PD -95190

IRG4PH50UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features C

• UltraFast: Optimized for high operating VCES = 1200V

frequencies up to 40 kHz in hard switching,
>200 kHz in resonant mode
• New IGBT design provides tighter VCE(on) typ. = 2.78V
G
parameter distribution and higher efficiency than
previous generations @VGE = 15V, IC = 24A
E
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in n-cha nn el
bridge configurations
• Industry standard TO-247AC package
• Lead-Free
Benefits
• Higher switching frequency capability than
competitive IGBTs
• Highest efficiency available
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing TO-247AC

Absolute Maximum Ratings

Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 1200 V
IC @ TC = 25°C Continuous Collector Current 45
IC @ TC = 100°C Continuous Collector Current 24 A
ICM Pulsed Collector Current Q 180
ILM Clamped Inductive Load Current R 180
IF @ TC = 100°C Diode Continuous Forward Current 16
IFM Diode Maximum Forward Current 180
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25°C Maximum Power Dissipation 200
W
PD @ TC = 100°C Maximum Power Dissipation 78
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case - IGBT ––– ––– 0.64
RθJC Junction-to-Case - Diode ––– ––– 0.83 °C/W
RθCS Case-to-Sink, flat, greased surface ––– 0.24 –––
RθJA Junction-to-Ambient, typical socket mount ––– ––– 40
Wt Weight ––– 6 (0.21) ––– g (oz)
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown VoltageS 1200 — — V VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 1.20 — V/°C VGE = 0V, IC = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage — 2.56 3.5 IC = 20A VGE = 15V
— 2.78 3.7 IC = 24A
— 3.20 — V IC = 45A See Fig. 2, 5
— 2.54 — IC = 24A, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -13 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance T 23 35 — S VCE = 100V, IC = 24A
ICES Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 1200V
— — 6500 VGE = 0V, VCE = 1200V, TJ = 150°C
VFM Diode Forward Voltage Drop — 2.5 3.5 V IC = 16A See Fig. 13
— 2.1 3.0 IC = 16A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) — 160 250 IC = 24A
Qge Gate - Emitter Charge (turn-on) — 27 40 nC VCC = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) — 53 80 VGE = 15V
td(on) Turn-On Delay Time — 47 — TJ = 25°C
tr Rise Time — 24 — ns IC = 24A, VCC = 800V
td(off) Turn-Off Delay Time — 110 170 VGE = 15V, RG = 5.0Ω
tf Fall Time — 180 260 Energy losses include "tail" and
Eon Turn-On Switching Loss — 2.10 — diode reverse recovery.
Eoff Turn-Off Switching Loss — 1.50 — mJ See Fig. 9, 10, 18
Ets Total Switching Loss — 3.60 4.6
td(on) Turn-On Delay Time — 46 — TJ = 150°C, See Fig. 11, 18
tr Rise Time — 27 — ns IC = 24A, VCC = 800V
td(off) Turn-Off Delay Time — 240 — VGE = 15V, RG = 5.0Ω
tf Fall Time — 330 — Energy losses include "tail" and
Ets Total Switching Loss — 6.38 — mJ diode reverse recovery.
LE Internal Emitter Inductance — 13 — nH Measured 5mm from package
Cies Input Capacitance — 3600 — VGE = 0V
Coes Output Capacitance — 160 — pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance — 31 — ƒ = 1.0MHz
trr Diode Reverse Recovery Time — 90 135 ns TJ = 25°C See Fig.
— 164 245 TJ = 125°C 14 IF = 16A
Irr Diode Peak Reverse Recovery Current — 5.8 10 A TJ = 25°C See Fig.
— 8.3 15 TJ = 125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge — 260 675 nC TJ = 25°C See Fig.
— 680 1838 TJ = 125°C 16 di/dt = 200A/µs
di(rec)M/dt Diode Peak Rate of Fall of Recovery — 120 — A/µs TJ = 25°C See Fig.
During tb — 76 — TJ = 125°C 17

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 IRG4PH50UDPbF
30

F o r b o th :
25
D u ty c y c le : 5 0 %
TJ = 1 2 5 ° C
LOAD CURRENT (A)

T sink = 9 0 ° C
20 G a te d riv e a s s p e c ifie d
P o w e r D is s ip a tio n = 40 W
S q u a re w a v e :

15 6 0% of rate d
volta ge

I
10

Id e a l d io d e s
5

0
0.1 1 10 100
f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

1000 1000
I C , Collector-to-Emitter Current (A)

I C, Collector-to-Emitter Current (A)

100 100

TJ = 150 o C


TJ = 150 o C

10 10


TJ = 25 o C 
TJ = 25 o C

1

V GE = 15V
20µs PULSE WIDTH
1

V = 50V
CC
5µs PULSE WIDTH
1 10 5 6 7 8 9 10 11 12
VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

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IRG4PH50UDPbF
50 4.0

VGE = 15V
80 us PULSE WIDTH

IC = 48 A

VCE , Collector-to-Emitter Voltage(V)

Maximum DC Collector Current(A)

40
3.5

30

IC = 24 A
3.0

20


IC = 12 A
2.5
10

0 2.0
25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160
T C , Case Temperature ( ° C) TJ , Junction Temperature ( ° C)

Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature vs. Junction Temperature

0.50
Thermal Response (Z thJC )

0.20
0.1
0.10

0.05


0.02

0.01
0.01
 SINGLE PULSE
(THERMAL RESPONSE)
P DM

t1
t2

0.001

Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC

0.00001 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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7000 20


VGE = 0V, f = 1MHz VCC = 400V
Cies = Cge + Cgc , Cce SHORTED
I C = 24A
6000 Cres = Cgc

VGE , Gate-to-Emitter Voltage (V)

Coes = Cce + Cgc 16
C, Capacitance (pF)

5000

Cies
4000 12

3000
8

2000 C
oes
4
1000 
Cres

0 0
1 10 100 0 40 80 120 160 200
VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC)

Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.

Collector-to-Emitter Voltage Gate-to-Emitter Voltage


5.00 100


V CC = 480V 5.0Ω
RG = Ohm
V GE = 15V VGE = 15V
TJ = 25 ° C VCC = 800V
4.60 I C = 24A
25A
Total Switching Losses (mJ)
Total Switching Losses (mJ)
Total Switching Losses ( mJ)

4.20 
IC = 48 A

10

IC = 24 A
3.80


IC = 12 A

3.40

3.00 1
0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160
Ω
RG , Gate Resistance (Ohm) TJ , Junction Temperature ( °C )

Fig. 9 - Typical Switching Losses vs. Gate Fig. 10 - Typical Switching Losses vs.
Resistance Junction Temperature
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IRG4PH50UDPbF
15


5.0 Ω 1000

RG = Ohm VGE = 20V
TJ = 150 °C
T J = 125 oC
VCC = 480V

I C , Collector-to-Emitter Current (A)

12 VGE = 15V
Total Switching Losses (mJ)

100
9

10
3

0 SAFE OPERATING AREA

0 10 20 30 40 50 1
I C , Collector-to-emitter Current (A) 1 10 100 1000 10000
VCE , Collector-to-Emitter Voltage (V)

Fig. 11 - Typical Switching Losses vs. Fig. 12 - Turn-Off SOA

Collector-to-Emitter Current
1000
Instantaneous Forward Current ( A )

100

T J = 150°C
10
T J = 125°C

T J = 25°C

1
0.0 2.0 4.0 6.0 8.0

F orward V oltage D rop - V F M (V )

Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current

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300 40

VR = 200V VR = 200 V
T J = 125°C T J = 125°C
T J = 25°C T J = 25°C

30

200

IF = 3 2 A

I R R M - (A )
trr - (ns)

I F = 1 6A
I F = 32A
20
I F = 8 .0 A
I F = 16 A

100
I F = 8 .0A
10

0 0
100 1000 100 1000
d i f /dt - (A /µ s) di f /dt - (A /µ s)
Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt
1200 1000
VR = 200V
T J = 125°C VR = 200V
T J = 25°C T J = 125°C
T J = 25°C

900

I F = 32 A
di(rec)M /dt - (A /µ s)
Q R R - (nC )

600 I F = 1 6A 100
I F = 32 A

I F = 8.0A I F =1 6A
I F = 8 .0 A

300

0 10
100 1000 100 1000
di f /dt - (A /µ s) di f /d t - (A /µ s)

Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt
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IRG4PH50UDPbF

Same ty pe
device as
D .U.T.

90%
430µF
80%
of Vce D .U .T. Vge 10%

VC
90%
td(off)

10%
IC 5%
tr tf
Fig. 18a - Test Circuit for Measurement of t d(on) t=5µs
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Eon Eoff
E ts = (Eon +Eoff )

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

Eoff, td(off), tf

trr
G A T E V O L T A G E D .U .T .
Ic
trr
Q rr =
∫
tx
Icddt
id t

1 0 % +V g
+Vg
tx
1 0 % Irr
10% Vcc
V cc
D UT VO LTAG E
Vce
AN D CU RRE NT V pk
Irr
1 0 % Ic
Vcc Ip k
9 0 % Ic
Ic
D IO D E R E C O V E R Y
W A V E FO R M S
5% Vce
td (o n ) tr
t2

t1
∫
E o n = VVce
ce ieIcd t dt
E re c =
t4

∫ Vd Ic dt
V d id d t
t3
t1 t2 D IO D E R E V E R S E
REC OVERY ENER GY

t3 t4

Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr Defining Erec, trr, Qrr, Irr

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V g G A T E S IG N A L
D E V IC E U N D E R T E S T

C U R R E N T D .U .T .

V O L T A G E IN D .U .T .

C U R R E N T IN D 1

t0 t1 t2

Figure 18e. Macro Waveforms for Figure 18a's Test Circuit

L D.U.T. 800V
RL=
4 X I C @25°C
1000V Vc* 0 - 800V
50V
600 0µF
100V

Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current
Test Circuit

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IRG4PH50UDPbF
Notes:
Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature
(figure 20)
R VCC=80%(VCES), VGE=20V, L=10µH, RG= 5.0Ω (figure 19)
S Pulse width ≤ 80µs; duty factor ≤ 0.1%.
T Pulse width 5.0µs, single shot.

TO-247AC Package Outline

Dimensions are shown in millimeters (inches)

TO-247AC Part Marking Information

EXAMPLE: T HIS IS AN IRFPE30
WITH AS SEMBLY PART NUMBER
LOT CODE 5657 INTERNAT IONAL
AS SEMBLED ON WW 35, 2000 RECTIFIER IRFPE30

IN THE AS SEMBLY LINE "H" LOGO 035H

56 57
Note: "P" in assembly line DAT E CODE
position indicates "Lead-Free" AS SEMBLY YEAR 0 = 2000
LOT CODE WEEK 35
LINE H

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 04/04
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/