Assignment Electronics

1. The outermost orbit of an atom can have a maximum of .............. electrons.

(a) 8 (b) 6 (c) 4 (d) 3

2. When the outermost orbit of an atom has less than 4 electrons, the material is generally a
..............
(a) non-metal (b) metal
(c) semiconductor (d) none of above

3. The valence electrons have ..............

(a) very small energy
(b) least energy
(c) maximum energy
(d) none of the above

4. A large number of free electrons exist in..............

(a) semiconductors (b) metals
(c) insulators (d) non-metals

5. An ideal voltage source has .............. internal resistance.

(a) small (b) large
(c) infinite (d) zero

6. An ideal current source has .............. internal resistance.

(a) infinite (b) zero
(c) small (d) none of the above

7. Maximum power is transferred if load resistance is equal to .......... of the source.

(a) half the internal resistance
(b) internal resistance
(c) twice the internal resistance
(d) none of the above

8. Efficiency at maximum power transfer is

(a) 75% (b) 25% (c) 90% (d) 50%

9. When the outermost orbit of an atom has exactly 4 valence electrons, the material is generally
..............
(a) a metal (b) a non-metal
(c) a semiconductor (d) an insulator

10. Thevenin’s theorem replaces a complicated circuit facing a load by an ..............

(a) ideal voltage source and parallel resistor

(b) ideal current source and parallel resistor
(c) ideal current source and series resistor
(d) ideal voltage source and series resistor

11. The output voltage of an ideal voltage source is ..............

(a) zero
(b) constant
(c) dependent on load resistance
(d) dependent on internal resistance

12. The current output of an ideal current source is ..............

(a) zero
(b) constant
(c) dependent on load resistance
(d) dependent on internal resistance
13. Norton’s theorem replaces a complicated circuit facing a load by an ..............
(a) ideal voltage source and parallel resistor
(b) ideal current source and parallel resistor
(c) ideal voltage source and series resistor
(d) ideal current source and series resistor

14. The practical example of ideal voltage source is ..............

(a) lead-acid cell (b) dry cell
(c) Daniel cell (d) none of the above

15. The speed of electrons in vacuum is .............. than in a conductor.

(a) less (b) much more (c) much less (d) none of the above

16. Maximum power will be transferred from a source of 10 resistance to a load of

(a) 5 (b) 20 (c) 10 (d) 40

17. When the outermost orbit of an atom has more than 4 electrons, the material is generally a
..............
(a) metal (b) non-metal
(c) semiconductor (d) none of the above

18. An ideal source consists of 5 V in series with 10 k resistance. The current magnitude of
equivalent current source is
(a) 2 mA (b) 3.5 mA (c) 0.5 mA (d) none of the above

19. To get Thevenin voltage, you have to

(a) short the load resistor
(b) open the load resistor
(c) short the voltage source
(d) open the voltage source

20. To get the Norton current, you have to

(a) short the load resistor
(b) open the load resistor
(c) short the voltage source
(d) open the voltage source
21. The open-circuited voltage at the terminals of load RL in a network is 30 V. Under the
conditions of maximum power transfer, the load voltage will be ..............
(a) 30 V (b) 10 V (c) 5 V (d) 15 V
22. Under the conditions of maximum power transfer, a voltage source is delivering a power of 30
W to the load. The power produced by the source is ..............
(a) 45 W (b) 60 W (c) 30 W (d) 90 W
23. The maximum power transfer theorem is used in ..............
(a) electronic circuits
(b) power system
(c) home lighting circuits
(d) none of the above
24. The Norton resistance of a network is 20 and the shorted-load current is 2 A. If the network is
loaded by a resistance equal to 20 , the current through the load will be ..............
(a) 2 A (b) 0.5 A (c) 4 A (d) 1 A

25. The Norton current is sometimes called the

(a) shorted-load current
(b) open-load current
(c) Thevenin current
(d) Thevenin voltage
26. Work function of metals is generally measured in ..............
 (a) joules (b) electron-volt
(c) watt-hour (d) watt

27. The operating temperature of an oxidecoated emitter is about ..............

(a) 750ºC (b) 1200ºC
(c) 2300ºC (d) 3650ºC

28. ........... is used in high voltage (> 10 kV) applications.

(a) tungsten emitter
(b) oxide-coated emitter
(c) thoriated-tungsten emitter
(d) none of the above

29. A desirable characteristic of an emitter is that it should have .............. work function.
(a) large (b) very large
(c) small (c) none of the above

30. The thermionic emitter that has the highest operating temperature is ..............
(a) oxide-coated (b) thoriated-tungsten
(c) tungsten (d) none of the above

31. If the temperature of an emitter is increased two times, the electron emission is ..............
(a) increased two times
(b) increased four times
(c) increased several million times
(d) none of the above

32. In X-ray tubes, .............. emitter is used.

(a) thoriated tungsten
(b) tungsten
(c) oxide-coated
(d) none of the above

33. The life of an oxide-coated emitter is about

(a) 500 hours (b) 1000 hours
(c) 200 hours (d) 10,000 hours

34. The electrons emitted by a thermionic emitter are called ..............

(a) free electrons
(b) loose electrons
(c) thermionic electrons
(d) bound electrons
35. The work function of an oxide-coated emitter is about
(a) 1.1 eV (b) 4 eV
(c) 2.63 eV (d) 4.52 eV

36. The warm-up time of a directly heated cathode is ..... that of indirectly heated cathode.
(a) more than (b) less than
(c) sme as (d) data incomplete

37. The most commonly used emitter in the tubes of a radio receiver is ..............
(a) tungsten (b) thoriated-tungsten
(c) oxide-coated (d) none of the above

38. Field emission is utilised in ..............

(a) vacuum tubes
(b) TV picture tubes
(c) gas-filled tubes
(d) mercury pool devices
39. Oxide-coated emitters have electron emission of .............. per watt of heating power.
(a) 5-10 mA (b) 40-90 mA
(c) 50-100 mA (d) 150-1000 mA

40. The oxide-coated cathodes can be used for voltages upto

(a) 1000 V (b) 3000 V
(c) 4000 V (d) 10,000 V
41. A gas diode can conduct ......... the equivalent vacuum diode for the same plate voltage.
(a) less current than
(b) more current than
(c) same current as
(d) none of the above

42. A gas-filled tube has ........ resistance before ionisation.

(a) very high (b) small
(c) very small (d) zero
43. The PIV of a hot cathode gas diode is ........ the equivalent vacuum diode.
(a) the same as that of
(b) more than that of
(c) less than that of
(d) none of the above
44. The anode-to-cathode potential of a gasfilled tube at which gas deionises and stops
conduction is called ........potential.
(a) extinction (b) striking
(c) ionising (d) none of the above
45. A thyratron can be used as ........
(a) an oscillator
(b) an amplifier
(c) a controlled switch
(d) none of the above

46. The internal resistance of a gas-filled tube is ........ that of a vacuum tube.
(a) the same as (b) more than
(c) less than (d) none of the above

47. A cold cathode tube is generally used as a

(a) diode (b) triode
(c) tetrode (d) pentode

48. Conduction in a cold cathode tube is started by ........

(a) thermionic emission
(b) secondary emission
(c) natural sources
(d) none of the above

49. The cathode heating time of thermionic gas diode is ........ that of a vacuum diode.
(a) the same as (b) much more than
(c) much less than (d) none of the above
50. The solid state equivalent of thyratron is
(a) FET (b) transistor
(c) SCR (d) crystal diode
51. The solid state equivalent of cold cathode diode is .........
(a) zener diode (b) crystal diode
(c) LED (d) transistor

52. The noise in a gas-filled tube is ........ that in a vacuum tube.

(a) the same as (b) more than
(c) less than (d) none of the above

53. The ionisation potential in a gas diode depends upon ........

 (a) plate current
(b) cathode construction
(c) size of the tube
(d) type and pressure of gas

54. If the gas pressure in a gas-filled diode is increased, its PIV rating ........
(a) remains the same
(b) is increased
(c) is decreased
(d) none of the above

55. Once a thyratron is fired, its control grid ........ over the plate current.
(a) loses all control
(b) exercises fine control
(c) exercises rough control
(d) none of the above

56. To stop conduction in a thyratron, the ........ voltage should be reduced to zero.
(a) grid (b) plate
(c) filament (d) none of the above

57. Ionisation of cold cathode diode takes place at ........ plate potential compared to hot cathode
gas diode.
(a) the same (b) much higher
(c) much lesser (d) none of the above

58. A gas-filled tube has ........ internal resistance after ionisation.

(a) low (b) high
(c) very high (d) moderate

59. The gas-filled tubes can handle ........ peak inverse voltage (PIV) as compared to equivalent
vacuum tubes.
(a) more (b) less
(c) the same (d) none of the above
60. A cold cathode diode is used as ........ tube.
(a) a rectifier
(b) a power-controlled
(c) a regulating
(d) an amplifier
61. A semiconductor is formed by ........ bonds.
(a) covalent (b) electrovalent
(c) co-ordinate (d) none of the above

62. A semiconductor has ........ temperature coefficient of resistance.

(a) positive (b) zero
(c) negative (d) none of the above

63. The most commonly used semiconductor is

(a) germanium (b) silicon
(c) carbon (d) sulphur

64. A semiconductor has generally ........ valence electrons.

(a) 2 (b) 3 (c) 6 (d) 4

65. The resistivity of pure germanium under standard conditions is about ........
(a) 6 × 104 _ Ωcm (b) 60 Ωcm
(c) 3 × 106 _ Ωcm (d) 6 × 10−4 Ωcm

66. The resistivity of pure silicon is about ........

(a) 100 Ωcm (b) 60000 Ω cm
 (c) 3 × 105 Ωcm (d) 1.6 × 10− 8 Ω cm

67. When a pure semiconductor is heated, its resistance ........

(a) goes up (b) goes down
(c) remains the same (d) cannot say

68. The strength of a semiconductor crystal comes from ........

(a) forces between nuclei
(b) forces between protons
(c) electron-pair bonds
(d) none of the above

69. When a pentavalent impurity is added to a pure semiconductor, it becomes ........

(a) an insulator
(b) an intrinsic semiconductor
(c) p-type semiconductor
(d) n-type semiconductor

70. Addition of pentavalent impurity to a semiconductor creates many ........

(a) free electrons (b) holes
(c) valence electrons (d) bound electrons

71. A pentavalent impurity has ........ valence electrons.

(a) 3 (b) 5 (c) 4 (d) 6

72. An n-type semiconductor is ........

(a) positively charged
(b) negatively charged
(c) electrically neutral
(d) none of the above

73. A trivalent impurity has ........ valence electrons.

(a) 4 (b) 5 (c) 6 (d) 3

74. Addition of trivalent impurity to a semiconductor creates many ........

(a) holes (b) free electrons
(c) valence electrons (d) bound electrons

75. A hole in a semiconductor is defined as ........

(a) a free electron
(b) the incomplete part of an electron pair bond
(c) a free proton
(d) a free neutron

76. The impurity level in an extrinsic semiconductor is about ........ of pure semiconductor.
(a) 10 atoms for 108 atoms
(b) 1 atom for 108 atoms
(c) 1 atom for 104 atoms
(d) 1 atom for 100 atoms

77. As the doping to a pure semiconductor increases, the bulk resistance of the semiconductor
........
(a) remains the same
(b) increases
(c) decreases
(d) none of the above

78. A hole and electron in close proximity would tend to ........

(a) repel each other
(b) attract each other
 (c) have no effect on each other
(d) none of the above

79. In a semiconductor, current conduction is due ........

(a) only to holes
(b) only to free electrons
(c) to holes and free electrons
(d) none of the above

80. The random motion of holes and free electrons due to thermal agitation is called ........
(a) diffusion (b) pressure
(c) ionisation (d) none of the above
81. A forward biased pn junction has a resistance of the ........
(a) order of Ω (b) order of kΩ
(c) order of MΩ. (d) none of the above

82. The battery connections required to forward bias a pn junction are ........
(a) +ve terminal to p and −ve terminal to n
(b) −ve terminal to p and +ve terminal to n
(c) −ve terminal to p and −ve terminal to n
(d) none of the above

83. The barrier voltage at a pn junction for germanium is about ........

(a) 3.5 V (b) 3V (c) zero (d) 0.3 V

84. In the depletion region of a pn junction, there is a shortage of

(a) acceptor ions (b) holes and electrons
(c) donor ions (d) none of the above

85. A reverse biased pn junction has ........

(a) very narrow depletion layer
(b) almost no current
(c) very low resistance
(d) large current flow

86. A pn junction acts as a ........

(a) controlled switch
(b) bidirectional switch
(c) unidirectional switch
(d) none of the above

87. A reverse biased pn junction has resistance of the........

(a) order of Ω (b) order of kΩ
(c) order of MΩ (d) none of the above

88. The leakage current across a pn junction is due to ........

(a) minority carriers
(b) majority carriers
(c) junction capacitance
(d) none of the above

89. When the temperature of an extrinsic semiconductor is increased, the pronounced effect is on .....
(a) junction capacitance
(b) minority carriers
(c) majority carriers
(d) none of the above.

90. With forward bias to a pn junction, the width of depletion layer ........
(a) decreases
 (b) increases
(c) remains the same
(d) none of the above

91. The leakage current in a pn junction is of the order of ........

(a) A (b) mA (c) kA (d) μA

92. In an intrinsic semiconductor, the number of free electrons

(a) equals the number of holes
(b) is greater than the number of holes
(c) is less than the number of holes
(d) none of the above

93. At room temperature, an intrinsic semiconductor has ........

(a) many holes only
(b) a few free electrons and holes
(c) many free electrons only
(d) no holes or free electrons

94. At absolute temperature, an intrinsic semiconductor has ........

(a) a few free electrons
(b) many holes
(c) many free electrons
(d) no holes or free electrons

95. At room temperature, an intrinsic silicon crystal acts approximately as ........

(a) a battery
(b) a conductor
(c) an insulator
(d) a piece of copper wire

96. Efficiency at maximum power transfer is

(a) 75% (b) 25% (c) 90% (d) 50%

97. When the outermost orbit of an atom has exactly 4 valence electrons, the material is generally
..............
(a) a metal (b) a non-metal
(c) a semiconductor (d) an insulator

98. Thevenin’s theorem replaces a complicated circuit facing a load by an ..............

(a) ideal voltage source and parallel resistor

(b) ideal current source and parallel resistor
(c) ideal current source and series resistor
(d) ideal voltage source and series resistor

99. The output voltage of an ideal voltage source is ..............

(a) zero
(b) constant
(c) dependent on load resistance
(d) dependent on internal resistance

100. The current output of an ideal current source is ..............

(a) zero
(b) constant
(c) dependent on load resistance
(d) dependent on internal resistance
101 When a small amount of external energy is applied, then the electrons in the ………….
band moves in to ……………band and leaves a vacancy in ………..band.
(a) conduction, valence, conduction (b) valence, conduction, valence
(c) Any of these (d) None of these
102 The measure of ability to conduct electric current is called as……….. ?
(a) Resistivity (b) Permeability
(c) Electrical conductivity (d) Reluctance

103 A crystal diode has……….. PN junction ?

(a) One (b) Two (c) Three (d) Four
104 A JFET is also called …………… transistor ?
(a) unipolar (b) bipolar (c) unijunction (d) None of these

105 The base of a transistor is ………….. doped ?

(a) heavily (b) lightly (c) moderately (d) None of these
106 The most widely used rectifier is ……………….?
(a) bridge full-wave rectifier (b) half-wave rectifier
(c) centre-tap full-wave rectifier (d) None of these
107 Which of the following diode is used as Voltage regulator ?
(a) LED (b) Varactor Diode (c) Zener Diode (d) All of these
108 The base of a transistor is ....... doped ?
(a) heavily (b) moderately (c) lightly (d) None of these
109 Which section of a transistor supplies charge carrier (electrons or holes) ?
(a) Collector (b) Junction (c) Emitter (d) All of these
110 In reverse bias, the junction resistance is very ……….?
(a) Low (b) High (c) Either high or low (d) None of these
111 Number of diode in three phase bridge rectifier are .............?
(a) 2 (b) 4 (c) 6 (d) 8
112 The process of raising the strength of a weak signal is known as………………?
(a) Amplification (b) Generation (c) Rectification (d) Conversion
113 The number of electrons or protons in an atom is called …… ?
(a) Atomic weight (b) Valancy
(c) Atomic structure (d) Atomic Number
114 The branch of engineering which deals with current conduction through a vacuum or gas
or semiconductor is known as………………?
(a) Electrical (b) Instrumentation (c) Electronics (d) None of these
115 The doping level in a zener diode is …………… that of a crystal diode ?
(a) more than (b) the same as
(c) less than (d) None of these