HO CHI MINH CITY UNIVERSITY OF TECHNOLOGY – FACULTY OF ELECTRICAL AND ELECTRONICS ENGINEERING

INTRO TO ELECTRICAL AND COMPUTER ENGINEERING (ECE110)

FINAL EXAMINATION
Semester 1 (2018-2019)
Date: December 10, 2018
Duration: 90 minutes

Student’s Name Score

Student ID Number

Department of Electronics Engineering Lecturer

Nguyen Ly Thien Truong

INSTRUCTIONS:
 Answer on this question sheet.
 Lectures, class notes, books, laptops, iPads, iPhones, etc. are NOT allowed.
 Arithmetic-only calculators are accepted.
 Show all your work, e.g., your solution process, the equation(s) that you use, the
values of the variables used the equation(s), etc.
 Include the unit of measurement in each answer.
 Do NOT communicate with any other students.

Problem 1 (2.0 points): Node Method

Use the node method to solve for VA, VB, VC, VI, I1, and I2.

V2
A I1 R1 B + - C
10Ω
5V
R2 I2
10Ω
+ V1 R3
9V 2Ω
- + I
VI 0.1 A
-

Final exam - Page 1 of 4

HO CHI MINH CITY UNIVERSITY OF TECHNOLOGY – FACULTY OF ELECTRICAL AND ELECTRONICS ENGINEERING

Problem 2 (2.0 points): Thévenin & Norton Equivalent Circuits

1. Find the Thévenin equivalent circuit for circuit C (inside the dashed rectangle).
R1 R3 A RTH
RTH A
10Ω 5Ω I1
I1
+ +
V1 R2 I R4 VTH
VTH 10Ω R4
20 V 10Ω 2A 20Ω
-
20 V 20Ω
-

C B B

Hint: use the “fast algorithm” to find RTH, and the source conversion theorems to find VTH.

2. Compute the current I1.

Problem 3 (1.5 points): Diode

Use the large signal model for diodes; find the minimum value of Vin such that both of
diodes are forward-biased. Assume that VON = 0.7V
R1 D1 D2

10Ω
R3
+ Vin R2 10Ω
1BH62
10Ω
- 1BH62
+ V1
6V
2V
-

Hint: In case the diode D2 is forward-biased, the diode D1 is also forward-biased too.

Final exam - Page 2 of 4

HO CHI MINH CITY UNIVERSITY OF TECHNOLOGY – FACULTY OF ELECTRICAL AND ELECTRONICS ENGINEERING

Problem 4 (1.5 points): BJT

Given Vcc = 5V; Rb = 56 kΩ; Rc = 2 kΩ; VBEON = 0.7V; β = 100; VCESAT = 0.2V
IC
Rc 1. When Vin = 3V, determine IB, IC, VCE and the
2kΩ state of transistor.
+
Rb IB +
VCE Vcc
56kΩ 5V
+ -
Vin 6 Q1
V -
- 2N1711

2. When Vin = 1.5V, determine IB, IC, VCE, the state of transistor, and the power
dissipated in BJT.

3. Estimate the maximum power dissipated in BJT.

Final exam - Page 3 of 4

HO CHI MINH CITY UNIVERSITY OF TECHNOLOGY – FACULTY OF ELECTRICAL AND ELECTRONICS ENGINEERING

Problem 5 (1.0 point): Basic Logic Gates

Determine the truth table for F(A,B,C).

A
U1A
I 7404N
U5A
7432N
U2A
U3A
U4A
7408J

B F

J
C

A B C I J F
0 0 0
0 0 1
0 1 0
0 1 1
1 0 0
1 0 1
1 1 0
1 1 1

Problem 6 (2.0 points): Basic Boolean Algebra Identities

Use the following circuit for this problem.
A U3A
U1A
7408J
U5A
7408J 4075BP_15V
U2A
7408J
7404N
U4A
B
F
C

1. Find the expression of 𝐅(𝐀, 𝐁, 𝐂).

𝐅(𝐀, 𝐁, 𝐂) =
̅𝐂
2. Using Boolean identities prove that 𝐅(𝐀, 𝐁, 𝐂) = 𝐀𝐁 + 𝐁

Final exam - Page 4 of 4