AO4800B, AO4800BL

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description Features

The AO4800B/L uses advanced trench technology to VDS (V) = 30V

provide excellent RDS(ON) and low gate charge. The two ID = 6.9A (VGS = 10V)
MOSFETs make a compact and efficient switch and RDS(ON) < 27mΩ (VGS = 10V)
synchronous rectifier combination for use in buck RDS(ON) < 32mΩ (VGS = 4.5V)
converters. Standard Product AO4800B/L is Pb-free
RDS(ON) < 50mΩ (VGS = 2.5V)
(meets ROHS & Sony 259 specifications).

UIS TESTED!
Rg,Ciss,Coss,Crss Tested!

D1 D2
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1

G1 G2
SOIC-8
S1 S2

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±12 V
Continuous Drain TA=25°C 6.9
Current AF TA=70°C ID 5.8 A
B
Pulsed Drain Current IDM 40
TA=25°C 1.9
PD W
Power Dissipation TA=70°C 1.2
B
Avalanche Current IAR 12 A
B
Repetitive avalanche energy 0.3mH EAR 22 mJ
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-AmbientAF t ≤ 10s 55 62.5 °C/W
RθJA
Maximum Junction-to-AmbientA Steady-State 90 110 °C/W
Maximum Junction-to-LeadC Steady-State RθJL 40 48 °C/W

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4800B/L

Electrical Characteristics (T J=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=24V, VGS=0V 0.002 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±12V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.7 1 1.5 V
ID(ON) On state drain current VGS=4.5V, V DS=5V 40 A
VGS=10V, I D=6.9A 20 27
mΩ
TJ=125°C 25 40
RDS(ON) Static Drain-Source On-Resistance
VGS=4.5V, I D=6A 23 32 mΩ
VGS=2.5V, I D=5A 34 50 mΩ
gFS Forward Transconductance VDS=5V, ID=5A 10 26 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.71 1 V
IS Maximum Body-Diode Continuous Current 4.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 900 1100 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 88 pF
Crss Reverse Transfer Capacitance 65 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.95 1.5 Ω
SWITCHING PARAMETERS
Qg Total Gate Charge 10 12 nC
Qgs Gate Source Charge VGS=4.5V, V DS=15V, I D=8.5A 1.8 nC
Qgd Gate Drain Charge 3.75 nC
tD(on) Turn-On DelayTime 3.2 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=1.8Ω, 3.5 ns
tD(off) Turn-Off DelayTime RGEN=6Ω 21.5 ns
tf Turn-Off Fall Time 2.7 ns
trr Body Diode Reverse Recovery Time IF=5A, dI/dt=100A/µs 16.8 20 ns
Qrr Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs 8 12 nC

A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in
any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
Rev 1 : Dec 2007

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4800B/L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60 20
10V
50
16 VDS=5V
4.5V
40
3V
12
ID (A)

ID(A)
30 125°C
2.5V 8
20
25°C

10 VGS=2V 4

0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

60
1.7
VGS=4.5V
Normalized On-Resistance

50
VGS=2.5V 1.5
RDS(ON) (mΩ)

40 1.3 VGS=10V
VGS=2.5V
1.1
30
VGS=4.5V VGS=2.5V
0.9
20
0.7
VGS=10V VGS=4.5 VGS=10V
10 0.5
0 5 10 15 20 -50 -25 0 25 50 75 100 125 150 175
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature

100 1.0E+01
90
1.0E+00
80 125°C
ID=6.9A
1.0E-01
70 125°C
RDS(ON) (mΩ)

60 1.0E-02
IS (A)

50 1.0E-03
40
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
25°C
1.0E-04
COMPONENTS
30 IN25°C
LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
1.0E-05 THE RIGHT TO IMPROVE PRODUCT DESIGN,
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES
20
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
10 1.0E-06
0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2

VGS (Volts) VSD (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4800B/L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

5 1400
VDS=15V
ID=6.9A 1200
4
Ciss
1000

Capacitance (pF)
VGS (Volts)

3
800

2 600

400 Crss
1
Coss
200

0 0
0 2 4 6 8 10 12 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0
50
TJ(Max)=150°C TJ(Max)=150°C
RDS(ON) TA=25°C TA=25°C
limited 40
10.0
Power (W)
ID (Amps)

30
10µs

20
1.0
1ms
10
DC 10ms
10s
0.1 1s 0
0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000
VDS (Volts) Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe
Ambient (Note E)
Operating Area (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient

RθJA=62.5°C/W
Thermal Resistance

0.1 HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET.PAPPLICATIONS
THIS PRODUCT D OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
TonIMPROVE PRODUCT DESIGN,
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO
Single Pulse T
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd. www.aosmd.com