AP4435D

Advanced Power P-CHANNEL ENHANCEMENT MODE

Electronics Corp. POWER MOSFET

▼ Low On-resistance D
D BVDSS -30V
▼ Fast Switching Speed D
D
RDS(ON) 20mΩ
▼ PDIP-8 Package ID -9A
G
PDIP-8 S
S
S
Description
D
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, lower on-resistance and
cost-effectiveness. G
S

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage - 30 V
VGS Gate-Source Voltage ±20 V
3
ID@TA=25℃ Continuous Drain Current -9 A
3
ID@TA=70℃ Continuous Drain Current - 5.8 A
1
IDM Pulsed Drain Current - 50 A
PD@TA=25℃ Total Power Dissipation 2.5 W
Linear Derating Factor 0.02 W/℃
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Unit
3
Rthj-a Thermal Resistance Junction-ambient Max. 50 ℃/W

Data and specifications subject to change without notice 201114031

AP4435D

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V
ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.03 - V/℃
RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-9A - - 20 mΩ
VGS=-4.5V, ID=-5A - - 35 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V
gfs Forward Transconductance VDS=-10V, ID=-9A - 8.2 - S
o
IDSS Drain-Source Leakage Current (Tj=25 C) VDS=-30V, VGS=0V - - -1 uA
o
Drain-Source Leakage Current (Tj=70 C) VDS=-24V, VGS=0V - - -25 uA
IGSS Gate-Source Leakage VGS= ± 20V - - ±100 nA
2
Qg Total Gate Charge ID=-9.0A - 26 42 nC
Qgs Gate-Source Charge VDS=-24V - 6 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 16 - nC
2
td(on) Turn-on Delay Time VDS=-15V - 14 - ns
tr Rise Time ID=-1A - 13 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 70 - ns
tf Fall Time RD=15Ω - 48 - ns
Ciss Input Capacitance VGS=0V - 1330 2100 pF
Coss Output Capacitance VDS=-25V - 580 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 160 - pF

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=-9.0A, VGS=0V - - -1.2 V
trr Reverse Recovery Time IS=-9.0A, VGS=0V, - 44 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 70 - nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Mounted on min. copper pad , t <10sec.
 AP4435D

100 80

-10V o -10V
T A =25 o C T A =150 C
-8.0V -8.0V
80
60

-ID , Drain Current (A)

-ID , Drain Current (A)

-6.0V
60
-6.0V
40

40

-4.5V 20
-4.5V
20

V G =-4.0V V G = - 4.0V
0 0
0 1 2 3 4 5 6 7 0 1 2 3 4 5 6

-V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

40 1.8

I D = - 5.0 A
1.6
I D =-9.0A
35 T A =25 o C
V GS =-10V
Normalized RDS(ON)

1.4
RDS(ON) (mΩ )

30

1.2

25

1.0

20
0.8

15 0.6
3 5 7 9 11 -50 0 50 100 150

-V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
8 2.5

7
2.25

2
-VGS(th) (V)

5
-IS(A)

4 1.75

T j =150 o C T j =25 o C
3
1.5

1.25
1

0 1
0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150

-V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature
AP4435D
f=1.0MHz
12 10000

I D =-9.0A
V DS =-24V
10
-VGS , Gate to Source Voltage (V)

C (pF)
Ciss
6 1000

Coss
4

Crss
0 100
0 10 20 30 40 50 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1
Normalized Thermal Response (Rthja)

Duty factor=0.5

10
1ms 0.2

0.1 0.1

10ms 0.05
-ID (A)

1
0.02
100ms
0.01
PDM

0.01 t
1s Single Pulse
T
o
0.1
T A =25 C
Duty factor = t/T
Single Pulse Peak Tj = PDM x Rthja + Ta
DC Rthja=90oC/W

0.01 0.001
0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000

-V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance

VDS VG
90%
QG
-4.5V

QGS QGD

10%
VGS

td(on) tr td(off)tf Charge Q

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform