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Microfabrication of Piezoelectric MEMS
Microfabrication of Piezoelectric MEMS
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Jacek BABOROWSKI
6 April 2004 1
Kiel, 8 October 2004, jba
csem
Swiss Center of Electronics
and Microtechnologie
Microelectronics Division
RF & PIEZO
COMPONENTS GROUP
2
6 April 2004 ISIF 2004 jb INVITED TALK 2
Kiel, 7. Oktober 2004, jba
csem
Swiss Center for Electronics and Microtechnology
41%
45%
Privately owned company with ~ 70
Shareholders, none profit
14%
Long term contract with the Swiss Government Contract Public Projects Industrial Income
2003 :
Turnover ~ 54 MCHF, employees ~ 290
+ SPINN-OFFS
CERAMIC LABORATORY
(Prof. N.Setter Lab.)
4
6 April 2004 ISIF 2004 jb INVITED TALK 4
Kiel, 7. Oktober 2004, jba
From materials… to sensors…
Reproducible and industrially exploitable microfabrication
technology for piezoelectric MEMS based on PZT and AlN thin films
By understanding the By demonstrating the
basic principles microfabrication of
of piezoelectric device prototypes: acoustic
physics sensor, ultrasonic
transducer
By the development of
dedicated
micromachining method By integration of high
for AlN, PZT, Pt in performance piezoelectric
combinaison with deep films
• {100} PZT 53/47, e31,f = -12 C/m2, {111}
silicon etching of SOI • AlN, e31,f = -1.02 C/m2 , d33,f = 5.3 pm/V .
substrates
5
6 April 2004 ISIF 2004 jb INVITED TALK 5
Kiel, 7. Oktober 2004, jba
Today's challenges in piezoelectric MEMS
• Deposition and integration of high performance (e.g.high e31,f value)
piezoelectric films on a wafer scale with thickness up to 10 µm.
a
External load
Si structure
or displacement
strain ε1
z, 3
Integration, processing,
y, 2
properties
x, 1
6
6 April 2004 ISIF 2004 jb INVITED TALK 6
Kiel, 7. Oktober 2004, jba
Outline:
Introduction
1. Overview of piezoelectric devices
2. General Processing Issues
3. Examples
• Vibrating membranes and thin
plates (MUT, pressure sensors)
• Cantilevers and Beams
• RF MEMS
Outlook and Conclusions
Goal:
• Present the existing devices
• Comparison with our actual processing developments
• Highlight the common problems and limitations
7
6 April 2004 ISIF 2004 jb INVITED TALK 7
Kiel, 7. Oktober 2004, jba
Overview of piezoelectric devices
Piezoelectric thin films in MEMS
Micromachined flextensional actuators and transducers
Linear actuators
Piezoelectric laminated cantilevers, AFM, surgery tools, optical phase shifters, relays,
microvalves, pumps, micromirrors, switches .
Schiller and Polla (1991)
Lee, Itoh, Suga (1996)
Nippon Denso,Y. Ohtuka, (1995)
Chengkuo Lee, et al, (1996~1997)
J. Tsaur et al, AIST, Tsukuba, (2002) etc..
8
6 April 2004 ISIF 2004 jb INVITED TALK 8
Kiel, 7. Oktober 2004, jba
Plate and Standing waves
Flexural plate waves in membranes (Lamb waves) (Uozumi, Ohsone, White, 1983, ZnO)
9
6 April 2004 ISIF 2004 jb INVITED TALK 9
Kiel, 7. Oktober 2004, jba
… Flextensional ultrasonic transducers
10
6 April 2004 ISIF 2004 jb INVITED TALK 10
Kiel, 7. Oktober 2004, jba
… Flextensional ultrasonic transducers
11
6 April 2004 ISIF 2004 jb INVITED TALK 11
Kiel, 7. Oktober 2004, jba
… Flextensional ultrasonic transducers
13
6 April 2004 ISIF 2004 jb INVITED TALK 13
Kiel, 7. Oktober 2004, jba
… Flextensional ultrasonic transducers Droplet Ejectors
14
6 April 2004 ISIF 2004 jb INVITED TALK 14
Kiel, 7. Oktober 2004, jba
LINEAR ACTUATORS - Micromirrors
Piezoelectric In-Plane Scanning Mirror
(Nippon Denso,Y. Ohtuka, 1995)
15
6 April 2004 ISIF 2004 jb INVITED TALK 15
Kiel, 7. Oktober 2004, jba
Micromirrors
Piezoelectric In-Plane Scanning Mirror
(AIST, Tsukuba, Japan, Chengkuo Lee, et al, 1996~1997)
16
6 April 2004 ISIF 2004 jb INVITED TALK 16
Kiel, 7. Oktober 2004, jba
Micromirrors
Piezoelectric In-Plane Scanning Mirror
(AIST, Tsukuba, Japan, Chengkuo Lee, et al, 1996~1997)
A. B. C.
v1= -v3=2.5V at 13.6kHz v1= -v3=2.5V at 13.6kHz
v2= -v4=2.5V at 14.6kHz
v2= -v4=2.5V at 14.6kHz
v4
v1 v4 v1
v3 v2 v3
v2
17
6 April 2004 ISIF 2004 jb INVITED TALK 17
Kiel, 7. Oktober 2004, jba
Micromirrors
~ 1 micron/V
18
6 April 2004 ISIF 2004 jb INVITED TALK 18
Kiel, 7. Oktober 2004, jba
Micromirrors
2D Scanning Mirror Using Bi-layer PZT Films
J. Tsaur et al, AIST, Tsukuba, Japan, 2D Micro Scanner Actuated
by sol-gel derived double layered PZT, MEMS 2002
19
6 April 2004 ISIF 2004 jb INVITED TALK 19
Kiel, 7. Oktober 2004, jba
Cantilevers
20
6 April 2004 ISIF 2004 jb INVITED TALK 20
Kiel, 7. Oktober 2004, jba
Inertial systems
60 mic PZT
40 mic Si membrane
21
6 April 2004 ISIF 2004 jb INVITED TALK 21
Kiel, 7. Oktober 2004, jba
RF MEMS Piezoelectric RF-switch
22
6 April 2004 ISIF 2004 jb INVITED TALK 22
Kiel, 7. Oktober 2004, jba
RF MEMS Piezoelectric RF-switch
Tunable parallel-plate varactor <6V Q = 210 2.5 – 3.5 µm LG, Park et al.
23
6 April 2004 ISIF 2004 jb INVITED TALK 23
Kiel, 7. Oktober 2004, jba
2. Microfabrication of piezoelectric MEMS based on
deflecting structures
Common tasks
IC's • Silicon micromachining
• Photolithography, 1 µm resolution is sufficient (now 0.13 µm in IC's)
• Thin films deposition and etching processes for standard Madou (1997)
24
6 April 2004 ISIF 2004 jb INVITED TALK 24
Kiel, 7. Oktober 2004, jba
Piezoelectric multilayer, thin film structures
Substrates: Si, SiO2/SiN membranes, SiC, diamond*)
Electrodes: Pt/Ti, Mo, Al, Au/Cr
Piezoelectric layers: PZT, AlN, ZnO…
*) Shibata, Sensor and Actuators, 2004
J.Baborowski,
Journal of Electroceramics, 2004
Laminated PZT/Si deflecting structures used in piezoelectric MEMS:
bridge, cantilever and suspended membrane.
AlN PZT
e31,f [C/m2] -1.33 -12
d33,f [pm/V] 5.15 65
ε33,f 10.2 1200
D3 = e31, f ⋅(x1 + x2 )+ d33, f ⋅ σ3 Sensors tgδ 0.002 0.03
Current resp. [C/m2] 1.33 12
σ 1,2 = −e31, f ⋅ E3 , x3 = d33, f ⋅ E3 Actuators
Voltage resp. [GV/m2] 13 1
=
d 31 E
c 13 S/N [105 Pa0.5] 31.3 6.7
e 31 , f E E ≡ e 31 − E e 33 e 31 , f > e 31
s 11 + s 12 c 33
E
k2 0.22 0.15
e 2 s 13
d 33 = 33E ≡ d 33 − E d 31 < d 33
,f
c 33 E
s 11 + s 12 Power efficiency 110 5
P. Muralt, Integrated Ferroelectrics,1997
25
6 April 2004 ISIF 2004 jb INVITED TALK 25
Kiel, 7. Oktober 2004, jba
Film bulk acoustic resonator (FBAR)
Bulk micromachining BAW resonators are based on the
longitudinal thickness vibration mode of a
electrodes
piezoelectric thin film.
Acoustic insulation of the resonant structure
AlN
performed by air (or vacuum)
Si wafer
+ Large achievable coupling coefficient
+ Processing time
+ May be used in front end filters, or in
VCO's for low power RF applications.
Surface micromachining + High Q factor (typically up to 1000)
electrodes + Resonance frequency: 2-10 GHz
26
6 April 2004 ISIF 2004 jb INVITED TALK 26
Kiel, 7. Oktober 2004, jba
Solidly mounted resonator (SMR)
electrodes Acoustic insulation performed by a
AlN Bragg acoustic mirror
acoustic reflector
Si wafer
f0 = 2.4 GHz
Stress compensated layers for a
crack-free structure
The acoustic reflector is a stack Dense layers => low wave
attenuation
of alternating λ/4 layers made of
Very smooth interfaces => low wave
materials with very different diffraction
elastic properties.
M.A.Dubois, CSEM
27
6 April 2004 ISIF 2004 jb INVITED TALK 27
Kiel, 7. Oktober 2004, jba
2. Microfabrication of piezoelectric MEMS based on
deflecting structures
DEPOSITION and growth control PATTERNING
PVD sputtering Wet chemical etching
CSD (sol-gel) HDP etching
PLD Surface micromachining (Piekarski, 2001)
STRESS CONTROL
Tensile stresses present in most of the
layers (up to +800 MPa Pt/Ti)
Compressive stresses in SiO2 wetox (-
300MPa)
Very sensible to deposition conditions
(AlN) and poling (e.g. PZT +/-60MPa)
Incertitude in stress level in SOI
DIMENSIONAL CONTROL
substrates Defines miniaturization rules
Stress adjustment Defines precision of elastic behavior and
characteristics (resonance frequencies,
coupling factor)
Defines border conditions (accordance
between simulation models and reality)
(Lee,Itoh, 1996)
28
6 April 2004 ISIF 2004 jb INVITED TALK 28
Kiel, 7. Oktober 2004, jba
Deposition and integration of {100}-textured sol-gel PZT films on silicon
(Ceramics Lab., EPFL, 1996-2002) 5
2.5 10
1) Pt bottom electrode
PZT (100)/(001)
Maeder (1998)
PZT (200)/(002)
P(100) = 98%
2 105
Muralt (1998)
intensity (counts)
Pt (111)
Hiboux (1999) 5
1.5 10
PZT (111)
PZT (110)
5 104
0 100
2) Elaboration of PZT precursors 20 25 30 35 40 45
angle Θ
2 (deg)
50 {100}
Budd (1985)
3) Optimized Sol-gel process PZT 53/47 (100) on PbTiO3 (PT) seeding layer
Thickness: about 0.25 µm / layer; total up to 4 µm
-e31,f = 12 ± 0.3 C/m2
Cluster architecture:
loadlock, wafer transfer
module, 4 process chambers
30
6 April 2004 ISIF 2004 jb INVITED TALK 30
Kiel, 7. Oktober 2004, jba
Sputtering of AlN thin films
Reactive sputtering from a pure Al target
in a nitrogen atmosphere
Very smooth surface
Dense columnar microstructure
~3% uniformity on 4" wafer
c-axis orientation (FWHM[002] =
1.58°), induced by the hexagonal
plane of Pt (111)
d33,f=3.7±0.3 pmV-1 1.0E+06
1.0E+05
intensity
Bottom electrode: Ti , Pt 1.0E+03
AlN (002)
AlN (004)
Si (200)
Pt (111)
Si (400)
Pt (222)
1.0E+01
1.0E+00
30 40 50 60 70 80 90
2theta [°]
M.A.Dubois, CSEM
31
6 April 2004 ISIF 2004 jb INVITED TALK 31
Kiel, 7. Oktober 2004, jba
Deposition and integration of AlN films on SOI substrates
(CSEM 2004)
AlN Ti Pt
(0002) (0002) (111)
AlN Pt Ti Pt
(0004) (311) (0004) (222)
Pt
(200)
Counts(a.u)
AlN 30 40 50 60 70 80 90
2θ (degree)
z-deflection (µm)
100 5
8
0
6 0
PZT 53/47 -5 Poling of PZT effect on residual stress :
4 -100 -10 Deflection + 20 µm = + 60 MPa
Poling:+ 64 MPa after poling
σδ = 3 MPa/µm
2 -15
before poling
Film stress -200
-20
0 0 500 1000 1500 2000 Ledermann et al., Sensor and Actuators, 2003
25 30 35 40 45 50 55 60 65
distance from the attachement (µm)
Composition [Zr]/([Zr]+[Ti])
100
0
0 100 200 300 400 500 600 700 800 900 1000
-100
0
0.00 0.50 1.00 1.50 2.00 2.50
-200 -100
-300 -200
-400
-300
Thickness of SiO2 (nm)
AlN thickness [µm]
33
6 April 2004 ISIF 2004 jb INVITED TALK 33
Kiel, 7. Oktober 2004, jba
STRESS COMPENSATED BEAMS/ MEMBRANES
F =
b
R ∫ dz + ∑ ∫h dz = 0 (2)
−t s
r i i −1
r
0 hi
34
6 April 2004 ISIF 2004 jb INVITED TALK 34
Kiel, 7. Oktober 2004, jba
STRESS COMPENSATED BEAMS/ MEMBRANES
EXAMPLE of sol – gel PZT / Si
Au/Cr
PZT
Pt /Ti
height [µ m]
2 - 4 micron of PZT 29
27
5 micron of Si ~10 - 20 µm
25
23
21
19
0.5 1 1.5 2
distance [mm]
1 x 1mm2
4
Bending B1002-27
10 µm thick
3
less than 1 µm
height [µ m]
2
1
0
-1 0.5 0.7 0.9 1.1 1.3 1.5 1.7
-2
distance [mm]
36
6 April 2004 ISIF 2004 jb INVITED TALK 36
Kiel, 7. Oktober 2004, jba
MICROFABRICATION: PROCESSING WITH SOI WAFERS
(Ceramics Lab., EPFL, 1999-2002)
Au/Cr
Pt /Ti
Plasma
Etch (ICP, Cl2, Ar) Al
AlN
Wet etch (HCl:HF)
Pt
Air gap
Plasma Si
Etch (ICP, Cl2, Ar)
Deep Reactive
Ion Etching
(Plasma Etch, Bridge of suspended membrane Carazzetti et al.,EPFL 2002
ICP, RT, SiF6, C4 F8 )
Baborowski et al.,EPFL 2001
37
6 April 2004 ISIF 2004 jb INVITED TALK 37
Kiel, 7. Oktober 2004, jba
Reactive Ion Beam Etching of PZT and Pt thin films
2 µm
pumping
ions
+ PZT
wafer
water cooled 12.56 MHz Baborowski, Ledermann, Muralt (1999, 2000) PZT
substrate holder RF bias Pt
38
6 April 2004 ISIF 2004 jb INVITED TALK 38
Kiel, 7. Oktober 2004, jba
Advanced patterning for fundamental studies on ferroelectrics
gas
E-beam Ar, CCl4, CF4 2.45 GHz
ECR
Plasma
PMMA
PZT
grids
STO 800
600
Water cooled
-400
-600
S.Bühlman, J.Baborowski, P.Muralt, 2002
S.Bühlman PhD Thesis EPFL, 2004 -800
-20 -10 0 10 20
39
6 April 2004 ISIF 2004 jb INVITED TALK 39
Kiel, 7. Oktober 2004, jba
MICROFABRICATION: PROCESSING WITH SOI WAFERS
(Ceramics Lab., EPFL, 1999-2002)
Pt
PATTERNING OF GROOVES and SLIT SiO2
OPENINGS THROUGH PZT/Pt/SiO2/Si
(e.g.unclamped membranes, cantilevers)
Si
STANDARD: Photolithography & Dry etch:
• Standard photolithogaphy
SiO2 burried
• 100 nm Pt etch (ICP STS)
• 1200 nm wetox SiO2 etch (Alcatel, 300 sec)
• up to 50 µm Si (SOI) (Alcatel601E) – ETCH STOP on
SiO2buried
Au/Cr
PZT
SiO2 PVD
Pt /Ti
Below 5 micron ?
SiO2 burried SiO2 wet
Si bulk
40
6 April 2004 ISIF 2004 jb INVITED TALK 40
Kiel, 7. Oktober 2004, jba
MICROFABRICATION: PROCESSING WITH SOI WAFERS
(Ceramics Lab., EPFL, 1999-2002)
100nm Pt/Ti
1200 nm SiO2
947 nm
PATTERNING OF SUBMICRON SLIT OPENINGS <10 µm Si SOI
THROUGH AlN/Pt/SiO2/Si
(e.g.limited air conductivity in pressure sensors with minimum
roughness of sidewalls)
Au/Cr 100nm Pt/Ti
AlN or PZT
SiO2 PVD
1200 nm SiO2
Pt /Ti
Etching:
Pt: STS; Pt_etch (150W bias), 380sec. (photoresist removed)
SiO2: Alcatel 601E; SiO2 stand; DFA, 150 sec
Si: Alcatel 601E; Si_ambiant_2 (optimized for smalll openings); 360
sec
Final clean (solvant & SDR), plasma O2 ashing
41
6 April 2004 ISIF 2004 jb INVITED TALK 41
Kiel, 7. Oktober 2004, jba
Definition of membrane thickness (Ceramics Lab., EPFL, 1999-2004)
Standard vs. SOI wafers
Backside view;
2µm large slit
traversing the 10
µm thick
membrane
42
6 April 2004 ISIF 2004 jb INVITED TALK 42
Kiel, 7. Oktober 2004, jba
4. EXAMPLES (2001-2004)
Suspended Membranes:
RF Switch
43
6 April 2004 ISIF 2004 jb INVITED TALK 43
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3.1. MICROMACHINED ULTRASONIC TRANSDUCERS
We have studied:
MUT fundamentals,
thin film properties and processing,
fabrication and characterization of single elements,
FEA simulations,
experimental characterization of single transducers and linear arrays in air and
liquid
Parmenide
EU project
44
6 April 2004 ISIF 2004 jb INVITED TALK 44
Kiel, 7. Oktober 2004, jba
3.1. MICROMACHINED ULTRASONIC TRANSDUCERS
Fabricated devices: 2 micron PZT on 5 micron Si SOI substrate
45
6 April 2004 ISIF 2004 jb INVITED TALK 45
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Single element:
Comparison between the simulation and measurements
Basic Mode
@ 55,2 kHz
Second Mode
@ 106 kHz
Deflection Z (nm)
-1.3µm/V
-200
B B
• Observed
-400
-600
coupe A-A
-800 coupe B-B
coupe C-C
C
-1000
0 800 1500
A distance x (µm)
Deflection vs. distance - simulation
500
1.7 mic/V
• Simulated
Deflection z (micron)
-500
-1000
-1500
-2000
The shape is close to the desired piston movement. 0 200 400 600 800 1000
a1-df-res1-20dc
0.004
Q =135 0
k=23% -0.001
-0.002
7.2 105 7.3 105 7.4 105 7.5 105 7.6 105 7.7 105 7.8 105 7.9 105
Frequency (Hz)
48
6 April 2004 ISIF 2004 jb INVITED TALK 48
Kiel, 7. Oktober 2004, jba
LOW FREQUENCY SINGLE DEVICES
in Air and in FLUORINERT TM (3M)
/22
Q/5
k2=const
AIR: Fluorinert:
Paper
Receiver
Emitter
Plastic
3 1.5 3 0.15
sensor DISC F 3.1
1 0.5 1 0.05
0 0 0 0
-1 -0.5 -1 -0.05
emitter DISC F 1.1
-2 -1 -2 -0.1
Charge amplifier: 10 pC receiver DISC F 3.1
-3 Excitation frequency = 98 kHz, 10 V AC, 5 V offset -1.5 -3 -0.15
-4 -2 -4 -0.2
0 200 400 600 800 1000 0 200 400 600 800 1000
time (µs) time (µs)
50
6 April 2004 ISIF 2004 jb INVITED TALK 50
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3.2 Piezoelectric microphones for photoacoustic detection
AlN
Specificity of the application
3mm
1,2 mm
Low frequency operation Æ up to100Hz
Low acoustic pressure level Æ order of mPa B B
51
6 April 2004 ISIF 2004 jb INVITED TALK 51
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3.2. Acoustic sensors based on PZT sol-gel films
The cantilever concept for an audio microphone/microspeaker was proposed by White & al in 1998. (J. Micromech.
Microeng. 8 (1998) 230-238)
4.5 µm thick cantilever ZnO/SiN/SiO2: 10 µm slit, response at 100 Hz = 38 mV/Pa
70
150
60
Sensitivity (mV/Pa)
sensitivity (mV/Pa)
50
100
40
V = 4 cm3
V = 4 3cm
V = 2 cm3 30 V = 2 3cm
V = 1 cm3
50 V = 1 3cm
V = 0.5 cm3 20
V = 0.53cm
10
0
0 10 20 30 40 50 0
frequency (Hz) 0 10 20 30 40 50
frequency (Hz)
S0, theo = 3.21 pC/Pa or 321 mV/Pa S0, theo = 1.72 pC/Pa or 172 mV/Pa
S0, C5-3 = 226 mV/Pa ≈ 70 % S0, theo S0, B3-10 = 68.3 mV/Pa ≈ 39 % S0, theo
53
6 April 2004 ISIF 2004 jb INVITED TALK 53
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3.2. Acoustic sensors based on AlN films
Advantages of AlN based sensors:
Full IC compatible
Reduced Thermal Budget
No poling required
Good selectivity for micromachining Ground
Low losses
1.5x1 mm CANTILEVER
AlN on membrane
4.5E-07
4.0E-07
Si SOI 3.5E-07
3.0E-07
membrane
Re[Y]
2.5E-07
1.5E-07
5.0E-08
0.0E+00
6'000 6'500 7'000 7'500 8'000 8'500 9'000
Frequency [Hz]
54
6 April 2004 ISIF 2004 jb INVITED TALK 54
Kiel, 7. Oktober 2004, jba
Microhotplate as processing device for local thin film growth
Backside view
2 mm
After PZT
crystallization
Frontside view
PZT
Pt 100 nm Pt
SiO2 150 nm SiO2
Ta5Si3 200 nm
Cross-section Ta5Si3
Si3N4 200 nm
SiO2 650 nm Si3N4
SiO2
BAW resonators
Filters
RF PIEZOELECTRIC Switch
56
6 April 2004 ISIF 2004 jb INVITED TALK 56
Kiel, 7. Oktober 2004, jba
Conclusions
Piezoelectric Micro-Electro-Mechanical Systems (pMEMS) are efficient for monitoring of
pressure, vibration and positioning and for RF applications.
Technology for thin PZT / SOI MEMS and AlN / SOI MEMS demonstrated and
actuators & sensors has been fabricated with accordance to simulations and design
Actuators, vibrating membranes, deflecting systems, sensing devices in large range of
frequency (few Hz to few GHz) can be fabricated in mass quantity with high yield (the
use of silicon on insulator wafers in combination with deep silicon dry etching ICP)
Stress control of the multilayer thin film structures is key factor for achieving high and
uniform response.
Submicron patterning of complex piezoelectric structures achieved.
OPEN QUESTIONS:
• Yield and reproducibility in fabrication of piezoelectric layers
(PZT, AlN)
• Post processing (poling) and Packaging = Price
• Reliability and life time
• Low cost mass production facilities
• Special facilities
• Competitive new applications
57
6 April 2004 ISIF 2004 jb INVITED TALK 57
Kiel, 7. Oktober 2004, jba
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ACKNOWLEDGEMENTS
TEAMS of
Ceramic Lab, EPFL,
Center of Micro- Nanotechnology, EPFL
Center of Microscopy, EPFL
LMARC, Besancon, France,
CSEM, Neuchatel
HachUltra Analytics, Geneva