AOT1606L/AOB1606L

60V N-Channel Rugged Planar MOSFET

General Description Product Summary

The AOT1606L/AOB1606L uses a robust technology that VDS 60V

is designed to provide efficient and reliable power ID (at VGS=10V) 178A
conversion even in the most demanding applications,
RDS(ON) (at VGS=10V) < 6.3mΩ
including motor control. With low RDS(ON) and excellent
thermal capability this device is appropriate for high
current switching and can endure adverse operating
conditions.

100% UIS Tested

100% Rg Tested

TO-263
TO220
Top View Bottom View D2PAK D
Top View Bottom View

D
D D
D

G
S G S S
D D G
G S G
S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 178
ID
Current G TC=100°C 126 A
Pulsed Drain Current C IDM 310
Continuous Drain TA=25°C 12
IDSM A
Current TA=70°C 10
Avalanche Current C IAS, IAR 125 A
Avalanche energy L=0.1mH C EAS, EAR 781 mJ
TC=25°C 417
PD W
Power Dissipation B TC=100°C 208
TA=25°C 2.1
PDSM W
Power Dissipation A TA=70°C 1.3
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 12 15 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 48 60 °C/W
Maximum Junction-to-Case Steady-State RθJC 0.3 0.36 °C/W

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 AOT1606L/AOB1606L

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 60 V
VDS=60V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µΑ 2.5 3.1 3.7 V
ID(ON) On state drain current VGS=10V, VDS=5V 310 A
VGS=10V, ID=20A 5.5 6.3
mΩ
TO220 TJ=125°C 9.4 10.8
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=20A
TO263 5.2 6 mΩ
gFS Forward Transconductance VDS=5V, ID=20A 53 S
VSD Diode Forward Voltage IS=1A, VGS=0V 0.7 1 V
IS Maximum Body-Diode Continuous CurrentG 178 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 2980 3735 4500 pF
Coss Output Capacitance VGS=0V, VDS=25V, f=1MHz 605 872 1140 pF
Crss Reverse Transfer Capacitance 40 69 98 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.6 3.2 4.8 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 68 85 102 nC
Qgs Gate Source Charge VGS=10V, VDS=30V, ID=20A 19 nC
Qgd Gate Drain Charge 24 nC
tD(on) Turn-On DelayTime 18 ns
tr Turn-On Rise Time VGS=10V, VDS=30V, RL=1.5Ω, 31 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 60 ns
tf Turn-Off Fall Time 14 ns
trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 33 48 63 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 280 411 540 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C. Maximum UIS current limited by test equipment.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package is 120A.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AOT1606L/AOB1606L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 100

10V VDS=5V
80 80
5.5V
5V
60 60
ID (A)

ID(A)
40 40

20 VGS=4.5V 20 125°C 25°C

0 0
0 1 2 3 4 5 0 1 2 3 4 5 6
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

8 2.2

Normalized On-Resistance 2.0

6
1.8 VGS=10V
Ω)

ID=20A
RDS(ON) (mΩ

VGS=10V 1.6 17
4
5
1.4
2
2
1.2 10
1.0

0 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175 200
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C) 0
Voltage (Note E) Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)

15 1.0E+02
ID=20A
1.0E+01
12
1.0E+00
40
125°C
Ω)

9
RDS(ON) (mΩ

125°C 1.0E-01
IS (A)

1.0E-02 25°C
6
25°C 1.0E-03
3
1.0E-04

0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 AOT1606L/AOB1606L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 9000

VDS=20V 7500
8 ID=20A

Capacitance (pF)
6000
VGS (Volts)

6
4500 Ciss
4
3000
Coss
2
1500
Crss
0 0
0 15 30 45 60 75 90 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 9000

TJ(Max)=175°C
100.0 10µs 7500
RDS(ON) 10µs TC=25°C
limited
100µs 6000
ID (Amps)

DC 17
Power (W)

10.0
1ms 5
4500
10ms 2
1.0
3000 10
TJ(Max)=175°C
0.1 TC=25°C
1500

0.0 0
0.01 0.1 1 VDS (Volts)
10 100 1000 0.0001 0.001 0.01 0.1 10 10
Pulse Width (s) 18
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe
Case (Note F)
Operating Area (Note F)

10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC
Thermal Resistance

RθJC=0.36°C/W 40
1

0.1 PD

Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AOT1606L/AOB1606L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

200 500
IAR (A) Peak Avalanche Current

160 400

Power Dissipation (W)

TA=25°C
120 300
TA=150°C TA=100°C
80 200
TA=125°C
40 100

0 0
1 10 100 1000 10000 0 25 50 75 100 125 150 175
µs)
Time in avalanche, tA (µ TCASE (°°C)
Figure 12: Single Pulse Avalanche capability Figure 13: Power De-rating (Note F)
(Note C)

200 10000

TA=25°C
160
1000
Current rating ID(A)

17
Power (W)

120
100
5
2
80
10
10
40

0 1
0 25 50 75 100 125 150 175 0.00001 0.001
0.1 10 01000
TCASE (°°C) Pulse Width (s) 18
Figure 15: Single Pulse Power Rating Junction-to-
Figure 14: Current De-rating (Note F)
Ambient (Note H)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient
Thermal Resistance

1 RθJA=60°C/W 40

0.1

PD
0.01 Single Pulse
Ton
T
0.001
0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

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 AOT1606L/AOB1606L

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds E AR = 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

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