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Sensitive Gate SCR: Features
Sensitive Gate SCR: Features
FEATURES
n IT(RMS) = 0.8A A K
n Sensitive gate : IGT min = 30 µA
G
: IGTmax = 60 µA
n VDRM/VRRM = 600 V
n Low holding current : IH < 5 mA
DESCRIPTION K
G
A
The X00605MA SCR uses a high performance
glass passivated PNPN technology. This device is
perfectly suited for applications requiring very low TO-92
gate sensitivity such as sensors, detectors, pilot (Plastic)
for larger thyristors, Ground Fault Interruptor
(GFI), small motor control, relay drivers, etc...
GATE CHARACTERISTICS
PG (AV)= 0.1W PGM = 2W (tp = 20µs) IGM = 1A (tp = 20µs)
ELECTRICAL CHARACTERISTICS
MAX. 60
ORDERING INFORMATION
X 006 05 M A
SCR TOP GLASS PACKAGE :
A = TO-92
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P(W)
0.65 P(W) Tlead (°C)
α=120° α=180° 0.65
0.60 α=90°
0.60 α=180°
α=60° Rth(j-a)=Rth(j-l)
0.55 0.55 85
0.50 α=30° D.C. 0.50
0.45 0.45
0.40 0.40 95
0.35 0.35 Rth(j-a)=150°C/W
0.30 0.30
0.25 105
0.25
0.20 0.20
360° 0.15
0.15 115
0.10
0.10 0.05 Tamb(°C)
0.05 IT(av)(A) α 0.00 125
0.00 0 25 50 75 100 125
0.0 0.1 0.2 0.3 0.4 0.5 0.6
Fig. 3-1: Average and D.C on-state current versus Fig. 3-2: Average and D.C on-state current versus
lead temperature. ambient temperature (device mounted on FR4
with recommended pad layout).
IT(av)(A) IT(av)(A)
1.1 D.C.
1.0
1.0 0.9
0.9 0.8 D.C.
0.8 0.7
0.7 0.6 α=180°
0.6
α=180° 0.5
0.5
0.4
0.4
0.3 0.3
0.2 0.2
0.1 Tlead(°C) 0.1 Tamb(°C)
0.0 0.0
0 25 50 75 100 125 0 25 50 75 100 125
Fig. 4: Relative variation of thermal impedance Fig. 5: Relative variation of gate trigger current
junction to ambient versus pulse duration. and holding current versus junction temperature.
0.4
0.2
tp(s) Tj(°C)
0.01 0.0
1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 -40 -20 0 20 40 60 80 100 120 140
3/5
2.0
1E+0
1.5
1.0 1E-1
0.5
Rgk(kΩ) Rgk(kΩ)
0.0 1E-2
1E-2 1E-1 1E+0 1E+1 1E+2 1E-2 1E-1 1E+0 1E+1
Fig. 8: Relative variation of dV/dt immunity versus Fig. 9: Non repetitive surge peak on-state current
additionnal gate-cathode capacitance (typical versus number of cycles.
values).
dV/dt[Cgk] / dV/dt [Rgk=1kΩ]
20 ITSM(A)
Tj=125°C 10
Rgk=1kΩ Tj initial=25°C
9 F=50Hz
10 8
7
VD=0.67xVDRM 6
5
VD=VDRM
5
4
3
2 2
1 Number of cycles
Cgk(nF) 0
1 1 10 100 1000
1 2 5 10
Fig. 10: Non repetitive surge peak on-state Fig. 11: On-state characteristics (maximum values).
current for a sinusoidal pulse with width : tp
10ms, and corresponding value of I2t.
ITSM(A),I²t(A²s) ITM(A)
50.0 1E+1
Tj max.:
Tj initial=25°C Vto=0.83V
ITSM
Rt=245mΩ
10.0
1E+0
Tj=Tj max.
1.0
1E-1 Tj=25°C
I²t
tp(ms) VTM(V)
0.1 1E-2
1 2 5 10 0.5 1.0 1.5 2.0 2.5 3.0 3.5
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DIMENSIONS
REF. Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A
a A 1.35 0.053
B 4.70 0.185
B C
C 2.54 0.100
D 4.40 0.173
F D E E 12.70 0.500
F 3.70 0.146
a 0.45 0.017
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