.02 0.1 0.5 1 5 8 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =12V)
40 20 80

10
Ma xim um Powe r Dissipation P C ( W)
10
m
10

s
0m

30 DC 60
Cut -off Fre quen cy f T (MH Z )

5
W
s

ith
Collecto r Cur ren t I C (A)

Typ
In
fin
ite
he

20
at

40
si

1
nk

0.5
10 Without Heatsink 20
Natural Cooling

Without Heatsink
3.5
0 0.1 0
–0.02 –0.1 –1 –8 5 10 50 100 150 0 25 50 75 100 125 150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)

126
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