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2SB631 2SB631K: Silicon PNP Power Transistors
2SB631 2SB631K: Silicon PNP Power Transistors
DESCRIPTION ・
・With TO-126 package
・Complement to type 2SD600/K
・High breakdown voltage VCEO:-100/-120V
・High current: -1A
・Low saturation voltage,excellent hFE linearity
APPLICATIONS
・For low-frequency power
amplifier applications
PINNING
PIN DESCRIPTION
1 Emitter
Collector;connected to
2
mounting base
3 Base
2SB631 -100
VCBO Collector-base voltage Open emitter V
2SB631K -120
2SB631 -100
VCEO Collector-emitter voltage Open base V
2SB631K -120
Ta=25℃ 1
PD Total power dissipation W
TC=25℃ 8
CHARACTERISTICS
Tj=25℃ unless otherwise specified
2SB631 -100
Collector-emitter
V(BR)CEO IC=-1mA; RBE=∞ V
breakdown voltage
2SB631K -120
2SB631 -100
Collector-base
V(BR)CBO IC=-10μA ;IE=0 V
breakdown voltage
2SB631K -120
Switching times
IC=-500mA ; VCE=-12V
toff Turn-off time 0.10 μs
IB1=-IB2=-50mA
hFE-1 Classifications
D E F
2
JMnic Product Specification
PACKAGE OUTLINE
3
JMnic Product Specification