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Tda 1563
Tda 1563
DATA SHEET
TDA1563Q
2 × 25 W high efficiency car radio
power amplifier
Product specification 2000 Feb 09
Supersedes data of 1998 Jul 14
File under Integrated Circuits, IC01
Philips Semiconductors Product specification
ORDERING INFORMATION
TYPE PACKAGE
NUMBER NAME DESCRIPTION VERSION
TDA1563Q DBS17P plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) SOT243-1
2000 Feb 09 2
Philips Semiconductors Product specification
BLOCK DIAGRAM
5 13
+
SLAVE
10
CONTROL OUT2−
−
MUTE −
16 11
IN2− − IV OUT2+
VI +
17
IN2+ + −
VI
60 60 +
kΩ kΩ VP
Vref 4
3 25 kΩ CSE
CIN −
+
60 60
kΩ kΩ +
VI
2
IN1− + −
VI +
1 7
IN1+ − IV OUT1−
MUTE −
− 8
SLAVE OUT1+
CONTROL
+
TDA1563Q
6 12 14 15 9
MGR173
2000 Feb 09 3
Philips Semiconductors Product specification
PINNING
IN2+ 17
MGR174
2000 Feb 09 4
Philips Semiconductors Product specification
FUNCTIONAL DESCRIPTION To avoid plops during switching from ‘mute’ to ‘on’ or from
‘on’ to ‘mute/standby’ while an input signal is present, a
The TDA1563Q contains two identical amplifiers with
built-in zero-crossing detector only allows switching at
differential inputs. At low output power (up to output
zero input voltage. However, when the supply voltage
amplitudes of 3 V (RMS) at VP = 14.4 V), the device
drops below 6 V (e.g. engine start), the circuit mutes
operates as a normal SE amplifier. When a larger output
immediately, avoiding clicks from the electronic circuit
voltage swing is needed, the circuit switches to BTL
preceding the power amplifier.
operation.
The voltage of the SE electrolytic capacitor (pin 4) is kept
With a sine wave input signal, the dissipation of a
at 0.5VP by a voltage buffer (see Fig.1). The value of this
conventional BTL amplifier up to 2 W output power is more
capacitor has an important influence on the output power
than twice the dissipation of the TDA1563Q (see Fig.10).
in SE mode. Especially at low signal frequencies, a high
In normal use, when the amplifier is driven with music-like value is recommended to minimize dissipation.
signals, the high (BTL) output power is only needed for a
The two diagnostic outputs (clip and diag) are
small percentage of the time. Assuming that a music signal
open-collector outputs and require a pull-up resistor.
has a normal (Gaussian) amplitude distribution, the
dissipation of a conventional BTL amplifier with the same The clip output will be LOW when the THD of the output
output power is approximately 70% higher (see Fig.11). signal is higher than the selected clip level (10% or 2.5%).
The heatsink has to be designed for use with music The diagnostic output gives information:
signals. With such a heatsink, the thermal protection will • about short circuit protection:
disable the BTL mode when the junction temperature
– When a short circuit (to ground or the supply voltage)
exceeds 150 °C. In this case, the output power is limited to
5 W per amplifier. occurs at the outputs (for at least 10 µs), the output
stages are switched off to prevent excessive
The gain of each amplifier is internally fixed at 26 dB. With dissipation. The outputs are switched on again
the MODE pin, the device can be switched to the following approximately 50 ms after the short circuit is
modes: removed. During this short circuit condition, the
• Standby with low standby current (<50 µA) protection pin is LOW.
• Mute condition, DC adjusted – When a short circuit occurs across the load (for at
least 10 µs), the output stages are switched off for
• On, operation.
approximately 50 ms. After this time, a check is made
The information on pin 12 (selectable clip) determines at to see whether the short circuit is still present.
which distortion figures a clip detection signal will be The power dissipation in any short circuit condition is
generated at the clip output. A logic 0 applied to pin 12 will very low.
select clip detection at THD = 10%, a logic 1 selects • during startup/shutdown, when the device is internally
THD = 2.5%. A logic 0 can be realised by connecting this muted.
pin to ground. A logic 1 can be realised by connecting it to
• temperature detection: This signal (junction temperature
Vlogic (see Fig.7) or the pin can also be left open. Pin 12
may not be connected to VP because its maximum input > 145°C) indicates that the temperature protection will
voltage is 18 V (VP > 18 V under load dump conditions). become active. The temperature detection signal can be
used to reduce the input signal and thus reduce the
The device is fully protected against a short circuit of the power dissipation.
output pins to ground and to the supply voltage. It is also
protected against a short circuit of the loudspeaker and
against high junction temperatures. In the event of a
permanent short circuit to ground or the supply voltage, the
output stage will be switched off, causing low dissipation.
With a permanent short circuit of the loudspeaker, the
output stage will be repeatedly switched on and off. In the
‘on’ condition, the duty cycle is low enough to prevent
excessive dissipation.
2000 Feb 09 5
Philips Semiconductors Product specification
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VP supply voltage operating − 18 V
non-operating − 30 V
load dump; tr > 2.5 ms − 45 V
VP(sc) short-circuit safe voltage − 18 V
Vrp reverse polarity voltage − 6 V
IORM repetitive peak output current − 4 A
Ptot total power dissipation − 60 W
Tstg storage temperature −55 +150 °C
Tvj virtual junction temperature − 150 °C
Tamb ambient temperature −40 − °C
THERMAL CHARACTERISTICS
Heatsink design
There are two parameters that determine the size of the
heatsink. The first is the rating for the virtual junction virtual junction
handbook, halfpage
temperature and the second is the ambient temperature at
which the amplifier must still deliver its full power in the OUT 1 OUT 1 OUT 2 OUT 2
BTL mode.
With a conventional BTL amplifier, the maximum power 3.6 K/W
3.6 K/W 3.6 K/W
dissipation with a music-like signal (at each amplifier) will 3.6 K/W
be approximately two times 6.5 W.
At a virtual junction temperature of 150 °C and a maximum
ambient temperature of 65 °C, Rth(vj-c) = 1.3 K/W and
0.6 K/W 0.6 K/W
Rth(c-h) = 0.2 K/W, the thermal resistance of the heatsink
150 – 65
should be: ---------------------- – 1.3 – 0.2 = 5 K/W
2 × 6.5
MGC424
2000 Feb 09 6
Philips Semiconductors Product specification
DC CHARACTERISTICS
VP = 14.4 V; Tamb = 25 °C; measured in Fig.7; unless otherwise specified.
Notes
1. The circuit is DC biased at VP = 6 to 18 V and AC operating at VP = 8 to 18 V.
2. If the junction temperature exceeds 150 °C, the output power is limited to 5 W per channel.
2000 Feb 09 7
Philips Semiconductors Product specification
Vmode 18
handbook, halfpage
Operating
3
Mute
2
1
Standby
0
MGR176
2000 Feb 09 8
Philips Semiconductors Product specification
AC CHARACTERISTICS
VP = 14.4 V; RL = 4 Ω; CSE = 1000 µF; f = 1 kHz; Tamb = 25 °C; measured in Fig.7; unless otherwise specified.
Notes
1. The distortion is measured with a bandwidth of 10 Hz to 30 kHz.
2. Frequency response externally fixed (input capacitors determine low frequency roll-off).
3. The SE to BTL switch voltage level depends on VP.
4. Noise output voltage measured with a bandwidth of 20 Hz to 20 kHz.
5. Noise output voltage is independent of Rs.
2000 Feb 09 9
Philips Semiconductors Product specification
Io
handbook, halfpage
10 µs
MGR177 max
handbook, halfpage
Vo
t
0
max short circuit
removed
short circuit
to ground
DIAG
CLIP
0
50 50 50 t
0 ms ms ms
t
maximum current short circuit to supply pins
MGR178
2000 Feb 09 10
Philips Semiconductors Product specification
1 µF 1000 µF
60 60
0.5Rs kΩ kΩ
IN1− 2
+
220 nF 7 OUT1−
−
3.9 Ω
4Ω
0.5Rs
IN1+ 1 100 nF
+ 8 OUT1+ 3.9 Ω
220 nF
100 nF
−
6 12 14 15 9 power ground
Vms
Rpu
Vlogic
Rpu
2.5%
10%
MGR180
Connect Boucherot filter to pin 8 or pin 10 with the shortest possible connection.
2000 Feb 09 11
Philips Semiconductors Product specification
35.56
+ RL-98 −
Out2 Out2
− 2.5% +
− −
Clip
In1 In2
+ 10% +
Mode Prot
Mute Clip gnd
gnd On
Dimensions in mm.
2000 Feb 09 12
Philips Semiconductors Product specification
35.56
2× 25 W high efficiency
Out2 Out1
17 1
220 nF 220 nF 1 µF
220 nF
In2 In1
GND
Vp
MGR190
Dimensions in mm.
2000 Feb 09 13
Philips Semiconductors Product specification
MBH692 MBH693
25 25
handbook, halfpage handbook, halfpage
Pd Pd
(W) (W)
20 20
(1)
(1)
15 15
(2)
(2)
10 10
5 5
0 0
0 2 4 6 8 10 0 2 4 6 8 10
Po (W) Po (W)
MGC428
2000 Feb 09 14
Philips Semiconductors Product specification
1 µF 1000 µF
IEC-268
60 60
FILTER kΩ kΩ
IN1− 2
+
220 nF 7 OUT1−
pink
noise
−
3.9 Ω
4Ω
IN1+ 1 100 nF
+ 8 OUT1+ 3.9 Ω
220 nF
100 nF
−
6 12 14 15 9 power ground
Vms
Rpu
Vlogic
Rpu
MGR181
Fig.13 Test and application diagram for dissipation measurements with a music-like signal (pink noise).
2000 Feb 09 15
Philips Semiconductors Product specification
MDA845 MDA844
150 250
handbook, halfpage handbook, halfpage
Ip
Iq (mA)
(mA) 200
100
150
100
50
50
0 0
0 8 16 24 0 2 4 6
Vp (V) Vms (V)
Vms = 5 V; RI = ∞. VP = 14.4 V; Vi = 25 mV
Fig.14 Quiescent current as a function of VP. Fig.15 IP as a function of Vms (pin 3).
MDA843 MDA842
60 10
handbook, halfpage handbook, halfpage
Po
THD + N
(W) (%)
(1)
40 1
(1)
(2)
(2)
20 10−1
(3) (3)
0 10−2
8 10 12 14 16 18 10−2 10−1 1 10 102
Vp (V) Po (W)
Fig.16 Output power as a function of VP. Fig.17 THD + noise as a function of Po.
2000 Feb 09 16
Philips Semiconductors Product specification
MDA841 MDA840
10 28
handbook, halfpage handbook, halfpage
Gv
THD + N (dB)
(%)
26
(1)
1
24
(2)
10−1
22
10−2 20
10 102 103 104 105 10 102 103 104 105 106
f (Hz) f (Hz)
(1) Po = 10 W.
(2) Po = 1 W. Vi = 100 mV.
MDA838 MDA839
−10 0
handbook, halfpage handbook, halfpage
αcs SVRR
(dB) (dB)
−30 −20
−50 −40
(2)
−90 −80
10 102 103 104 105 10 102 103 104 105
f (Hz) f (Hz)
(1) Po = 10 W.
(2) Po = 1 W.
Vripple(p-p) = 2 V.
Fig.20 Channel separation as a function of
frequency. Fig.21 SVRR as a function of frequency.
2000 Feb 09 17
Philips Semiconductors Product specification
MDA846
0.8
handbook, halfpage
Po
(W)
0.6
0.4
0.2
0
0 8 16 24
Vp (V)
Vi = 70 mV.
2000 Feb 09 18
Philips Semiconductors Product specification
Vload
−VP
VP
Vmaster
1/2 VP
0
VP
Vslave
1/2 VP
0
0 1 2 t (ms) 3
See Fig.7:
Vload = V7 − V8 or V11 − V10
Vmaster = V7 or V11
Vslave = V8 or V10
2000 Feb 09 19
Philips Semiconductors Product specification
2000 Feb 09 20
Philips Semiconductors Product specification
+ Rear + Front −
FL +
2.5% + FR
VBATT −
Line-in −
RL +
10% IO-98 + RR
Error On Diag Clip −
Car DSP
Left SAA7704/05/08 10 V to 16 V
on bottom side Vbattery
Right GND
Power ON Mute
I2C
PHILIPS Semiconductors
DSP
MGS827
Bottom copper layer
2000 Feb 09 21
Philips Semiconductors Product specification
VOLTAGE REGULATOR
handbook, full pagewidth
Ven1 VP
MICROCONTROLLER 2 3 VBATT
VBATT TDA3617J 220 nF
power GND Ven3 GND
1 8
6 7 9 5
REG2 HOLD Ven2 REG3 PLANE GND
4.7 kΩ
power
on 5V
47 µF 47 nF 47 µF 47 nF
10 kΩ
GND GND GND
5V 3.3 V DIG 3.3 V ANA BAS16/A6
4.7 kΩ A
error
10 kΩ
1 MΩ
BC848B/1k
mute
4.7 kΩ GND
B
diagnostic
C
4.7 kΩ
5V 3.3 V DIG 3.3 V ANA
clip 100 nF
100 Ω PLANE
VDDD5V2
VDDD5V3
VDDD3V1
VDDD3V2
VDDD3V3
VDDD3V4
VSSD5V1
VSSD5V2
VSSD5V3
VSSD3V1
VSSD3V2
VSSD3V3
VSSD3V4
100 nF
VDACN2
VDDA1
VDDA2
VSSA1
100 Ω
TP5
PLANE
VDACP
1 74 75 76 21 22 23 36 37 46 47 48 51 52 55 49 50 53 54 11 47 Ω
FLV
16 D
100 µF
VDACN1 2.2
2 FLI nF 47 Ω
PLANE 15 E
330 pF
FRV 47 Ω
CDLB 13 F
8.2 kΩ 73 2.2
1 µF 15 kΩ FRI nF 47 Ω
CDLI 14
LEFT 72 G
330 pF
CDRB RRV 47 Ω
8.2 kΩ 71 Car DSP 6 H
LINE
IN 1 µF 15 kΩ 2.2
RIGHT
CDRI RRI nF 47 Ω
70 SAA7704/05 / 08H 7 I
1 µF
CDGND
CD-GND 77 RLV 47 Ω
9 J
1 MΩ 2.2
VREFAD RLI nF 47 Ω
78 8 K
82 kΩ AMAFR
66
AMAFL VREFDA
67 12
TAPER
68 22 µF
TAPEL VSSA2
69 10
4 3 61 65 62 63 64 42 57 58 56 24 25 26 27 28 29 43 44 45
PLANE
AML
FML
SELFR
VDD(OSC)
VSS(OSC)
OSCIN
OSCOUT
DSPRESET
SCL
SDA
A0
CD2WS
CD2DATA
CD2CL
CD1WS
CD1DATA
CD1CL
RTCB
SHTCB
TSCAN
47 nF 22 µF
PLANE
220 nF MGS825
100 nF X1
220 220
PLANE PLANE Ω Ω PLANE
BLM21A10 PLANE
18 18 100
1 to 5 pF pF pF 100 pF
PLANE
6
5V 3.3 V DIG PLANE PLANE PLANE PLANE
I2C 8
SCL
7
SDA
2000 Feb 09 22
Philips Semiconductors Product specification
100 µH/6A
handbook, full pagewidth
VBATT V battery
GND
A
GND PGND
clip select 5V
2.5%
10%
GND
C
2200 µF
VBATT PGND
(16 V)
220 nF
VP1 VP2 GND
5 13 9 1000 µF
MODE CSE
6 4
CLIP (16 V)
15 OUT2+
11 OUT+
DIAG
14
SC 3.9 Ω FRONT
12 LEFT
IN2+ 100 nF
17 OUT2−
D 10 OUT−
220 nF
10 nF PGND
220 nF 3.9 Ω 100 nF
IN2− TDA1563Q
E 16
2200 µF
VBATT PGND MGS826
(16 V)
2000 Feb 09 23
Philips Semiconductors Product specification
2000 Feb 09 24
Philips Semiconductors Product specification
VP1, VP2
1, 2, 16, 17
MGR182
MGR183
6 MODE
MGR184
7, 11
4
MGR185
2000 Feb 09 25
Philips Semiconductors Product specification
8, 10
4
MGR186
12 SC VP2
12
MGR187
14, 15
MGR188
2000 Feb 09 26
Philips Semiconductors Product specification
PACKAGE OUTLINE
DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) SOT243-1
non-concave
Dh
x
D
Eh
d A2
j E
L3
L Q
c v M
1 17
Z e1 w M m e2
bp
e
0 5 10 mm
scale
17.0 4.6 0.75 0.48 24.0 20.0 12.2 6 3.4 12.4 2.4 2.1 2.00
mm 10 2.54 1.27 5.08 4.3 0.8 0.4 0.03
15.5 4.4 0.60 0.38 23.6 19.6 11.8 3.1 11.0 1.6 1.8 1.45
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
97-12-16
SOT243-1
99-12-17
2000 Feb 09 27
Philips Semiconductors Product specification
SOLDERING The total contact time of successive solder waves must not
exceed 5 seconds.
Introduction to soldering through-hole mount
packages The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
This text gives a brief insight to wave, dip and manual
specified maximum storage temperature (Tstg(max)). If the
soldering. A more in-depth account of soldering ICs can be
printed-circuit board has been pre-heated, forced cooling
found in our “Data Handbook IC26; Integrated Circuit
may be necessary immediately after soldering to keep the
Packages” (document order number 9398 652 90011).
temperature within the permissible limit.
Wave soldering is the preferred method for mounting of
through-hole mount IC packages on a printed-circuit Manual soldering
board.
Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
Soldering by dipping or by solder wave
2 mm above it. If the temperature of the soldering iron bit
The maximum permissible temperature of the solder is is less than 300 °C it may remain in contact for up to
260 °C; solder at this temperature must not be in contact 10 seconds. If the bit temperature is between
with the joints for more than 5 seconds. 300 and 400 °C, contact may be up to 5 seconds.
Suitability of through-hole mount IC packages for dipping and wave soldering methods
SOLDERING METHOD
PACKAGE
DIPPING WAVE
DBS, DIP, HDIP, SDIP, SIL suitable suitable(1)
Note
1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
DEFINITIONS
2000 Feb 09 28
Philips Semiconductors Product specification
NOTES
2000 Feb 09 29
Philips Semiconductors Product specification
NOTES
2000 Feb 09 30
Philips Semiconductors Product specification
NOTES
2000 Feb 09 31
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Printed in The Netherlands 753503/25/02/pp32 Date of release: 2000 Feb 09 Document order number: 9397 750 06309