Microwave

ELECTRONICS AND
Engineering
COMMUNICATIONS
Chapter 4

Introduction to Microwave Amplifier Design

Cuong Huynh, PhD

hpmcuong@hcmut.edu.vn
 Introduction
Why do we need microwave amplifiers ?

Signal In

Transmitter

Signal Out

Receiver

Are different Microwave amplifiers are differently designed ?

2
 Introduction
60-GHz MM-wave WPAN &
Wireless-HD Applications
Communication
Satolllte
- -.l! ed link Systems

UMTS / 3G Spectrum
UWB

(b)

Ku/I(:, band
Fdt um fi k:
Satelrrt e
DV'a-RCS 2

forw,ud link:
DVB-S2/S3

Gen. VSAT SysteM

Cihannel Adapli1-1e Satellite Broadcasting

 Introduction

Cellular Communication System

 Introduction
 Signal amplification is one of the most basic and prevalent circuit
functions in modern RF and microwave systems.
 Early microwave amplifiers relied on tubes, such as klystrons and

traveling-wave tubes.
 However, due to the dramatic improvements and innovations in

solid-state technology that have occurred since the 1970s, most RF

and microwave amplifiers today use transistor devices such as Si
BJTs, GaAs or SiGe HBTs, Si MOSFETs, GaAs MESFETs, or
GaAs or GaN HEMTs .
 Although microwave tubes are still useful for very high power

and/or very high frequency applications, continuing improvement in

the performance of microwave transistors is steadily reducing the
need for microwave tubes.
 Microwave transistor amplifiers can be easily integrated in both

hybrid and monolithic integrated circuitry. 5

 Microwave technology
Target: smaller size, lighter weight, lower power requirements, lower
cost, and increased complexity.

Microwave integrated circuits (MICs) Technology replace bulky and

expensive waveguide and coaxial components with small and inexpensive planar
components.
MIC technology has advanced to the point where complete microwave
subsystems, such as receiver front ends and radar transmit/receive modules, can
be integrated on a chip that is only a few square millimeters in size.

Hybrid MIC
MIC
MMIC/RFIC
Hybrid Microwave Integrated Circuits
Monolithic Microwave Integrated
Circuits Radio Frequency Integrated
Microwave technology
Circuits
Hybrid MIC MMIC/RFIC

MMIC/RFIC Application
Microwave Amplifiers
2.4 GHz Transceiver RF Front-end
Microwave Amplifiers
Microwave Transistors

Low power microwave transistor

High power microwave transistor
High power microwave transistor
 Microwave Transistors

.- -- - '
. .- ..
_ , ,
... - -A •
-- -®-
Typical Package S-Parameters for CGH40006P
(Small Signal, V0 5 = 28 V, I 0
Q = 100 mA, angle in degrees)

Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22

500 MHz 0.905 -96.56 18.30 120.62 0.023 35.87 0.456 -52.76
600 MH z 0.889 -107.98 16.39 113.31 0.025 29.63 0.4 29 -58 .98
700 MHz 0 .8 77 -11 7 .55 14.76 106.99 0.026 24.39 0.408 -64.31
800 MHz 0.867 -125.66 13.37 101.43 0.027 19.92 0.393 -68.96
900 MHz 0.860 -132.61 12.19 96.46 0.028 16.05 0.381 -73.11
1.0 GH z 0.854 -138 .66 11. 18 91.94 0.028 12.66 0.374 -76 .87
1.1 GHz 0.849 -143.98 10.31 87.79 0.028 9.64 0.368 -80.34
1.2 GHz 0.845 -148.73 9.56 83.92 0.028 6.92 0.366 -83.57
1.3 GHz 0.842 -153 .01 8.90 80 .29 0.028 4.4 6 0.365 -86.61
1.4 GHz 0.839 -156 .90 8.33 76.84 0.028 2.22 0.365 -89.49
1.5 GHz 0.837 -160.49 7.82 73.56 0.028 0.15 0.367 -92.24
1.6 GHz 0.835 -163.81 7.37 70.40 0.028 -1.75 0.369 -94.88
1.7 GHz 0.833 -166.92 6.96 67.36 0.028 -3.51 0.373 -97.43
1.8 GHz 0.832 -169 .85 6.60 64.41 0.028 -5 .15 0.376 -99 .88
1.9 GHz 0.830 -172.62 6.27 61.54 0.028 -6.67 0.381 -102.27
2.0 GHz 0.829 -175.27 5.98 58.74 0.028 -8.08 0.386 -104.58
Transducer Power Gain (GT ) &
Stability

14
Definition of Two-Port Power Gains

A two-port network with arbitrary source and load impedances.

Transducer power gain = GT = PL/Pavs is the ratio of the power delivered to the
load to the power available from the source. This depends on both ZS and ZL.

GT  PL
Coâng suaát tieâu thuï treân taûi
Coâng suaát khaû duïng coùtheå cung caáp töø  Pavs
nguoàn
Pavs 
in *S
Pin
Definition of Two-Port Power Gains

 
V V
1 S 1
Definition of Two-Port Power Gains
where (12.. ) wa u ;. ed .. The JPOWer de lliv e re d to the load is

,(12.6)

Sol ·ing for v- frorn (12..2b) , su bstit uting into (12..6) am1:rnl using (I 2.4)
2 gives

,(12..7)

2
PL I S211 (m ·- 1r L1- ,(12.8)
G - -- - ---------
- Pm- (1 - 1 r m1)2 ) II ·- 12
2 2 f' L -

The powier a ailabie from 1Jh e 011.uce , Pa, , is 1Jhe 1naocin1u111 power that can be delliv
ere d to the netw"ork .. Thi occuii·s wlt en the input impedance of d1e tenninated netvvork is
co11i1. .ju gately 1nartc.hed to t he otu"Ce iln pedance, as discus sed in Section 2.6. TI1u fro1n
(12..5

,(12.9)

,.
 ==pavs
Transducer Power Gain (GT ) & Stability
Definition of Two-Port Power Gains

S) 2
(1   2 )(1   2
S12 S21L
G  21 S L in  S 
11

T 1  S 2 2 1  L
1  LS22
in  S22
S 2 (1   2 )(1   2 S S 
)
 21 S L out  S
G  22  12 21 S

T
1  2 1  S
2
1 Lout
 S

S11
S11
Power Gain Calculation
Transducer Power Gain (GT ) &
Stability

  S12   S12 S21S

S 
S21L S 
out
1 L 1 S S11
in 11 22

S22

Transducer Power Gain (GT ) &
Stability

21
Will be considered more detail in another class !
22
0 RF Amplifier : laximum Gain (Conjugate Matching)
• After the stabi lity of the transistor has been dete:n n i ned, the stable re2ion
for rs r
& L been located on the Sm.nith chatt
• the input & output matching netw orks can be designed..

Zo
Input 1n atc hing Output
Transistor .. ..,_ ..,.
circuit 1n atch ing circuit
[S]
Gs
Go Gr

-r m fout

laximum gain => conjugate matching for I's to r;n & rL to Taut

=>
sr & rL can. be so l •. e(l as

• F o1r u nilateral case: S12 == 0

GT_- 1-IS 12 l
1 1 - s1 il221II - S22 l
TUmax- 2
 EX: Coniugately 1Vl atched Amplifier Design (Pozar RF Ex 6-3 P2os) (Ludwig P494)
Design an a1n plifier for maximum gain at 4..0 GHz using single-stub matching
sections. The GaAs FET ha ' the follovving S para1ne ter · (Z0=50 0):
f (GHz) S11 S21 S12 S22
3.0 0.80L - 89° 2..86L 99° 0.03L56° O.76L - 41°
4.. 0 O.72L - 116° 2..60L 76° 0.03L57° O.73L - 54°
5.0 0.66L - 142° 2.3 9L 54° 0.03L62° 0.72 L 68°
-

<Sol ution>
(1) First check the stability of the transistor by calculating Ll and K at 4.0 GH z:

= s· 1 1 S _2- S1 2 S· 2 1== 0.488L -162°1 1 < 1

== 1+1 21 -I S1l21 -I S2221== 1.195K> l
1 8 12 8 211 (How abo ut at 3 GHz 5 GHz ?)
1- 1 8 111 2 -
or µ == * _ == l . 04
S22-S11+ IS21S\2I
=> Unconditional sta ble at 4.0 l.iHz. o need to plot the stability circles.
(2) ) For maximum gain, v;.re should design the 1natching sections for a
conjugate match to the transistor.

Input matching circuit Tran. i. tor ---

Output matching circuit
Gs
---
[SJ

(3) Maximum gain: GT111ax- - 1 1I r 1 s2211 2Ii 1-- 1r1 2

. I -?-
-G GG
SO L
S22r
L
- 51

G8
. 1 1- - 4 ..17 = 6.20dB
r1 2
=

sl
G0 = IS 21I 2 = 6.76 = 8.30 dB
=> overall t1"ansducer gain will be I Gr. = 6.20 + 8.30 + 222 = 16.7 dB i
. max .
 Lengtho!oo
open- circu
stub 0. ·

Length of
seri s line
0.120A
 Input matching circu it Output matching circui t
--- Transistor ---
Gs GL
[S] Zo
G0

f' ·U1

.-----
I
FEI 0.2061
500

--- (n1icrostrip)
I transn1ission line

16.7 dB
== rL == 0.876L61°
*
f" ut

-10

4 .0 4.S 5,0
Frequency (G Hz)
* Matching ·, vith L111np e d Ele1ne nts (L-sectiou net,vork) (Pozar RF P . 08)
1

2 4..19nH 4
son 3 1.. 63nH ]
50.f!
1..3l p:FI
2..54pF ....1. . .1 ....

lo rs
--=:::'._-
. -
U1
r
0
Ol:f ·
rr
_ 0

rs == 0.8 2L ] 2 - r in == r ; == o.8 L - 123° == 4.4- - )'26.9

i'
{ rL
r u t == r; == 0.8 - 61° == 1 2 .68 - }83 .50
== 0 .8 6L
61°
 2,.4 G Hz Hybrid LNA (BJIT )
Vee = 5 V

RFC
5.6 K f.!
6.2K.£! l pF
RF iinput

o-r
__4- __ 47GHz 4 pF

.1 0 p F _I_ l. 2K.£!

+5V
IN OUT

fa t Cilllbration
tb} l\lleasurement
 V-band 0.13-µm CMOS LNA

! !
!
Vooo=1. 2 V
Yooo=1.2V +
VoD1 =1. 2 V +
+ RF Output

.., .
I Input matching network
• PAD DC 160um
R °" (L

l +

l
Vo,=.16

-
+ V
+ Vai=1.6V
v ,0= 1.
V
6
l
3-dB BW = 6 GHz
-0- Meas. S21
.....Meas. NF
30

25

15

10

5 20
iii' z
...
"Tl
0 15 C::
N
(J)

-5 10
-
OJ

- 5
10

- 1 5 - 40 - - 4-5
- - - 0 5- 5 - - - 60- - - -65 - - - 70
50- - -
RF frequency (GHz)
C I O S RF Front -end Cir cuits fo1· .a 5 7GHz Dual-Conver sion
Re,ceiver
r-----------------------------
1

Vdd Vdd

)
l!F_OUI+
r-------------,
I ■ bmtd-wire and pad I
2.51iH O.B Ohm

lxmd ruit

..LD.005pF

) ( pad equivel nt cin", :11·i:i

RF INl. RF. JN., 6250hm
 Problems

Microwave Engineering, Pozar

10.1
10.2
10.3
10.11