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IXGQ90N33
IXGQ90N33
IXGQ90N33
VGEM ±30 V
Applications
• PDP Screen Drivers
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
Cies 2320 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 180 pF
Cres 21 pF
Qg(on) 69 nC
Qge IC = 45A, VGE = 15V, VCE = 0.5 • VCES 15 nC
Qgc 13 nC
td(on) 13 ns
tri Resistive load, TJ = 25°°C 30 ns
td(off) IC = 45A, VGE = 15V 38 ns
tfi VCE = 240V, RG = 5Ω 49 ns
td(on) 13 ns
Resistive load, TJ = 125°°C
tri 28 ns
IC = 45A, VGE = 15V
td(off) 50 ns
VCE = 240V, RG = 5Ω
tfi 74 ns
Protection Diode
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
IXGQ90N33TCD4
Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics
@ 25ºC @ 25ºC
90 300
VGE = 15V
80 13V 270
VGE = 15V
11V
9V 240 13V
70
11V
210
60
IC - Amperes
IC - Amperes
180
50 9V
7V 150
40
120
30
90
20 60 7V
10 30
0 0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 1 2 3 4 5 6 7 8 9 10
VCE - Volts VCE - Volts
1.2
60
IC - Amperes
50 1.1
7V I C = 45A
40 1
30
0.9
20
I C = 23A
0.8
10 5V
0 0.7
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 -50 -25 0 25 50 75 100 125 150
VCE - Volts TJ - Degrees Centigrade
3.0 TJ = 25ºC
120
2.8
2.6 100
IC - Amperes
I C = 90A
TJ = 125ºC
VCE - Volts
1.8 40
1.6
20
1.4
1.2 0
5 6 7 8 9 10 11 12 13 14 15 4 4.5 5 5.5 6 6.5 7 7.5
VGE - Volts VGE - Volts
60
10
VGE - Volts
50
125ºC
8
40
6
30
4
20
10 2
0 0
0 20 40 60 80 100 120 140 0 10 20 30 40 50 60 70
I C - Amperes QG - NanoCoulombs
70
1,000
IC - Amperes
60
50 C oes
40
100
30
TJ = 150ºC
20
RG = 20Ω Cres
10 dV / dT < 10V / ns
0 10
50 100 150 200 250 300 350 0 5 10 15 20 25 30 35 40
VCE - Volts VCE - Volts
VCE(sat) Limit
100
Z(th)JC - ºC / W
IC - Amperes
1µs
0.10
10µs
10
100µs
TJ = 150ºC
1ms
TC = 25ºC
Single Pulse
1 0.01
1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10
t r - Nanoseconds
TJ = 25ºC
31 31
30
30
I C = 90A
29
29
28
28 27
26 TJ = 125ºC
27
I C = 45A 25
26
24
25 23
25 35 45 55 65 75 85 95 105 115 125 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90
Fig. 15. Resistive Turn-on Switching Times Fig. 16. Resistive Turn-off Switching Times
vs. Gate Resistance vs. Junction Temperature
75 24 95 60
70 tr td(on) - - - - 23 90 tf td(off) - - - - 57
65 TJ = 125ºC, VGE = 15V 22 RG = 5Ω, VGE = 15V
85 54
VCE = 240V VCE = 240V
t
t
60 21
d(off)
d(on)
80 51
t r - Nanoseconds
t f - Nanoseconds
55 20
50 19 75 48
- Nanoseconds
- Nanoseconds
I C = 90A, 45A
45 18 70 45
I C = 90A, 45A
40 17 65 42
35 16
60 39
30 15
55 36
25 14
20 13 50 33
15 12 45 30
4 6 8 10 12 14 16 18 20 25 35 45 55 65 75 85 95 105 115 125
RG - Ohms TJ - Degrees Centigrade
Fig. 17. Resistive Turn-off Switching Times Fig. 18. Resistive Turn-off Switching Times
vs. Collector Current vs. Gate Resistance
120 60 120 130
tf td(off) - - - - tf td(off) - - - -
110 57 115 120
RG = 5Ω, VGE = 15V TJ = 125ºC, VGE = 15V
100 54 110 VCE = 240V 110
TJ = 125ºC VCE = 240V
t
t
d(off)
d(off)
90 51 105 100
t f - Nanoseconds
t f - Nanoseconds
I C = 45A
80 48 100 90
- Nanoseconds
- Nanoseconds
70 45 95 80
60 42 90 I C = 90A 70
50 39 85 60
TJ = 25ºC
40 36 80 50
30 33 75 40
20 30 70 30
20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 4 6 8 10 12 14 16 18 20
IC - Amperes RG - Ohms