ORIGINAL PAPER

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Influence of Undoped-AlGaN Final Barrier of MQWs on

the Performance of Lateral-Type UVB LEDs
Muhammad Ajmal Khan,* Eriko Matsuura, Yukio Kashima, and Hideki Hirayama

of high threading dislocation densities

Aluminium gallium nitride (AlGaN)-based ultraviolet-B light-emitting diodes (TDDs
1010 cm2) in the AlGaN buffer
(UVB LEDs) are expected to offer smart size, wider choice of UVB light emission layer (BL) grown on sapphire substrate,
in the wavelengths range of 280 nm > λ > 320 nm, and low cost as well as low which is caused by large lattice mismatch

16% at the interface of sapphire substrate
power consumption compared with other UV light sources including toxic
and BL, have presented a big challenge
mercury UV-lamps. The hole-tunneling from p-AlGaN side of UVB LED into the for many researchers.[7,8,11–14] In 1971,
multi-quantum-wells (MQWs) is strongly dependent on the thickness (TFB) and Manasevit et al.[15] successfully grown
Al-contents of undoped (ud)-AlGaN final barrier (FB). Herein, the photolumi- GaN and AlN by using metal-organic
nescence (PL) efficiency from MQWs of the UVB LED devices is investigated and chemical vapor deposition (MOCVD).
Initially, some other groups also attempted
compared with the electroluminescence (EL) spectra as a function of TFB.
to the crystal growth of bulk AlN single
Subsequently, the dependence of PL efficiency, external quantum efficiency crystal for the applications of AlGaN-based
(EQE), and light output power on the TFB of UVB LEDs is attempted, using the optoelectronic devices.[8,13,16] However,
same growth condition for all samples except variation in TFB. When TFB is set to due to the high cost as well as due to the
6–7 nm, improvements in the EQE and light output power, respectively, from issue of low transmittance of UV-light
4.3% and 7 mW to the high values of 5.6% and 17 mW in emission band of through the bulk AlN substrate, several
researchers preferred to grow AlGaN-based
295–300 nm under continuous-wave (cw) at room temperature (RT) are achieved.
UV LEDs either on AlN template on sap-
phire substrate or to grow it on high-
temperature annealing (HTA) of sputtered
AlN template.[7,8,14,17,18] The crystal quality
1. Introduction of AlN template grown on c-(0001) sapphire substrates was
reasonably improved (total-TDDs
5108 cm2) by our group,
Low cost, smart, safe, and low power consumption aluminium using a well-known technique of “ammonia (NH3) pulsed-flow
gallium nitride (AlGaN)-based ultraviolet-B light-emitting diodes multilayer (ML) growth.”[7,8,13,14] But still the epitaxial growth
(UVB LEDs), compared with the other UV light sources includ- of AlGaN on an AlN template can have a lattice mismatch as large
ing toxic mercury UV-Lamps, are needed for real-world applica- as
4%, depending on the molar ratio of the Al-contents in the
tions, such as those in immunotherapy (psoriasis, vitiligo), grown layer. However, the performances of AlGaN-based UVA
vulgaris treatment, plant growth under UVB lightning, the pro- and UVB LED devices grown on AlN template on sapphire
duction of vitamin D3 in the human body, and the production of substrates are still very low, due to the UVB emissions in the
phytochemicals in green leaves of vegetables.[1–10] Based on these challenging wavelength ranges under 340 nm.[19–22] Engineering
motivations, we began our research and development of AlGaN- of UVB light emission based on the Al composition around 40%
based UVB LED devices to be grown on aluminum nitride (AlN) in AlGaN is quite challenging due to the complex growth issues
template, with medical science (294–310 nm) as well as agricul- in MOCVD. Such complex growth of AlGaN might be caused
tural applications (310 nm) in mind.[1–10] However, the existence either by kinetic separation as well as 3D growth-mode, which
is further associated with the Ga-rich localized energy states
or due to the existence of vertically propagating TDDs in the
Dr. M. Ajmal Khan, E. Matsuura, Y. Kashima, Dr. H. Hirayama
RIKEN Cluster for Pioneering Research
n-AlGaN electron injection layer (EIL) underneath the multi-
2-1 Hirosawa, Wako, Saitama 351-0198, Japan quantum-wells (MQWs).[19–25]
E-mail: muhammad.khan@riken.jp Some research groups reported about the AlGaN-based UVB
Dr. M. Ajmal Khan, Dr. H. Hirayama LED devices, either grown on an AlN template or on HTA-
RIKEN Center for Advanced Photonics (RAP) sputtered AlN template, where the maximum light output power
2-1 Hirosawa, Wako, Saitama 351-0198, Japan remains restricted to the range of 2.9 mW at 250 mA and 18 mW
E. Matsuura, Y. Kashima at 500 mA, respectively, with a maximum external quantum effi-
Marubun Corporation ciency (EQE) of 1.8% at emission band of 290–310 nm (excluding
Chuo, Tokyo 109-8577, Japan
the data from company catalog, where we cannot access to their
The ORCID identification number(s) for the author(s) of this article device structure’s information as well as growth conditions).[26–28]
can be found under https://doi.org/10.1002/pssa.201900185. After the reduction of TDDs (total-TDDs
1  109 cm2) in the
DOI: 10.1002/pssa.201900185 n-AlGaN EIL underneath the MQWs region leads us to a

Phys. Status Solidi A 2019, 216, 1900185 1900185 (1 of 9) © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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significant increase in the internal quantum efficiency (IQE) up
to 47% from the AlGaN MQWs of UVB LED, which is measured
by the method given in previous study.[29] Subsequently, EQE of
4.4% as well as maximum light output power of 13 mW at 100 mA
from 295 nm-band UVB LED was achieved.[30,31] But, in our pre-
vious work of UVB LED for the emission band of 295–310 nm, the
influence of ud-AlGaN FB thickness (TFB) and its Al-contents on
the hole injection (tunneling) in to the MQWs as well as on the
suppression of Mg-diffusion from multi-quantum-barrier electron
blocking layer (MQB-EBL) toward the MQWs were not stud-
ied,[30,31] as shown in the schematic view of Figure 1a–c.
(a)
Conventional Ni/Au New Ni/Al
290-300nm-
UVB LED
(sample A-D)
p-AlGaN twofold MQB-EB Valley~12nm
In-Dot
ud-AlGaN FB ( TFB ): 4, 6, 8, 10nm
Al0.32Ga0.68N (QW) / Al0.47Ga0.53N (QWB)
MQWs
This Work
30% Relaxed n-Al0.47Ga0.53N(EIL)~200 nm
24% Relaxed n-Al0.55Ga0.45N-BL1 ~ 1.7 µm
AlN~4µm
C-Sapphire substrate
(b)
(c)
Figure 1. a) Schematic cross-sectional image of an AlGaN-based UVB LED
fabricated on a ML-AlN template on sapphire substrate. b) Schematic
view of the energy band diagram of the previous UVB LED at 294 nm emis-
sion with un-optimized ud-AlGaN FB, and c) proposed energy
band diagram model, to explain the hole migration (hole tunnelling)
from the p-AlGaN side via optimized ud-AlGaN FB toward the MQWs
(this work).
Phys. Status Solidi A 2019, 216, 1900185
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Therefore, in this work, the influence of ud-AlGaN FB both in
terms of potential barrier heights (as a function of Al-contents)
as well as TFB on the enhancement of photoluminescence (PL)
spectral emission, electroluminescence (EL) spectral emission,
EQE, and light output power of the AlGaN-based lateral-type
(Lat)-UVB LEDs was investigated, as shown in the schematic view
of Figure 1c. Especially the hole tunneling from MQB-EBL toward
the MQWs via suitable TFB is very critical, and at the same time,
the suppression of Mg-diffusion from the p-side of MQB-EBL
toward the MQWs of Lat-UVB LED is extremely inevitable.
2. Experimental Section
To grow AlGaN-based Lat-UVB LED devices on AlN template,
first an AlN template layer was grown on c-plane of sapphire
substrate, using well known, ammonia (NH3) pulsed-flow ML
growth method in low-pressure (LP) MOCVD reactor (SR-
4000). Subsequently, a well baked and H-purifier-assisted LP-
MOCVD reactor were used for the growth of Lat-UVB LEDs
devices, as shown in the schematic view of Figure 1a.
Trimethylgallium (TMGa), trimethylaluminium (TMAl), tetrae-
thylsilane (TESi), bis (ethylcyclopentadienyl) magnesium
(Cp2Mg), and ammonia (NH3) were used as a gas precursor
in the reactor. The bubbler temperatures for the TMGa,
TMAl, TESi, and Cp2Mg gas precursors were set to 4, 17,
10, and 40  C, respectively, under pressure of 760 Torr. The
TMAl flows were set to 20.0 sccm for the growth of all samples
except the MQWs, ud-AlGaN FB, and MQB-EBL crystal structure
of the samples. Following the high quality of 4 μm-thick AlN
template,[15,30] a 1.7 μm-thick Si-doped n-Al0.55Ga0.45N BL and
then relatively Ga-rich 200 nm-thick Si-doped n-Al0.47Ga0.53N
EIL were grown, using the growth condition of TMGa ¼
4.0 sccm (BL), 6.0 sccm (EIL), and TESi ¼ 0.1 sccm (for both
BL and EIL). The Si-concentration in the n-AlGaN BL and
n-AlGaN EIL layers, respectively, was kept at the same level
of
6  1018 cm3. Next, threefold MQWs structure with
2 nm-thick Al0.32Ga0.68N quantum-well (QW)/8 nm-thick
Al0.47Ga0.53N-quantum well barrier (QWB) was grown, using
the growth condition of TMGa ¼ 5.0 sccm (QWB) and 4.5 sccm
(QW), TMAl ¼ 8.0 sccm (QW) and 20.0 sccm (QWB). All the
QWBs of the MQWs in all samples (A–D) were lightly doped with
TESi ¼ 0.02 sccm. Next, 6 nm-thick (sample A), 8 nm-thick
(sample B), 10 nm-thick (sample C), and 4 nm-thick (sample D)
ud-Al0.55Ga0.45N FB were grown, using the growth condition
of TMGa ¼ 6.0 sccm and TMAl ¼ 28.0 sccm. Subsequently,
twofold (EBL-I amd EBL-II) thin p-Al0.55Ga0.45N blocking
(20-30nm)/p-Al0.16Ga0.80N Valley (12 nm) structures were grown
as a MQB-EBL between ud-AlGaN FB and p-AlGaN HIL, using
the growth condition of TMGa ¼ 3.4 sccm (blocking) and
6.0 sccm (valley), Cp2Mg ¼ 30.0 sccm (for both blocking and val-
ley), shown in Figure 1. Similarly, TMAl ¼ 28.0 sccm (blocking)
and 16.0 sccm (valley) were supplied for the growth of MQB-EBL.
Finally, a 250 nm-thick Mg-doped p-Al0.47Ga0.53N HIL including
p-AlGaN contact layer was grown, using the growth condition of
TMGa ¼ 5.4 sccm (for both p-AlGaN HIL and p-AlGaN contact
layer). Cp2Mg ¼ 70.0 sccm for p-AlGaN HIL and Cp2Mg ¼
80.0 sccm for p-AlGaN contact layer were supplied. The
Mg-concentration in the p-AlGaN HIL was kept around
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6  1019 cm3. Figure 1 shows the schematic diagram of the

grown Lat-UVB LED samples (A, B, C, and D), which is not
up to the scale, but only for the eye guidance.
The crystallinity of n-AlGaN EIL layer underneath the MQWs
of one typical sample B was investigated by X-ray rocking curves
(XRCs), using Malvern Panalytical Japan, and the same Si-doped
n-AlGaN EIL layer was used in all samples A, C, and D. The inte-
grated PL, spectra of samples A, B, C, and D, respectively, were
measured using a 20 mW Ar-SHG (244 nm) laser as an excitation
source both at room temperature (RT) as well as at low tempera-
ture (LT). Depth profiles of Mg-atoms in the Mg-doped AlGaN
regions of UVB LED (sample A) were characterized by secondary
ion mass spectroscopy (SIMS) using PHI ADEPT 1010 with pri-
mary ion species: Csþ and primary acceleration voltage: 2.0 kV.
Recently, highly reflective p-electrode (87%), which consists of

1 nm-thick Ni film followed by 200 nm-thick Al film, was
deposited on the over layer of p-AlGaN contact layer instead
of conventional Ni/Au p-electrode, as shown in the inset of
Figure 1a. In-dot metal deposition on the n-AlGaN EIL was used
for the fabrication of n-electrodes on all samples A, B, C, and D of
Lat-UVB LEDs for quick check, as shown in the schematic view
of Figure 1a. The reported output power values in this work were
corresponding to the total radiant flux from the LEDs, and it was
measured on bare-wafer conditions using a Si-photodetector,
which was located just behind the test samples. This was cali-
brated to measure the luminous flux for accurate values of light
output power measurement.[32,33] The performances (I-Ls and
I-EQEs) of all Lat-UVB LED devices were evaluated at RT under
continuous-wave (cw)-operation using p-type electrodes with
chip size area of 0.35  0.35 mm2on bare-wafer level condition.
Figure 2. XRCs of the n-AlGaN EIL underneath the MQWs, with the
FWHM values along (0002) plane, and the (10–12) plane of sample B
(the same n-AlGaN EIL layer was used in all samples A, B, C, and D).
3. Results and Discussion
3.1. Crystallinity and PL Characterization LEDs (sample A, B, C and D) were observed both at RT
(300 K) and at LT (77 K), with band-emission wavelength of
The crystalline quality of AlN template layer was investigated and 290–300 nm, as shown in Figure 3a–d. Furthermore, a clear
confirmed using XRD and high-resolution of transmission elec- shoulder peak around 270 nm, respectively, was observed in
tron microscope (HR-TEM),[7,13,34] where the full width at half all samples A, B, C, and D, respectively, both at LT as well
maximum (FWHM) values of the XRCs along (0002) and as at RT, which were originated from the n-Al0.47 Ga0.53N
(10–12) planes, respectively, are 200 and 350 arcsec (total-TDDs EIL, shown in Figure 3a–d. In addition, some other interesting

5  108 cm2). High crystalline quality of n-AlGaN EIL under- results were observed when comparing the main PL emission
neath the MQWs and suitable design of ud-AlGaN FB along with peaks of these four samples A, B, C, and D at LT, where the
highly transparent p-AlGaN HIL are believed to be critical for real- emission from MQWs possessed an apparently smaller
izing high-efficiency Lat-UVB LED devices. A similar, 200 nm- FWHM value <12 nm (narrow-band, NB), shown in
thick n-AlGaN EIL was designed and fabricated on the over layer Figure 3a–d. The FWHM of the PL spectra at LT for samples
of 1.7 μm-thick n-AlGaN BL for all samples A, B, C, and D, where A, B, C, and D, respectively, was estimated to be 6, 11, 9,
the FWHM of XRCs along (0002) and (10–12) planes, respectively, and 11 nm. Furthermore, the NB-EL emission from AlGaN-
was reduced to
311 and
442 arcsec, shown in Figure 2a,b. The based UVB MQWs is strongly dependent on the NB-PL spectral
edge-, screw-, and mixed-type TDDs respectively of the same emission, with slight shift in the emission peak, as shown in
n-AlGaN EIL structure underneath the MQWs were previously Figure 3a–d and Figure 4a. The lowest FWHM value of 6 nm
confirmed to be 4.5  108, 5.5  107, and 4.7  107cm2 (total- in sample A can be associated to two possible reasons to explain
TDDs
5.5  108 cm2) as determined from a cross-sectional about band narrowing for expected medical applications. The
transmission electron microscope (TEM) image.[30] first reason could possibly be due to the reduction of quan-
Based on the relatively good crystalline quality of n-AlGaN EIL tum-confined Stark effect (QCSE) in the structure with opti-
underneath the MQWs,[30] four new samples A, B, C, and D were mized QWB (8–10 nm) and QW (1–2 nm) in the MQWs,[31]
prepared with different TFB. Therefore, the influence of TFB on and the second reason could possibly be due to the reduction
the relative PL spectral emission from MQWs of samples A, B, C, of TDDs in n-AlGaN EIL (total-TDDs
5.5  108 cm2) under-
and D was investigated. PL spectral emissions from Lat-UVB neath the MQWs.[7,8,30,31,35] The need of NB UVB emission is

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(a) (b)
Time: 0.1sec Time: 0.1sec sample B
Slit: 0.1mm sample A Slit: 0.1mm
3 Ar-SHG(244nm) Ar-SHG(244nm)
P=20mW P=20mW
TFB ~ 6nm, PLRT/PLLT= 53%
TFB ~ 8nm, PLRT/PLLT= 48%
77K 2
77 K

PL (RT)/PL (LT)
PL (RT)/ PL (LT)

300K
1
1 300K

0 0
270 280 290 300 310 320 270 280 290 300 310 320
Wavelength [nm] Wavelength [nm]
(c) (d)
Time: 0.1sec sample C Time: 0.1sec sample D
Slit: 0.1mm Slit: 0.1mm
Ar-SHG(244nm) Ar-SHG(244nm)
1.5 P=20mW 1.5 P=20mW

TFB ~10nm, PLRT/PLLT= 40% TFB ~ 4nm, PLRT/PLLT=31%

PL (RT)/ PL( LT)

77K
PL (RT)/ PL (LT)

77K
1 1

0.5 0.5
300K
300K

0 0
270 280 290 300 310 320 260 280 300 320
Wavelength [nm] Wavelength [nm]

Figure 3. Integrated PL spectra of a) sample A, b) sample B, c) sample C, and d) sample D, measured using a 20 mW Ar-SHG (244 nm) laser as an
excitation source both at RT (300 K) and at LT (77 K).

critical and the NB-UVB light sources release a smaller range of
UV light with FWHM of 4 nm. NB-310 nm UVB phototherapy
can be used to cure cancer and skin diseases while minimizing
the adverse side effects to the neighboring non-affected
tissues.[8,36,37]
The PLRT/PLLT ratio of the AlGaN-based MQWs of samples A,
B, C, and D was evaluated, respectively, as 53%, 48%, 40%, and
31% as a function of TFB, under the same measurement condi-
tion as shown in Figure 3a–d. The PL spectral peak position of
AlGaN/AlGaN MQWs at RT in sample A is expected to be
slightly suffered by red-shift relative to that of LT due to the tem-
perature-induced band-gap shrinkage, shown in Figure 3a.
However, significant blue-shifts were also observed in the PL
spectral emission from samples B and D, whereas the PL
emission peak from sample C remains stationary. Previously,
the grown n-type Al0.47Ga0.53N EIL was in a relaxed state (with
a relaxation ratio of 30%) with respect to the fully relaxed AlN
substrate, and such highly strained (70%) n-AlGaN EIL might
cause the piezoelectric (PZ) polarization effect in the MQWs
of the UVB LEDs.[30,31] Because the EQE was limited up to
4.4% with maximum light outpower of 12 mW at 293 nm emis-
sion and high IQE around 47% measured by temperature depen-
dent and power density dependent PL measurement.[29,30] The
relative PLRT/PLLT ratio of sample A (this work) was estimated
to be 53%, indicating that the 295 nm-MQWs structure with rel-
atively thin TFB
6 nm can effectively enhance the emission effi-
ciency from the MQWs, which is speculated to be due to the hole
tunneling enhancement from p-AlGaN HIL side including

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(a) (b)
sample C 50 sample C
sample D sample D
(290-300nm)-Band sample A sample A
sample B 40 sample B

EL Intensity [a. u]
FB (approx: 6 nm)

Current [mA]
FB (approx: 8 nm)
30
FB (approx: 4 nm)
I-V Characteristics
FB (approx: 10 nm)
20
AlGaN-based UVB LEDs on AlN
template/sapphire substrate 10
measured at pulsed (RT)

0
300 350 400 450 500 0 10 20 30 40 50 60 70
Wavelength [nm] Voltage [V]
(c) (d)
6
Output power [mW]

20 2 sample A (approx: 6 nm)

sample A (power) 0.35×0.35 mm
12 15 under 82 mA
sample B (approx: 8 nm)
Output power [mW]

5
10
5 4 sample C (approx: 10 nm)

EQE [%]
8 0
0 20 40 60 80 3 sample D (approx: 4 nm)
Current [mA]
EQE measured under CW operation at RT
2 sample A, B, C and D
4

Power measured under 52 mA 1

at RT sample A, B, C and D
0 0
0 10 20 30 40 50 10 20 30 40 50
Current [mA] Current [mA]

Figure 4. a) Dependence of EL spectral emission intensity on the thickness (TFB) of ud-AlGaN FB in Lat-UVB LEDs of samples A, B, C, and D measured
under DC drive operation at RT. Device performances of 295–300 nm-UVB LEDs (samples A, B, C, and D): b) I–V characteristics (the QCSE effect has
been illustrated in the inset); c) current versus output power (I–L); d) current versus EQEs (I–EQE) characteristics, just on bare-wafer level conditions
under cw-operation at RT.

MQB-EBL toward the MQWs as well as due to the band align- 100
ment at the interface of ud-AlGaN FB and MQB-EBL structure, sample A
when compared with our previous studies[30,31], as shown in
Relative transmittance [%]

80
Figure 1b,c.

60
3.2. Optical and Electrical Properties (Performances Evaluation)
of Lat-UVB LED Devices UVB Range
40
Mg-doped p-Al0.55Ga0.45N contact layer of UVB LEDs (previous
work),[30,31] where highly relative transmittance ≥90% in the
20
UV-emission band of 293–340 nm, was successfully achieved.
Similarly, the Mg-doped p-Al0.47Ga0.53N contact layer including
p-Al0.47Ga0.53N HIL of the Lat-UVB LED (sample A; this work), 0
where highly relative transmittance ≥90% for UVB range, was 220 240 260 280 300 320 340 360 380 400
also confirmed, shown in Figure 5, and the same p-AlGaN struc- Wavelength [nm]
ture was used in all samples A, B, C, and D. Such highly trans-
Figure 5. Relative transmittance through p-AlGaN-based UVB LED struc-
parent p-AlGaN layers are very essential for the enhancement of
ture (sample A).
light extraction efficiency (LEE) in the Lat-UVB LED devices of
samples A, B, C, and D to replace the p-GaN.
For the development of Lat-UVB LED (n-AlGaN EIL/AlGaN-
MQWs/ud-AlGaN FB/p-AlGaN MQB-EBL/p-AlGaN HIL) struc- and uncontrolled diffusion of Mg-atoms into MQWs may decrease
tures, we require optimization of the ud-AlGaN FB and p-type the performance of UVB LED devices. Figure 6a presents the
AlGaN material growth process in a way to avoid Mg-diffusion SIMS depth profiles of Mg-atoms (NMg) in a newly designed
into MQWs. Especially, the non-uniform distribution of Mg- Lat-UVB LED epitaxial heterostructure (sample A). The Mg-depth
dopants (NMg) in the p-AlGaN HIL as well as in the MQB-EBL profile is found to be uniform in the p-AlGaN HIL, but relatively

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(a) MQB-EBL Figure 1c. Al-composition of
55% in the ud-AlGaN FB of

FB
MQWs

MQWs was chosen for the dual purposes of Mg-blocking from

ud-AlGaN
EBL-II

EBL-I
the MQWs as well as for the blocking of low-energy electron from

Valley
22
10 p-AlGaN-HIL n-AlGaN EIL
overshooting toward the p-AlGaN HIL, as shown in Figure 1c. It is
21
10 clearly visible that the Al-compositions of 55% in the ud-
sample A Mg
Mg [atoms-cm-3]

Al0.55Ga0.45N FB and TBF
6 nm can effectively block the Mg-

20
10 diffusion into the MQWs, as shown in Figure 6a.
19 To confirm the single peak EL spectral emission from the LED
10 devices, a typical sample A was chosen for log scale data evalua-
18 tion, as shown in Figure 6b, and the same results were also con-
10
firmed in the other samples B, C, and D. The EL spectral
10
17 emissions under the variation of dc drive (1–8 mA) show that
all other emissions (including the deep-level emissions, with
16
10 wavelengths emission between 350 and 550 nm) were found
0 50 100 150 200 250 300 to be smaller than the main emissions peaks around 300 nm
Depth [nm] from MQWs, shown in Figure 6b.
(b) Finally, the performances of Lat-UVB LED devices based on
sample A
sample A, B, C, and D were evaluated, at RT under cw-operation,
4 I = 1 mA as shown in Figure 4a,b. Figure 4a shows the EL spectral emis-
10 I = 3 mA
I = 8 mA sions from samples A, B, C, and D at injection currents of 5 mA
under the pulsed operation at RT, where single peak emissions
3
EL Intensity [a. u]

10 were confirmed in the emission band of 290–300 nm. A marked

2 is attributed to the efficient hole injection (tunneling) into the
10
1 of Figure 1b,c and also confirmed by the enhancement of PL
10
0
10
300 350 400
Wavelength[nm]
Figure 6. a) The SIMS depth profiles of Mg-atoms in the newly designed
AlGaN-based UVB LED structure (sample A), where five distinct regions
can be identified as: i) p-AlGaN HIL, ii) MQB-EBL, iii) ud-AlGaN FB,
iv) MQWs, and v) n- AlGaN EIL, respectively (as marked on top).
b) EL spectra of UVB LED (sample A) with peak emission wavelength
at 300 nm on a log scale under DC drive operation at RT.
high peak of Mg-atoms was observed in EBL-II of MQB-EBL,
shown in Figure 6a. It was also confirmed that the implemented
ud-AlGaN FB between MQWs and p-AlGaN MQB-EBL success-
fully separated them, enough to prevent the acceptor dopant,
NMg from diffusing into the MQWs, as shown in Figure 6a.
From the macroscopic viewpoint, the NMg was uniformly distrib-
uted within the p-AlGaN HIL layer. The average NMg of p-AlGaN
HIL remained constant around 6  1019 cm3 but then slightly
increased up to 1  1020 in the EBL-II of MQB-EBL, as shown
in Figure 6a. The Mg-depth profile shows that no segregation
and diffusion phenomena were observed from MQB-EBL toward
the MQWs via newly optimized ud-AlGaN FB (sample A), as
shown in Figure 6a. It is important to mention here that previously
in our old UVB LED, Al-composition of
47% in the ud-AlGaN
FB and Al-composition of
47% in the normal QWBs were used,
as shown in the schematic view of Figure 1b. However, in the
newly designed UVB LED, Al-composition of
47% (20.0 sccm)
in the normal QWBs and Al-composition of
55% (28.0 sccm)
in the ud-AlGaN FB of MQWs were chosen, as shown in
increase in the EL intensity was observed with TBF
6 nm, which
MQWs as well as due to the band alignment between ud-
AlGaN FB and MQB-EBL, as illustrated in the schematic view
emission intensity both at RT as well as LT, shown in
Figure 3a–d. However, the polarization field within the ud-
AlGaN FB can prevent the holes from moving into the MQW.
450 500
The polarization in the III-Ns materials system consists of both
spontaneous (SP) and PZ components. When looking along the
c-direction of AlGaN crystal growth, pure Ga and pure N sub-
layers can be identified in the UVB LED crystal structure, as
shown in Figure 1b,c. Wurtzite III-Ns materials exhibit sponta-
neous polarization because of the highly ionic bond result from
the large difference in electronegativity between Ga, Al, and N,
and therefore, the wurtzite structure is lacking inversion symme-
try, i.e., same atoms on the same plane of crystal. The polarity of
the AlGaN crystal decides the direction of SP polarization in the
devices. In addition, the III-Ns materials exhibit piezoelectricity
too, i.e., the characteristic of generating internal electric field due
to the existence of mechanical stress, in the grown layer of
n-AlGaN EIL underneath the MQWs on AlN template. The lattice
mismatch between AlN and n-AlGaN EIL underneath the MQWs
gives rise to compressive strain in the MQWs, which might fur-
ther induce an internal PZ field. The polarity of the crystal and
the type of elastic strain, i.e., compressive or tensile strain, may
decide the direction of SP and PZ polarization all together in the
UVB LED devices. Therefore, the orientation of the SP and PZ
polarization is parallel in the case of tensile strain and antiparallel
in the case of compressive strain. In the present work, n-AlGaN
EIL is 30% relaxed layers (70% strained) underneath the MQWs
with respect to the fully relaxed AlN template, measured by the
XRD measurement of reciprocal space mapping (RSM).[30,31]
Therefore, the total internal field in the AlGaN/AlGaN MQWs
might be existed, which comprised of both SP and PZ polariza-
tion in UVB LED devices. In this work, we did not measure the
internal field due the polarization effects in the AlGaN MQWs,

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www.advancedsciencenews.com
but the PL emission from samples A, B, C, and D and highly
strained (70%) n-AlGaN EIL underneath the MQWs gives
extensive clues of the existence of polarization field in the
MQWs, as shown in Figure 3a–d.
The current versus voltage (I–V) characteristic of the devices
was also measured, where driving voltages in the range of
22–30 V at 5 mA, respectively, were identified using Ni
(1 nm)/Al (200 nm) p-electrodes for samples A, B, C, and D,
respectively, shown in Figure 4b. However, the turn on voltages
in the LEDs (sample B and C) were found to be higher than the
LED (sample A and D), as shown in Figure 4b. These relatively
low voltages as depicted in I–V curve for samples A and B as
compared with the samples C and D at low current of 10 mA
are attributed to the hole tunneling enhancements as a function
of TFB. However, the decrease in ud-AlGaN FB thickness, TFB
would also cause a reduction in the series resistance and hence
a drop in voltage, as shown in Figure 4b. In the case of AlGaN-
based MQWs structure, a spatial separation of the electron and
hole wave-functions can be induced by the large electric field in
the QW due to the polarization effect along the c-axis of the AlN
crystal,[7,8,35,38] as shown in the inset of Figure 4b. However, elec-
tron–hole (e–h) separation is suppressed as the QW thickness
decreases, which is the collective suppression of PZ polarization
electric fields in the QW of MQWs (QCSE), as shown in the inset
of Figure 4b. Therefore, the use of a very thin QW and suitable
thickness of ud-AlGaN FB are expected to enhance the radiative
recombination in the MQWs.[30,31,35,38] Generally, the uniform
distribution of e-h pairs across the whole region of MQWs is also
desired for higher radiative recombination, which is possible due
to the collective contribution of each QW and QWBs of active
region (MQWs). Liu et al. investigated the influence of QWB
on the hole transport and carrier distribution in InGaN/GaN
MQWs of visible LEDs and found that the thicker QWB and
QW layers were causing problem to the uniform distribution
of e-h pairs in the active region for efficient radiative recombina-
tion.[39] We also found the same issue in AlGaN-based UVB LED
at 310 nm emission, and such issue was resolved later after the
reduction of QWB thickness from 20 to 8 nm.[31,40]
During the performances evaluation of the newly fabricated
UVB LED devices, light output powers were varied linearly from
7.5 to 17 mW with varying TFB at the maximum current range of
52–85 mA at RT, under cw-operation, as shown in Figure 4c.
Also, the output power in all Lat-UVB LED devices (sample A,
B, C and D) shows a reasonably linear increase with increasing
the drive current, as shown in Figure 4c. When, TFB was reduced
from
10 nm (sample C) to
6 nm (sample A) respectively, the
maximum light output power was enhanced from 7 to 17 mW on
bare-wafer level measurement under cw-operation at RT, as
shown in the inset of Figure 4c. Similarly, the maximum EQE
was also improved from 3.7% to 5.6%, with relatively thin TFB

6 nm under cw-operation at RT, using Ni (1 nm)/Al
(200 nm) p-electrode, shown in Figure 4d. Furthermore, some
interesting phenomenon was observed, when TFB was either
increased up to
10 nm (sample C) or decreased up to

4 nm (sample D), the maximum output power and EQE,
respectively, remained the same as 7.5 mW and 3.7% with emis-
sion band of 295–300 nm at 30 mA, shown in Figure 4c,d. These
results also confirm that the thicker TFB is not useful for hole
tunneling because the effective mass of hole is larger than the
Phys. Status Solidi A 2019, 216, 1900185 1900185 (7 of 9)
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effective mass of electron and therefore low probability of hole
tunneling toward MQWs is speculated. Similarly, too much
thinner TFB
4 nm is also not useful because of the possibility
of Mg-atoms diffusion into the MQWs might be higher and there-
fore TFB
6 nm thickness is speculated to be thinner enough to
allow the hole injection into the MQWs (sample A) and at the
same time to suppress the Mg-diffusion from the MQWs, as
shown in the SIMS profile of Figure 6a. However, the whole
scenario can be explained more easily, by considering the quan-
tum mechanical phenomena at the interface of p-AlGaN-based
MQB-EBL and ud-AlGaN FB, as depicted schematically in the
energy band diagram of Figure 1b,c. When compared with the
p-AlGaN MQB-EBL, such energy band bending in the thin
ud-AlGaN FB layer is decided by the polarization-induced electric
field. Especially, the surface depletion region width is precisely
determined by the ud-AlGaN FB layer thickness. Figure 4a–d
also illustrates that if the TFB is further thickened, the surface
depletion region width will be larger and the intra-band tunn-
eling efficiency for the hole carriers becomes low, and such
hypothesis is supported by the results of EL spectral intensities
(Figure 4a), shows an even more degraded emission efficiency
in the Lat-UVB LED with the TFB
10 nm at 20 mA (sample C),
when compared with TFB
6 nm (sample A) under the DC
drive mode.
One potential reason of the improvement in the device
performance was achieved by shifting from conventional
design[30,31] of ud-AlGaN FB (Al-contents
47%) to the new
design of ud-AlGaN FB (Al-contents
55%). Conventionally,
the conduction band offset at ud-AlGaN FB/MQB-EBL interface
was utilized for the suppression of electron-leakage; however,
for III-Ns, the polarization field-induced band tilt has an impor-
tant impact on the effective potential barrier heights.[7,8,13]
Previously, the polarization effects in the MQWs region were
reasonably reduced, by keeping the QWB thickness around
8–10 nm and QW thickness around 1.5–2 nm.[30,31] However,
the EQE and light output power, respectively, from Lat-UVB
LEDs were limited up to 4.4% and 12 mW at 293 nm emission
by using the same Al-composition of 47% for both in the final
barrier (FB) of MQWs (ud-Al0.48Ga0.52N FB) as well as in all
other QWBs of the reference sample.[30,31] One major issue
of electron-leakage current was realized (nonlinear behavior
of I–L curve), which might be caused by intrinsically low hole
concentration in Mg-doped p-type AlGaN due to high acceptor
activation energy as well as due to the injection mismatch
between electrons (n-AlGaN EIL) and holes (p-AlGaN HIL)
of Lat-UVB LED devices.[31,40] In our previous work, both the
conduction and valance band nearby ud-AlGaN FB/MQB-EBL
interface were drastically dropped, due to the positive polariza-
tion charges, resulting in a band dip, which is caused by the
design of high Al-composition (55%) in the MQB-EBL as well
as low Al-composition (47%) in the ud-AlGaN FB (conduction
and valance band offset). In this scenario, plenty of electrons
might be gathered, and these parasitic electrons may not con-
tribute to the desired light-emission (non-radiative recombina-
tion) from the MQWs of UVB LEDs, as shown in Figure 1b.
Furthermore, the effective potential barrier height (PFBh) for
the hole transport was found to be unsuitable in the previous
work, as shown in Figure 1b. In this work, we shifted to slightly
a new design of the ud-Al0.55Ga0.45 FB in the LED, which has
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
www.advancedsciencenews.com
relatively high Al-composition (55%), when compared with the
normal QWBs (n-Al0.47Ga0.53N) of the MQWs. By comparison,
the optimized ud-AlGaN FB structure (sample A: this work) is
much better and the band dip at ud-AlGaN FB/MQB-EBL inter-
face was minimized by keeping relatively high Al-composition
(
55%) in the ud-AlGaN FB, which is equivalent to the Al-
composition (
55%) in the MQB-EBL. The newly optimized
structure may avoid the ud-AlGaN FB/MQB-EBL interface polar-
ization charges and therefore remove the band dip and the
parasitic electrons at this interface, as shown in Figure 1b,c.
More simply, the conduction band offset at the interface of
ud-AlGaN FB/MQB-EBL was reduced to a smaller value, due
to the Al-composition enhancement from 47% to 55% in the
ud-AlGaN FB. Subsequently, the small dips may lie above the
electron quasi Fermi level for electron, and the downward bend-
ing at the interface of ud-AlGaN/ MQB-EBL (Figure 1c) is slightly
lower than the previous UVB LED,[30,31] and such arrangement
may lead to the improved hole injection probability from
p-AlGaN side toward the MQWs of UVB LEDs (this work), as
shown in Figure 1c. Finally, when the conventional MQWs struc-
ture was replaced with a new MQWs in the Lat-UVB LED, the
maximum light power was improved from 7.5 to 17 mW.
These results can further be improved, by promoting the Mg-
atomic activation in the p-AlGaN HIL and then enhancing to
the tunneling probability of hole from p-AlGaN HIL side includ-
ing p-AlGaN MQB-EBL toward the MQWs of Lat-UVB LED. The
hole concentration up to 2  1015 cm3 in the p-AlGaN HIL via
special approach of 3D-hole generation, using polarization dop-
ing,[41] is desired. The measurement and detailed investigation of
the internal field due to both the SP and PZ polarization in the
AlGaN-based UVB LED devices grown on c-plan of AlN are also
inevitable in the future.[8,35]
The improved EQE of 5.6% at 20 mA and maximum light
output power of 17 mW at 82 mA dc drive measured on bare-
wafer level conditions in Lat-UVB LED are relatively small,
when compared with those obtained from flip-chip-based deep
ultraviolet light-emitting diodes (DUV LEDs), using photonic
crystal (PhC) in p-AlGaN (p-GaN) as well as using lens-like pack-
aging.[7,8,42] Therefore, further improvement in the Lat-UVB
LEDs is expected, by using flip-chip technology, PhC in
p-AlGaN (p-GaN), polarization doping, and lens-like packag-
ing.[32,33,41–43]
Last but not the least, the ultimate goal is to develop NB-UVB
LED light sources, which are strongly needed for the specific real-
world applications, such as those in immunotherapy, for vulgaris
treatment, and plant lightning.[1–6,8] A small part of the NB-UVB
spectrum can be used to treat skin conditions such as psoriasis
and eczema.[8,36,37] NB-310 nm UVB phototherapy can be used to
cure cancer and skin diseases while minimizing the adverse side
effects to the neighboring nonaffected tissues.[8,36,37] Based on
the best clinical record, the UVB light sources with NB emission
were highly recommended for the treatment of psoriasis in the
national guidelines of the USA and in some other countries
too.[36,37] The FWHM of the PL spectra at LT for sample A
was estimated to be 6 nm, and FWHM of the EL spectra at
RT from the same sample was estimated to be 10 nm.
However, we need to control the NB-UVB emission peak with
FWHM about 4 nm in the future, to improve the quality of life
(QOL).
Phys. Status Solidi A 2019, 216, 1900185 1900185 (8 of 9)
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4. Conclusions
In summary, the influence of ud-AlGaN FB thickness (TFB) on
the performance of AlGaN-based UVB LEDs with peak emis-
sions band of 290–300 nm was investigated. A reasonable
improvement in the UVB LED output power of 17 mW at
82 mA was successfully achieved by using a thin ud-AlGaN
FB (Al:55%) of
6 nm, along with highly transparent p-AlGaN
layers as well as highly reflective Ni/Al p-electrode. When the
thickness of ud-AlGaN FB (TFB) was set to
6 nm and also
the band dip at ud-AlGaN FB/MQB-EBL interface was mini-
mized in the UVB LED, a value of improvement in EQE of
5.6% under 30 mA, at 300 nm emission was successfully demon-
strated on bare-wafer condition, under the cw-operation at RT.
This improvement in the device performance is attributed to
the optimally thinner TFB as well as having suitable potential bar-
rier height of ud-AlGaN FB, which is not only promoting the hole
tunneling toward the MQWs but at the same time also suppress-
ing the Mg-diffusion from MQB-EBL side toward the MQWs of
Lat-UVB LED.
Acknowledgements
The authors would like to acknowledge the support by Special Postdoctoral
Researcher (SPDR) Program office of Riken to make this research work
possible. This work was partially supported in part by the New Energy
and Industrial Technology Development Organization (NEDO), Japan.
Conflict of Interest
The authors declare no conflict of interest.
Keywords
external quantum efficiency, hole tunneling, light output power, narrow-band
UVB, polarization effect, ultraviolet-B light-emitting diodes, undoped-AlGaN
final barrier
Received: March 12, 2019
Revised: June 29, 2019
Published online: August 5, 2019
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