Module 5 Transistors - Device Perspective

Module 5
Transistors- Device Perspective
1
Operation of the npn transistor in the active mode
Figure 5.3 Current flow in an npn transistor biased to operate in the active mode. (Reverse
current components due to drift of thermally generated minority carriers are not shown.)2
anand.st@vit.ac.in
Figure 5.4 Profiles of minority-carrier concentrations in the base and in the emitter of an npn
transistor operating in the active mode: VBE>0 and VCB ≥ 0. 3
anand.st@vit.ac.in
Eqn. 1
np0 – thermal equilibrium value of the minority carrier (electron) concentration in the
base region
The electron diffusion current,
Eqn. 2
AE – cross sectional area of the base emitter region

q - Magnitude of the electron charge
Dn – electron diffusivity in the base
W – Effective width anand.st@vit.ac.in 4
The Collector current,

Eqn. 3
Eqn. 4
Sub
Eqn. 5
anand.st@vit.ac.in 5
The Base current,

Eqn. 6
DP – Hole diffusivity in the emitter

Lp – Hole diffusion length in the emitter
ND – Doping concentration in the emitter
Eqn. 7
τb - Minority carrier life time

Qn – Minority carrier charge in the base region
The Base current,
Qn represented by the area of the triangle under the straight line distribution
Eqn. 8
Sub. Eqn .1 , and replace the value of np0
Eqn. 9
Sub. Eqn .9 ,in eqn 7
Eqn. 10
The Base current, add eqn 10 and Eqn 6
Eqn. 11
Comparing Eqn 3 and Eqn 11
Eqn. 12
Eqn. 13
Eqn. 14
The Collector Current
Eqn. 15
Use of Eqns 12 and 15
Eqn. 16
Eqn. 17
Alternatively, we can express Eqn. 16
Eqn. 18
The Collector Current
Eqn. 19
The emitter current equation in Eqn. 17 can be written
Eqn. 20
Finally, we can express β in terms of α, use Eqn. 19
Eqn. 21
Structure of actual Transistor
Eqn. 22
Structure of actual Transistor
The Ebers – Moll (EM) Model
Eqn. 23
Eqn. 24
Eqn. 25
Eqn. 26
Eqn. 27
Sub. Eqn 26 and Eqn 27 in Eqns 23, 24 and 25
Eqn. 28
Eqn. 29
Eqn. 30
WKT
Eqn. 31
Eqn. 32
Eqn. 33
Eqn. 34
Eqn. 35
The pnp transistor
The pnp transistor
Current – Voltage Characteristics
Circuit symbols and Conventions
Figure 5.13 Circuit symbols for BJTs.
Current – Voltage Characteristics
Circuit symbols and Conventions
Figure 5.14 Voltage polarities and current flow in transistors biased in the active mode.
Graphical Representation of Transistor Characteristics
Figure 5.17 Effect of temperature on the iC–vBE characteristic. At a constant emitter current (broken line), vBE changes by –2 mV/C.
The Common – Base Characteristics
Figure 5.18 The iC–vCB characteristics of an npn transistor.
In Saturation region, Eber’s Moll equations can be used to obtain the following
expression
Eqn. 36
Dependence of ic on the collector voltage – The Early Effect
Figure 5.19 (a) Conceptual circuit for measuring the iC –vCE characteristics of the BJT. (b) The iC –vCE characteristics of a practical BJT.
Eqn. 37
Eqn. 38
Afrer, sub. ic
Eqn. 39
Alternatively,
Eqn. 40
Eqn. 41
Figure 5.20 Large-signal equivalent-circuit models of an npn BJT operating in the active mode in the common-emitter configuration.
The Common – Emitter characteristics
Figure 5.21 Common-emitter characteristics. Note that the horizontal scale is expanded around the origin to show the saturation region in some
detail.
The Common – Emitter characteristics
The saturation voltage VCEsat and Saturation resistance RCEsat
Figure 5.22 Typical dependence of b on IC and on temperature in a modern integrated-circuit npn silicon transistor intended for operation
around 1 mA.
Figure 5.23 An expanded view of the common-emitter characteristics in the saturation region.
Figure 5.24 (a) An npn transistor operated in saturation mode with a constant base current IB. (b) The iC–vCE characteristic curve corresponding to
iB = IB. The curve can be approximated by a straight line of slope 1/RCEsat. (c) Equivalent-circuit representation of the saturated transistor. (d) A
simplified equivalent-circuit model of the saturated transistor.
MOSFET
34
MOSFET
35
MOSFET
Figure The drain current iD versus the drain-to-source voltage vDS for an enhancement-type NMOS transistor operated with vGS > Vt.
MOSFET
Figure Increasing vDS causes the channel to acquire a tapered shape. Eventually, as vDS reaches vGS – Vt’ the channel is pinched off at the drain end.
Increasing vDS above vGS – Vt has little effect (theoretically, no effect) on the channel’s shape.
MOSFET
MOSFET
Derivation of the iD – VDS relationship
MOSFET
MOSFET
MOSFET
MOSFET
Prob.
MOSFET
Prob.
MOSFET
Prob.
P-channel MOSFET
Figure Cross-section of a CMOS integrated circuit. Note that the PMOS transistor is formed in a separate n-type region, known as an n well.
Another arrangement is also possible in which an n-type body is used and the n device is formed in a p well. Not shown are the connections
made to the p-type body and to the n well; the latter functions as the body terminal for the p-channel device.
Circuit symbol
Figure (a) Circuit symbol for the n-channel enhancement-type MOSFET. (b) Modified circuit symbol with an arrowhead on the source
terminal to distinguish it from the drain and to indicate device polarity (i.e., n channel). (c) Simplified circuit symbol to be used when
the source is connected to the body or when the effect of the body on device operation is unimportant.
The ID – VDS characteristics
Figure (a) An n-channel enhancement-type MOSFET with vGS and vDS applied and with the normal directions of
current flow indicated. (b) The iD–vDS characteristics for a device with k’n (W/L) = 1.0 mA/V2.
Figure The iD–vGS characteristic for an enhancement-type NMOS transistor in saturation (Vt = 1 V, k’n W/L = 1.0 mA/V2).
ID – VDS characteristics
Figure Large-signal equivalent-circuit model of an n-channel MOSFET operating in the saturation

region.
Figure The relative levels of the terminal voltages of the enhancement NMOS transistor for operation in the triode
region and in the saturation region.
Finite output resistance in saturation
Figure Increasing vDS beyond vDSsat causes the channel pinch-off point to move slightly away from the drain, thus
reducing the effective channel length (by DL).
Figure Effect of vDS on iD in the saturation region. The MOSFET parameter VA depends on the process technology and, for a given
process, is proportional to the channel length L.
Figure Large-signal equivalent circuit model of the n-channel MOSFET in saturation, incorporating the output resistance ro. The
output resistance models the linear dependence of iD on vDS and is given by Eq. (4.22).
-
-
Characteristics of p - channel MOSFET
Figure (a) Circuit symbol for the p-channel enhancement-type MOSFET. (b) Modified symbol with an arrowhead on the source lead. (c)
Simplified circuit symbol for the case where the source is connected to the body. (d) The MOSFET with voltages applied and the
directions of current flow indicated. Note that vGS and vDS are negative and iD flows out of the drain terminal.
Figure The relative levels of the terminal voltages of the enhancement-type PMOS transistor for operation in the triode region and in the
saturation region.

Module 5 Transistors - Device Perspective

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Module 5

Transistors- Device Perspective

The electron diffusion current,

AE – cross sectional area of the base emitter region

The Collector current,

The Base current,

DP – Hole diffusivity in the emitter

τb - Minority carrier life time

The Base current,

Sub. Eqn .1 , and replace the value of np0

Sub. Eqn .9 ,in eqn 7

The Base current, add eqn 10 and Eqn 6

Comparing Eqn 3 and Eqn 11

The Collector Current

Use of Eqns 12 and 15

Alternatively, we can express Eqn. 16

The emitter current equation in Eqn. 17 can be written

Finally, we can express β in terms of α, use Eqn. 19

Sub. Eqn 26 and Eqn 27 in Eqns 23, 24 and 25

Figure 5.13 Circuit symbols for BJTs.

Figure 5.18 The iC–vCB characteristics of an npn transistor.

Figure Large-signal equivalent-circuit model of an n-channel MOSFET operating in the saturation

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