FET (Unipolar devices) – either free electron or holes

BJT (Bipolar devices) - both free electrons or holes

FET is three-terminal semiconductor devices, with source, drain, and gate terminals. Current flows from
source to drain through an active channel. This current flow is regulated by the voltage applied across
the gate and source terminal
Types of FET

 JFET (junction) –
o N-channel
o P-channel
 IGFET (insulated gate) - common example is a MOSFET (metal oxide semiconductor)
o Depletion type
 N-channel
 P-channel
o Enhancement type
 N-channel
 P-channel

Advantages:

 Thermal stability
 Less noise
 High input impedance
 Can be used at high frequency
 Can be used to amplify low power signals, the signals don't need to expend energy to control
the gate
 Low current consumption, therefore low heat generation enables denser packing of FETs in
integrated circuits.

Disadvantages:

 Poor frequency response and lower frequency limits compared to BJTs, because of high input
capacitance
 Slower switching speeds
 Sensitive, can be damaged from static electricity

Applications:

 Integrated Circuit
 Switch
 Amplifier
 Amplitude modulation
 Oscillator
Sources:

https://www.electronics-notes.com/articles/electronic_components/fet-field-effect-transistor/what-is-
a-fet-types-overview.php

https://www.electronics-tutorials.ws/transistor/tran_5.html

https://www.elprocus.com/what-are-the-types-field-effect-transistor/

https://electricalacademia.com/electronics/field-effect-transistor-fet-types-jfet-mosfet-construction/

http://www.science-campus.com/engineering/electronics/semiconductor_theory/bjt-fet.php