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® X00605MA

SENSITIVE GATE SCR

FEATURES
n IT(RMS) = 0.8A A K
n Sensitive gate : IGT min = 30 µA
G
: IGTmax = 60 µA
n VDRM/VRRM = 600 V
n Low holding current : IH < 5 mA

DESCRIPTION K
G
A
The X00605MA SCR uses a high performance
glass passivated PNPN technology. This device is
perfectly suited for applications requiring very low TO-92
gate sensitivity such as sensors, detectors, pilot (Plastic)
for larger thyristors, Ground Fault Interruptor
(GFI), small motor control, relay drivers, etc...

ABSOLUTE RATINGS (limiting values)

Symbol Parameter Value Unit


VDRM Repetitive peak off-state voltage Tj = 125°C 600 V
VRRM RGK = 1KΩ
IT(RMS) RMS on-state current Tl= 85°C 0.8 A
(180° conduction angle)
IT(AV) Average on-state current Tl= 85°C 0.5 A
(180° conduction angle)
ITSM Non repetitive surge peak on-state current tp = 8.3 ms 10 A
(Tj initial = 25°C )
tp = 10 ms 9
2 2
I t I t Value for fusing tp = 10 ms 0.5 A2s
dI/dt Critical rate of rise of on-state current 50 A/µs
IG = 10 mA diG /dt = 0.1 A/µs.
Tstg Storage temperature range - 40, + 150 °C
Tj Operating junction temperature range - 40, + 125
Tl Maximum lead temperature for soldering during 10s at 260 °C
2mm from case

July 2000 - Ed: 1 1/5

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X00605MA
THERMAL RESISTANCES

Symbol Parameter Value Unit

Rth(j-a) Junction to ambient 150 °C/W

Rth(j-l) Junction to lead for DC 70 °C/W

GATE CHARACTERISTICS
PG (AV)= 0.1W PGM = 2W (tp = 20µs) IGM = 1A (tp = 20µs)

ELECTRICAL CHARACTERISTICS

Symbol Test Conditions Value Unit

IGT VD=12V (DC) RL=140Ω Tj= 25°C MIN. 30 µA

MAX. 60

VGT VD=12V (DC) RL=140Ω Tj= 25°C MAX. 0.8 V

VGD VD = VDRM RL = 33KΩ RGK = 1 KΩ Tj= 125°C MIN. 0.2 V

VRG IRG =10µA Tj= 25°C MIN. 5 V

IH IT= 50mA RGK = 1 KΩ Tj= 25°C MAX. 5 mA

IL IG= 500µA RGK = 1 KΩ Tj= 25°C MAX. 6 mA

VTM ITM= 1A tp= 380µs Tj= 25°C MAX. 1.35 V

IDRM VD = VDRM RGK = 1 KΩ Tj= 25°C MAX. 1 µA


IRRM VR = VRRM
Tj= 125°C MAX. 100 µA

dV/dt VD= 67%VDRM RGK = 1 KΩ Tj= 125°C MIN. 25 V/µs

ORDERING INFORMATION

X 006 05 M A
SCR TOP GLASS PACKAGE :
A = TO-92

CURRENT SENSITIVITY VOLTAGE


M = 600V

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X00605MA
Fig. 1: Maximum average power dissipation Fig. 2: Correlation between maximum average
versus average on-state current. power dissipation and maximum allowable
temperature (Tamb and Tlead).

P(W)
0.65 P(W) Tlead (°C)
α=120° α=180° 0.65
0.60 α=90°
0.60 α=180°
α=60° Rth(j-a)=Rth(j-l)
0.55 0.55 85
0.50 α=30° D.C. 0.50
0.45 0.45
0.40 0.40 95
0.35 0.35 Rth(j-a)=150°C/W
0.30 0.30
0.25 105
0.25
0.20 0.20
360° 0.15
0.15 115
0.10
0.10 0.05 Tamb(°C)
0.05 IT(av)(A) α 0.00 125
0.00 0 25 50 75 100 125
0.0 0.1 0.2 0.3 0.4 0.5 0.6

Fig. 3-1: Average and D.C on-state current versus Fig. 3-2: Average and D.C on-state current versus
lead temperature. ambient temperature (device mounted on FR4
with recommended pad layout).

IT(av)(A) IT(av)(A)
1.1 D.C.
1.0
1.0 0.9
0.9 0.8 D.C.

0.8 0.7
0.7 0.6 α=180°
0.6
α=180° 0.5
0.5
0.4
0.4
0.3 0.3
0.2 0.2
0.1 Tlead(°C) 0.1 Tamb(°C)
0.0 0.0
0 25 50 75 100 125 0 25 50 75 100 125

Fig. 4: Relative variation of thermal impedance Fig. 5: Relative variation of gate trigger current
junction to ambient versus pulse duration. and holding current versus junction temperature.

K=[Zth(j-a)/Rth(j-a)] IGT,IH[Tj] / IGT,IH[Tj=25°C]


1.00 1.6
1.4
1.2
1.0
0.10 0.8
IH
0.6 IGT

0.4
0.2
tp(s) Tj(°C)
0.01 0.0
1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 -40 -20 0 20 40 60 80 100 120 140

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X00605MA
Fig. 6: Relative variation of holding current versus Fig. 7: Relative variation of dV/dt immunity versus
gate-cathode resistance (typical values). gate-cathode resistance (typical values).

IH[Rgk] / IH[Rgk=1k Ω] dV/dt[Rgk] / dV/dt[Rgk=1kΩ]


3.5 1E+2
Tj=25°C Tj=125°C
VD=0.67xVDRM
3.0
VD=VDRM
1E+1
2.5

2.0
1E+0
1.5

1.0 1E-1
0.5
Rgk(kΩ) Rgk(kΩ)
0.0 1E-2
1E-2 1E-1 1E+0 1E+1 1E+2 1E-2 1E-1 1E+0 1E+1

Fig. 8: Relative variation of dV/dt immunity versus Fig. 9: Non repetitive surge peak on-state current
additionnal gate-cathode capacitance (typical versus number of cycles.
values).
dV/dt[Cgk] / dV/dt [Rgk=1kΩ]
20 ITSM(A)
Tj=125°C 10
Rgk=1kΩ Tj initial=25°C
9 F=50Hz

10 8
7
VD=0.67xVDRM 6
5
VD=VDRM
5
4
3
2 2
1 Number of cycles
Cgk(nF) 0
1 1 10 100 1000
1 2 5 10

Fig. 10: Non repetitive surge peak on-state Fig. 11: On-state characteristics (maximum values).
current for a sinusoidal pulse with width : tp 
10ms, and corresponding value of I2t.

ITSM(A),I²t(A²s) ITM(A)
50.0 1E+1
Tj max.:
Tj initial=25°C Vto=0.83V
ITSM
Rt=245mΩ
10.0
1E+0

Tj=Tj max.

1.0
1E-1 Tj=25°C
I²t

tp(ms) VTM(V)
0.1 1E-2
1 2 5 10 0.5 1.0 1.5 2.0 2.5 3.0 3.5

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X00605MA

PACKAGE MECHANICAL DATA


TO-92 (Plastic)

DIMENSIONS
REF. Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A
a A 1.35 0.053
B 4.70 0.185
B C
C 2.54 0.100
D 4.40 0.173
F D E E 12.70 0.500
F 3.70 0.146
a 0.45 0.017

Ordering type Marking Package Weight Base qty Delivery mode

X00605MA 1AA2 X0605MA TO-92 0.2g. 2500 Bulk

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
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© 2000 STMicroelectronics - Printed in Italy - All rights reserved.
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