Fuji Power MOSFET SuperFAP-G series Target Specification PRELIMINARY

2SK3677-01MR (700V/0.93Ω/12A)
1) Package TO-220F

2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified)

Items Symbols Ratings Units
Drain-Source Voltage VDS 700 V
Continuous Drain Current ID ±12 A
Pulsed Drain Current ID(pulse) ±48 A
Gate-Source Voltage VGS ±30 V
Repetitive and Non-Repetitive
IAR 12 A
Maximum Avalanche Current
Non-Repetitive
EAS 276.7 mJ
Maximum Avalanche Energy *1
Maximum Drain-Source dV/dt dVDS/dt 20 kV/us
Peak Diode recovery dV/dt dV/dt 5 kV/us *2
PD ＠Ｔc=25℃ 70 W
Maximum Power Dissipation
PD @Ta=25℃ 2.16 W
Operating and Storage Tch 150 ℃
Temperature range Tstg -55 ∼ +150 ℃
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without

3)Electrical Characteristics (Tch=25℃ unless otherwise specified)

Items Symbols Test Conditions min. typ. max. Units
Drain-Source Breakdown Voltage BVDSS ID=250uA VGS=0V 700 --- --- V
the express written consent of Fuji Electric Co.,Ltd.

Gate Threshold Voltage VGS(th) ID=250uA VDS=VGS 3.0 --- 5.0 V

VDS=700V Tch=25℃ --- --- 25 μA
Zero Gate Voltage Drain Current IDSS
VGS=0V Tch=125℃ --- --- 250 μA
Gate-Source Leakage Current I GSS V GS =±30V VDS=0V --- --- 100 nA
Drain-Source On-State Resistance RDS(on) ID=6A VGS=10V --- --- 0.93 Ω
Input Capacitance Ciss VDS=25V --- 1200 ---
Output Capacitance Coss VGS=0V --- 150 --- pF
Reverse Transfer Capacitance Crss f=1MHz --- 7 ---
Total Gate Charge Qg Vcc=350V --- 34 ---
Gate to Source Charge Qgs ID=12A --- 11 --- nC
Gate to Drain (Miller) Charge Qgd VGS=10V --- 10 ---
Avalanche Capability IAV L=3.52mH Tch=25℃ 12 --- --- A
Diode Forward On-Voltage VSD IF=12A,VGS=0V,Tch=25℃ --- 1.0 1.5 V

4) Thermal Characteristics
Items Symbols Test Conditions min. typ. max. Units
Channel to Case Rth(ch-c) 1.786 ℃/W
Channel to Ambient Rth(ch-a) 58.0 ℃/W

*1 L=3.52mH,Vcc=70V
*2 IF≤-ID,-di/dt=50A/µs,Vcc≤BVDSS,Tch≤150°C

DATE NAME APPROVED

Fuji Electric Co.,Ltd.
DRAWN '02-07-24
CHECKED '02-07-24
DWG.NO.

REVISIONS MT5F12489 1/1

MA4LE