IIT JAMMU- CLASS TEST

Course code - EFD009U2M

Time: 1 hrs. Max. Marks 20

Note: All questions are compulsory and marks are mentioned against each question
This question paper contains one page

Figures at the right hand margin indicate marks

All parts of a question should be answered at one place
Q. No Marks
Draw the variation of the Femi level of a n-type semiconductor with doping concertation 2
1 and with temperature. Plot for all possible temperatures.
Show that the minimum conductivity of a semiconductor occurs when 𝑛# = 2
2 𝑛% &(𝜇) /𝜇+ ), where 𝑛# is the electron concentration in the conduction band, 𝜇) , 𝜇+ are
the hole and electron mobility respectively, 𝑛% is the intrinsic carrier concentration.
3 A new semiconductor has Nc = 1019cm, Nv = 5 ´ 1018 cm-3 and Eg = 2 eV. If it is doped 3
with 1017 atoms/cm3 donors (fully ionized), calculate the electron, hole and intrinsic
carrier concentration at room temperature.
Discuss the origin of contact potential in an abrupt p-n junction diode and show that 3
4 the junction potential for p-n junction diode depends on the ratio between the majority
carriers of one side to the minority carrier of other side.
5 Estimate the hole current in an abrupt p-n homo-junction diode at an applied bias V in 3
terms of its minority carrier concentration.
An abrupt Si p-n junction has Na = 1017/cm3 on one side and Nd = 1015/cm3 on other side 5
6 with the intrinsic carrier concentration of 1010/cm3. Draw the equilibrium band diagram
of the junction. Determine the maximum electric filed and minority carrier
concentration at the p-type and n-type at equilibrium. Assume the dielectric constant of
Si is 11.8.
7 Draw the equilibrium band alignments for the following band homojunctions 2

Ef1
Ef3
(a)
Ef2

Ef2
(b)
Ef3
Ef1