Millimeter-Wave Technology

Assignment VI (20×1)

 Choose the most appropriate answer.

 All symbols have their usual meaning.

Q1. Which of the following is a Cross field tube device?

a) Klystron
b) Magnetron
c) Vacuum Triodes
d) Pentodes
Please go through week 6 presentation slide 2 and related lecture/ discussions for
better understanding

Q2. Which of the following is not a type of Solid state device?

a) BJT
b) FET
c) HEMT
d) Pentodes
Please go through week 6 presentation slide 2 and related lecture/ discussions for
better understanding

Q3) Which of the following do you think creates a problem for the MOSFET at the millimeter-
wave (MMW) frequencies?
a) significant gate to source parasitic capacitance
b) significant gate to source parasitic inductance
c) significant gate-source and gate-drain parasitic capacitances
d) significant parasitic inductances at the all terminals
Please go through week 6 presentation slides 49˗50 and related lecture/ discussions
for better understanding

Q4) The device for which the thickness of the depletion region under reverse bias is varied
for capacitance variation is
a) Light emitting diode
b) Varactor diode
c) Thermistor
d) IMPATT diode
Please go through week 6 presentation slide 7 and related lecture/ discussions for
better understanding

Q5) One of the major application of Impatt diode is

a) Transmitter Amplifier
b) Tuning
 c) Phase Shifter
d) Modulator
Please go through week 6 presentation slide 7 and related lecture/ discussions for
better understanding

Q6) Which of the following is not the way to make a BJT-

a) Diffusion
b) Ion Implantation
c) Electrostatic fusion
d) Molecular Beam Epitaxy
Please go through week 6 presentation slide 11 and related lecture/ discussions for
better understanding

Q7) The transistor for which two different barrier height is created for its two pn junctions is
a) HEMT (High electron mobility transistor)
b) HBT (Heterojunction Bipolar Transistor)
c) Thyristor
d) MESFET (metal-semiconductor FET)
Please go through week 6 presentation slide 16 and related lecture/ discussions for
better understanding

Q8) Typical forward voltage drop of Schottky diode is between

a) 0.7˗1 V
b) 0.7˗1.7 V
c) 0.4˗0.7 V
d) 0.1˗0.4 V
Please go through week 6 presentation slide 20 and related lecture/ discussions for
better understanding

Q9) Transferred Electron Devices have

a) 1 PN junction
b) 2 PN junction
c) 3 PN Junction
d) No PN Junction
Please go through week 6 presentation slide 28 and related lecture/ discussions for
better understanding

Q10) Avalanche transit time devices rely on

a) Voltage breakdown across reverse biased pn junction
b) Current breakdown across reverse biased pn junction
c) Voltage breakdown across forward biased pn junction
d) None of the above
Please go through week 6 presentation slide 39 and related lecture/ discussions for
better understanding
Q11) The efficiency in TRAPATT mode of operation is typically
a) 20-60%
b) 5-10%
c) 70-90%
d) 25-40%
Please go through week 6 presentation slide 39 and related lecture/ discussions for
better understanding

Q12) In the following device, only one type of charge carriers are involved in current flow.
a) HEMT (High electron mobility transistor)
b) HBT (Heterojunction Bipolar Transistor)
c) PIN diode
d) Varactor diode
Please go through week 6 presentation slide 44 and related lecture/ discussions for
better understanding

Q13) FET is
a) Voltage controlled as it depends on VGS
b) Current controlled as it depends on ID
c) Voltage controlled as it depends on VTH
d) All of the above
Please go through week 6 presentation slide 44 and related lecture/ discussions for
better understanding

Q14) When a MESFET is used as an amplifier, the drain current ID is given by

a) ID = IDSS (1-(VP/VGS))2
b) ID = IDSS (1-(|VGS|/VP))2
c) ID = IDSS (1+(|VGS|/VP))2
d) ID = IDSS (1-(VGS/VP))
Please go through week 6 presentation slide 45 and related lecture/ discussions for
better understanding

Q15) When the gate to source voltage of a depletion type RF n-MOSFET is less than the
pinch off voltage, drain current is of the order of
a) 100 mA
b) 0
c) 1 mA
d) 10 mA
When the gate to source voltage is less than pinch off, both of the junctions will be
reverse biased and channel is not formed. Hence, no current flows.

Q16) MOSFET behaves as a voltage-controlled resistor in the following region.

a) cutoff
 b) triode
c) saturation
d) both b and c
Please look at the slope of output characteristics in slide 44.

Q17) The device that improves mobility by avoiding scattering from the doping agent by
using highly doped n-channel to create 2D electron gas is
a) HBT
b) MESFET
c) HEMT
d) SCR
Please look at slide 51.

Q18) The following device utilizes the property of negative resistance for amplification.
a) GUNN diode
b) IMPATT diode
c) BARITT diode
d) All of the above
Please look at slide 28 and 39.

Q19) Among the following C-MOS technological nodes that would provide the best device
performance at 60 GHz is
a) A 180 nm node n-MOS
b) A 180 nm node p-MOS
c) A 65 nm node n-MOS
d) A 65 nm node p-MOS
The dimensions are the smallest gate width that can be fabricated in that
fabrication process. Now, transit time must be small as the frequency increases.
Therefore, lower node provide higher unity gain frequency fT. Further, electron
mobility is higher than the hole mobility.

Q20) The output characteristics of a MOSFET with low values of Vds, the value of the on-
state resistance is
a) Vds/Id
b) 0
c) Vds/Ig
d) Infinity
The o/p characteristics is a plot of Id verses Vds, which for low values of Vds is almost
constant. Hence, the on-state resistance is constant & the slop is its constant value.
Please look at the slope of output characteristics in slide 44.