PD-94640 RevH

IRAMS10UP60A

www.irf.com 1
RevH,.011508
IRAMS10UP60A
Internal Electrical Schematic - IRAMS10UP60A
V+ (10)

VRU (12)

VRV (13)

VRW (14)

Rg1 Rg3 Rg5

VB1 (7)
U, VS1 (8)

VB2 (4)
V, VS2 (5)

VB3 (1)
W, VS3 (2)

22 21 20 19 18 17 Rg2
23 VS1 VB2 HO2 VS2 VB3 HO3 VS3 LO1 16
24 HO1 Rg4
R3 LO2 15
25 VB1
1 VCC Rg6
Driver IC LO3 14
HIN1 (15) 2 HIN1
HIN2 (16) 3 HIN2
HIN3 (17) 4 HIN3
LIN2 LIN3 F ITRIP EN RCIN VSS COM
LIN1 (18) 5 LIN1 6 7 8 9 10 11 12 13

LIN2 (19)
LIN3 (20) R1
T/ITRIP (21) R2
RT THERMISTOR

C
VDD (22)

VSS (23)

2 www.irf.com
 IRAMS10UP60A
Inverter Section Electrical Characteristics @ TJ = 25°C
Symbol Parameter Min Typ Max Units Conditions
Collector-to-Emitter Breakdown
V(BR)CES 600 --- --- V VIN=0V, IC=20µA
Voltage
Temperature Coeff. Of VIN=0V, IC=1.0mA
∆V(BR)CES / ∆T --- 0.57 --- V/°C
Breakdown Voltage (25°C - 150°C)
Collector-to-Emitter Saturation --- 1.7 2.0 IC=5A TJ=25°C, VDD=15V
VCE(ON) V
Voltage --- 2.0 2.4 IC=5A TJ=150°C
Zero Gate Voltage Collector --- 5 15 VIN=5V, V+=600V
ICES µA
Current-to-Emitter --- 10 40 VIN=5V, V+=600V, TJ=150°C
Zero Gate Phase-to-Phase
Ilk_module -- -- 50 µA VIN=5V, V+=600V
Current
--- 1.8 2.35 IC=5A
VFM Diode Forward Voltage Drop V
--- 1.3 1.7 IC=5A, TJ=150°C

Inverter Section Switching Characteristics

Symbol Parameter Min Typ Max Units Conditions
Eon Turn-On Switching Loss --- 200 235 IC=5A, V+=400V
Eoff Turn-Off Switching Loss --- 75 100 µJ VDD=15V, L=1mH
Etot Total Switching Loss --- 275 335 TJ=25°C
See CT1
Eon Turn-on Swtiching Loss --- 300 360 TJ=150°C
Eoff Turn-off Switching Loss --- 135 165 µJ Energy losses include "tail" and
Etot Total Switching Loss --- 435 525 diode reverse recovery
Diode Reverse Recovery
Erec --- 30 40 µJ TJ=150°C, V+ =400V VDD=15V,
energy
IF=5A, L=1mH
trr Diode Reverse Recovery time --- 100 145 ns
TJ=150°C, IC=5A, VP=600V
Reverse Bias Safe Operating
RBSOA FULL SQUARE V+=480V, VDD=+15V to 0V
Area
See CT3
TJ=150°C, VP=600V,
Short Circuit Safe Operating
SCSOA 10 --- --- µs V+=360V,
Area
VDD=+15V to 0V See CT2

Thermal Resistance
Symbol Parameter Min Typ Max Units Conditions
Junction to case thermal
Rth(J-C) resistance, each IGBT under --- 4.2 4.7 °C/W
inverter operation.
Flat, greased surface.
Junction to case thermal Heatsink compound thermal
Rth(J-C) resistance, each Diode under --- 5.5 6.5 °C/W conductivity - 1W/mK
inverter operation.
Thermal Resistance case to
Rth(C-S) --- 0.1 --- °C/W
sink

www.irf.com 3
IRAMS10UP60A
Absolute Maximum Ratings Driver Function
Absolute Maximum Ratings indicate substaines limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to VSS (Note 1)

Symbol Definition Min Max Units

VS1,2,3 High Side offset voltage -0.3 600 V
VB1,2,3 High Side floating supply voltage -0.3 20 V
VDD Low Side and logic fixed supply voltage -0.3 20 V
VIN Input voltage LIN, HIN, T/ITRIP -0.3 7 V
TJ Juction Temperature -40 150 °C

Recommended Operating Conditions Driver Function

The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. All voltages are absolute referenced to VSS. The VS offset is tested with all supplies biased
at 15V differential (Note 1). All input pin (VIN ) and ITRIP are clamped with a 5.2V zener diode and pull-up resistor to
VDD

Sym bol Definition Min Max Units

VB1,2,3 High side floating supply voltage VS+12 VS+20
V
VS1,2,3 High side floating supply offset voltage Note 2 450
VDD Low side and logic fixed supply voltage 12 20
V
VITRIP T/ITRIP input voltage VSS VSS+5
VIN Logic input voltage LIN, HIN VSS VSS+5 V

Static Electrical Characteristics Driver Function

VBIAS (VCC, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to VSS and are appli-
cable to all six channels. (Note 1)

Symbol Definition Min Typ Max Units

VIN,th+ Positive going input threshold 3.0 --- --- V
VIN,th- Negative going input threshold --- --- 0.8 V
VCCUV+ VCC and VBS supply undervoltage
10.6 11.1 11.6 V
VBSUV+ Positive going threshold
VCCUV- VCC and VBS supply undervoltage
10.4 10.9 11.4 V
VBSUV- Negative going threshold
VCCUVH VCC and VBS supply undervoltage
--- 0.2 --- V
VBSUVH Ilockout hysteresis
IQBS Quiescent VBS supply current --- 70 120 µA
IQCC Quiscent VCC supply current --- 1.6 2.3 mA
ILK Offset Supply Leakage Current --- --- 50 µA
IIN+ Input bias current (OUT=LO) --- 100 220 µA
IIN+ Input bias current (OUT=HI) --- 200 300 µA
V(ITRIP) ITRIP threshold Voltage (OUT=HI or OUT=LO) 3.85 4.3 4.75 V

4 www.irf.com
 IRAMS10UP60A
Dynamic Electrical Characteristics
VDD=VBS=VBIAS=15V, Io=1A, VD=9V, PWMIN=2kHz, VIN_ON=VIN_th+, VIN_OFF=VIN_th-
TA=25°C, unless otherwise specified

Symbol Definition Min Typ Max Units

TON Input to output propagation turn-on delay time (see fig.11) - 470 - ns
TOFF Input to output propagation turn-off delay time (see fig. 11) - 615 - ns
DT Dead Time - 300 - ns
I/TTrip T/ITrip to six switch to turn-off propagation delay (see fig. 2) - 750 - ns
TFCLTRL Post ITrip to six switch to turn-off clear time (see fig. 2) - 9 - ms

Internal NTC - Thermistor Characteristics

Parameter Typ Units Conditions
R25 Resistance 100 +/- 5% kΩ TC = 25°C
R125 Resistance 2.522 + 17.3 % /- 14.9% kΩ TC = 125°C
B B-Constant (25-50°C) 4250 +/- 3% k R2 = R1e [B(1/T2 - 1/T1)]
Temperature Range -40 / 125 °C
Typ. Dissipation constant 1 mW/°C TC = 25°C

Note 1: For more details, see IR21365 data sheet

Note 2: Logic operational for Vs from V--5V to V-+600V. Logic stata held for VS from V--5V to V--VBS. (Please refer to
DT97-3 for more details)

Thermistor Built-in IRAMS10UP60A

VCC (22)

NTC

IR21365
12K
T/ITRIP (21)

4.3k
VSS (23)

Note 3: The Maximum recommended sense voltage at the T/ITRIP terminal under normal operating conditions is 3.3V.

www.irf.com 5
IRAMS10UP60A
Figure1. Input/Output Timing Diagram

HIN1,2,3

LIN1,2,3

HO1,2,3

LO1,2,3

Itrip

U,V,W

Note 4: The shaded area indicates that both high-side and low-side switches are off and therefore the half-
bridge output voltage would be determined by the direction of current flow in the load.

V+ HIN1,2,3 LIN1,2,3
Itrip U,V,W
0 0 1 Vbus
0 1 0 0
0 1 1 X
Ho 1 X X X
Hin1,2,3
(15,16,17) U,V,W
IC
Driver (8,5,2)

Lin1,2,3
Lo
(18,19,20)

6 www.irf.com
 IRAMS10UP60A
Figure 2. T/ITrip Timing Waveform

HIN1,2,3

LIN1,2,3

50%
T/Itrip

U,V,W 50%

tfltclr

Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the half-
bridge output voltage would be determined by the direction of current flow in the load.

www.irf.com 7
IRAMS10UP60A
Module Pin-Out Description

Pin Name Description

1 VB3 High Side Floating Supply Voltage 3
2 W,VS3 Output 3 - High Side Floating Supply Offset Voltage
3 na none
4 VB2 High Side Floating Supply voltage 2
5 V,VS2 Output 2 - High Side Floating Supply Offset Voltage
6 na none
7 VB1 High Side Floating Supply voltage 1
8 U,VS1 Output 1 - High Side Floating Supply Offset Voltage
9 na none
10 V+ Positive Bus Input Voltage
11 na none
12 LE1 Low Side Emitter Connection - Phase 1
13 LE2 Low Side Emitter Connection - Phase 2
14 LE3 Low Side Emitter Connection - Phase 3
15 HIN1 Logic Input High Side Gate Driver - Phase 1
16 HIN2 Logic Input High Side Gate Driver - Phase 2
17 HIN3 Logic Input High Side Gate Driver - Phase 3
18 LIN1 Logic Input Low Side Gate Driver - Phase 1
19 LIN2 Logic Input Low Side Gate Driver - Phase 2
20 LIN3 Logic Input Low Side Gate Driver - Phase 3
21 T/Itrip Temperature Monitor and Shut-down Pin
22 VCC +15V Main Supply
23 VSS Negative Main Supply

8 www.irf.com
 IRAMS10UP60A
Typical Application Connection IRAMS10UP60A

VB W

VSW
U
BOOT-STRAP
CAPACITORS V BV
3-ph AC V
MOTOR VSV

CURRENT SENSING CAN USE A W VB U

SINGLE SENSE RESISTOR OR PHASE
LEG SENSING AS SHOWN VSU

V+
DC BUS
CAPACITORS
LeU

PHASE LEG LeV

CURRENT
LeW
SENSE
HINU

HINV

HINW Driver IC
CONTROLLER LINU

LINV

LINW

T/ITRIP
5k
TEMP
6.8K VDD(15 V)
SENSE 1m
3.3 V VSS
10.2k NTC
10m 0.1 12k
m

O/C
SENSE
(ACTIVE LOW)

1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and
EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve perfor-
mance.
2. In order to provide good decoupling between VCC-Gnd and VB-VSS terminals, the capacitors shown connected be-
tween these terminals should be located very close to the module pins. Additional high frequency capacitors, typically
0.1µF, are strongly recommended.
3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on
IR design tip DN 98-2a, application note AN-1044 or Figure 9.
4. Low inductance shunt resistors shuld be used for phase leg current sensing. Similarly, the length of the traces be-
tween pins 12, 13 and 14 to the corrisponding shunt resistors should be kept as small as possible.
5. Over-current sense signal can be obtained from external hardware detecting excessive instantaneous current in in-
verter.

www.irf.com 9
IRAMS10UP60A
10
Maximum RMS Output Current/Phase (A).

9
Tc=100°C
8 Tc=110°C
7 Tc=120°C

5
4

0
0 2 4 6 8 10 12 14 16 18 20
PWM Switching Frequency (kHz)

Figure 3. Maximum sinusoidal phase current as function of switching frequency

VBUS=400V, Tj=150°C, Modulation Depth=0.8, PF=0.6

7
Switching Frequency:
6
12 kHz
Maximum RMS Phase Current (A).

16 kHz
5 20 kHz

0
1 10 100
Motor Current Modulation Frequency (Hz)

Figure 4. Maximum sinusoidal phase current as function of modulation frequency

VBUS=400V, Tj=150°C, Tc=100°C, Modulation Depth=0.8, PF=0.6

10 www.irf.com
 IRAMS10UP60A
9 450

8 Current 400
Voltage
7 350

6 300
5 250

Voltage (V)
Current (A)

4 200
3 150

2 100

1 50

0 0

-1 -50
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Time (µs)

Figure 5. IGBT Turn-on. Typical turn-on waveform @Tj=125°C, VBUS=400V

9 450

8 400

7 350

6 Current 300
Voltage
5 250
Voltage (V)
Current (A)

4 200

3 150

2 100

1 50

0 0

-1 -50
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Time (µs)

Figure 6. IGBT Turn-off. Typical turn-off waveform @Tj=125°C, VBUS=400V

www.irf.com 11
IRAMS10UP60A
1000

Minimum
Thermistor Resistance (k_Ω )

100 Nominal
Maximum

10

1
0 20 40 60 80 100 120 140
Temperature (°C)
Figure 7. Variation of thermistor resistance with temperature

Maximum
V sense (V) .

Nominal
2
Minimum

0
0 20 40 60 80 100 120 140
Thermistor Temperature (°C)

Figure 8. Variation of temperature sense voltage with thermistor tempera-

ture using external bias resistance of 4.3KΩ, VCC=15V

12 www.irf.com
 IRAMS10UP60A
180

160
IGBT Junction Temperature (°C).

140

120

100

80

60
80 90 100 110 120 130 140 150
Thermistor Temperature (°C)
Figure 9. Estimated maximum IGBT junction temperature with thermistor
temperature

20

17.5
15
15

12.5
Capacitance (µF)

10
6.8
7.5
4.7
5
3.3
2.2
2.5

0
0 1.5 3 4.55 6 7.5 9 10 10.5 12 13.5 1515 16.5 18 19.5
20
Switching Frequency (kHz)
Figure 10. Recommended minimum Bootstrap Capacitor value Vs Switching
Frequency

www.irf.com 13
IRAMS10UP60A
Figure 11. Switching Parameter Definitions

VCE IC IC VCE

90% IC
50%
HIN/LIN
90% IC
50% HIN/LIN
HIN/LIN
HIN/LIN
10%
VCE
10% IC
10% IC

TON tr TOFF tf

Figure 11a. Input to Output propaga- Figure 11b. Input to Output

tion turn-on delay time propagation turn-off delay timet

IF

VCE

HIN/LIN

Irr

trr

Figure 11c. Diode Reverse Recovery

14 www.irf.com
 IRAMS10UP60A
Vbus

5V

Ho

Hin1,2,3
IC
Driver U,V,W

Lo
Lin1,2,3

Figure CT1. Switching Loss Circuit

Vbus

Ho IN PWM=4µs
Hin1,2,3
1k 10k
VCC IC
Io
Driver U,V,W
Lin1,2,3
5VZD
Lo VP=Peak Voltage on the IGBT die
IN
Io

Figure CT2. S.C.SOA Circuit

Vbus

Hin1,2,3 Ho IN
1k 10k
VCC IC
Driver U,V,W Io

5VZD Lin1,2,3 Lo
IN VP=Peak Voltage on the IGBT die
Io

Figure CT3. R.B.SOA Circuit

www.irf.com 15
IRAMS10UP60A
Package Outline
note 2 note 3

027-E2D24

note 1

Standard pin leadforming option

Notes:
Dimensions in mm
1 - Marking for pin 1 identification
2- Product Part Number
3- Lot and Date code marking

For mounting instruction see AN-1049

16 www.irf.com
 IRAMS10UP60A
Package Outline
note 3
note 2

027-E2D24

note 1

Pin leadforming option -2

Notes:
Dimensions in mm
1 - Marking for pin 1 identification
2- Product Part Number
3- Lot and Date code marking

Data and Specifications are subject to change without notice

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
Rev.H, 01/08

www.irf.com 17