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HO CHI MINH CITY UNIVERSITY OF TECHNOLOGY – FACULTY OF ELECTRICAL AND ELECTRONICS ENGINEERING

INTRO TO ELECTRICAL AND COMPUTER ENGINEERING (ECE110)


FINAL EXAMINATION
Semester 2 (2018-2019)
Date: June 13, 2019
Duration: 90 minutes

Student’s Name Score


Student ID Number

Department of Electronics Engineering Lecturer

Nguyen Ly Thien Truong

INSTRUCTIONS:
 Answer on this question sheet.
 Lectures, class notes, books, laptops, iPads, iPhones, etc. are NOT allowed.
 Arithmetic-only calculators are accepted.
 Show all your work, e.g., your solution process, the equation(s) that you use, the
values of the variables used the equation(s), etc.
 Include the unit of measurement in each answer.
 Do NOT communicate with any other students.

Problem 1 (L.O.2) (2.0 points): Node Method


Use node analysis to find VA, VB, VC, and VD in the circuit below.

VB
R4
R2
2.0kΩ
6mA 1.0kΩ

VAVA
VB
R1
VC - + VD
VC
1.0kΩ
12 V
+
R3 R5
6V 1.0kΩ 2.0kΩ
-

Final exam - Page 1 of 4


HO CHI MINH CITY UNIVERSITY OF TECHNOLOGY – FACULTY OF ELECTRICAL AND ELECTRONICS ENGINEERING

Problem 2 (L.O.2) (2.0 points): Thévenin& Norton Equivalent Circuits


1. Find the Thévenin equivalent circuit for circuit C (inside the dashed rectangle).
R1 R2 R4 A RTH A
 
1.0kΩ 1.0kΩ 1.0kΩ
+
+ R3
2.0kΩ 2.0kΩ
VAVB RL VTH 2.0kΩ
12
VA V
1.0kΩ
R1 RL
12 V 4mA
-
-

 
C B C B

2. Find RL in the circuit above in order to achieve maximum power transfer.

Problem 3 (L.O.3) (1.5 points): Diode


1. Consider the circuit shown in Figure 1. Determine the relationship between 𝑣0 (𝑡) and 𝑣(𝑡).
2. Sketch the output waveform 𝑣0 (𝑡) for the interval 0 ≤ 𝑡 ≤ 10ms.

Figure 1
Final exam - Page 2 of 4
HO CHI MINH CITY UNIVERSITY OF TECHNOLOGY – FACULTY OF ELECTRICAL AND ELECTRONICS ENGINEERING

Problem 4 (L.O.3) (1.5 points): BJT


Given VCC = 10V; RB = 33kΩ; RE = 470Ω; VBEON= 0.7V; β= 100; VCESAT = 0.2V
IC
1. When VBB = 0.5V, and RC = 1kΩ, determine IB,
IC, IE, VCE and the state of BJT.

IB

IE

2. When VBB = 6V, and RC = 1kΩ, determine the power dissipated in BJT.

3. When VBB = 6V, find the smallest value of RC such that BJT operates in the saturation
region.

Final exam - Page 3 of 4


HO CHI MINH CITY UNIVERSITY OF TECHNOLOGY – FACULTY OF ELECTRICAL AND ELECTRONICS ENGINEERING

Problem 5 (L.O.4) (2.0 points): Basic Logic Gates


Design a combinational circuit with three inputs (A, B, and C), and one output (F). The
output is 1 when the input has at least two consecutive 1’s. The output is 0 otherwise.

1. Determine the truth table for F(A,B,C).

A B C F
0 0 0
0 0 1
0 1 0
0 1 1
1 0 0
1 0 1
1 1 0
1 1 1

2. Design the circuit using AND-OR structure.

3. Design the circuit using NAND gates only.

Problem 6 (L.O.4) (1.0 point): Basic Boolean Algebra Identities


̅̅̅̅̅̅̅̅̅̅̅̅̅̅
Using Boolean identities, prove that (𝐀𝐁̅+𝐀 ̅ 𝐁)(𝐀 + 𝐁)𝐂 = 𝐀𝐁𝐂

Final exam - Page 4 of 4

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