Numerical 2

• For the ring oscillator , use switch RC model

and the following parameters for the
equivalent inverters which model the NOR
gates: Rp =11 KΩ, Rn =10 KΩ and CL =99fF.
Compute the frequency at the output?
 Numerical 2
• For the ring oscillator , use switch RC model and the following parameters
for the equivalent inverters which model the NOR gates: Rp =11 KΩ, Rn =10
KΩ and CL =99fF. Compute the frequency at the output?
 Numerical 2
• For the ring oscillator , use switch RC model and the following parameters
for the equivalent inverters which model the NOR gates: Rp =11 KΩ, Rn =10
KΩ and CL =99fF. Compute the frequency at the output?
 Numerical 3
• Figure shows a inverter with reduced input
swing. Compute VoH and VoL
 Numerical 3
• Figure shows a inverter with reduced input
swing. Compute VoH and VoL
VoH= 5V
 Numerical 3
• Figure shows a inverter with reduced input
swing. Compute VoH and VoL
Vin= 3.5V

NMOS in Linear mode

PMOS in saturation mode

 Numerical 3
• Figure shows a inverter with reduced input
swing. Compute VoH and VoL
Vin= 3.5V
 Numerical 3
• Figure shows a inverter with reduced input
swing. Compute VoH and VoL, Vtn=|Vtp| =1,
2, 2
µnCox =500 µA/V µpCox =200 µA/V

Vin= 3.5V
 Numerical 3
• Figure shows a inverter with reduced input
swing. Compute VoH and VoL
 Numerical 3
• Assume that Vin can swing rail to rail (0 to 5V).
Find the dynamic power consumption at the
output given a switching frequency of 100
MHz and capacitance 1.2pF
 Numerical 4
Design a resistive-load inverter with R = 1 kiloohm, such that VOL = 0.6 V.
The enhancement-type nMOS driver transistor has the following parameters:
VDD = 5 .0 V
VT0 = 1.0 V
γ= 0.2 V1/2
λ=0
µnCox = 22.0 µA/V2

(a) Determine the required aspect ratio, W/L.

(b) Determine VIL and VIH.
(c) Determine noise margins NML and NMH.
Design a resistive-load inverter with R = 1 kiloohm, such that VOL = 0.6 V.
The enhancement-type nMOS driver transistor has the following parameters:
VDD = 5 .0 V
VT0 = 1.0 V
γ= 0.2 V1/2
λ=0
µnCox = 22.0 µA/V2

(a) Determine the required aspect ratio, W/L.

Design a resistive-load inverter with R = 1 kiloohm, such that VOL = 0.6 V.
The enhancement-type nMOS driver transistor has the following parameters:
VDD = 5 .0 V
VT0 = 1.0 V
γ= 0.2 V1/2
λ=0
µnCox = 22.0 µA/V2

(a) Determine the required aspect ratio, W/L.

Design a resistive-load inverter with R = 1 kiloohm, such that VOL = 0.6 V.
The enhancement-type nMOS driver transistor has the following parameters:
VDD = 5 .0 V
VT0 = 1.0 V
γ= 0.2 V1/2
λ=0
µnCox = 22.0 µA/V2

(a) Determine the required aspect ratio, W/L.

Design a resistive-load inverter with R = 1 kiloohm, such that VOL = 0.6 V.
The enhancement-type nMOS driver transistor has the following parameters:
VDD = 5 .0 V
VT0 = 1.0 V
γ= 0.2 V1/2
λ=0
µnCox = 22.0 µA/V2

(a) (b) Determine VIL and VIH.

Design a resistive-load inverter with R = 1 kiloohm, such that VOL = 0.6 V.
The enhancement-type nMOS driver transistor has the following parameters:
VDD = 5 .0 V
VT0 = 1.0 V
γ= 0.2 V1/2
λ=0
µnCox = 22.0 µA/V2

(a) (b) Determine VIL and VIH.

Design a resistive-load inverter with R = 1 kiloohm, such that VOL = 0.6 V.
The enhancement-type nMOS driver transistor has the following parameters:
VDD = 5 .0 V
VT0 = 1.0 V
γ= 0.2 V1/2
λ=0
µnCox = 22.0 µA/V2

(a) (b) Determine VIL and VIH.

Design a resistive-load inverter with R = 1 kiloohm, such that VOL = 0.6 V.
The enhancement-type nMOS driver transistor has the following parameters:
VDD = 5 .0 V
VT0 = 1.0 V
γ= 0.2 V1/2
λ=0
µnCox = 22.0 µA/V2

(a) (b) Determine VIL and VIH.

Design a resistive-load inverter with R = 1 kiloohm, such that VOL = 0.6 V.
The enhancement-type nMOS driver transistor has the following parameters:
VDD = 5 .0 V
VT0 = 1.0 V
γ= 0.2 V1/2
λ=0
µnCox = 22.0 µA/V2

(a) (b) Determine VIL and VIH.

Design a resistive-load inverter with R = 1 kiloohm, such that VOL = 0.6 V.
The enhancement-type nMOS driver transistor has the following parameters:
VDD = 5 .0 V
VT0 = 1.0 V
γ= 0.2 V1/2
λ=0
µnCox = 22.0 µA/V2

(a) (b) Determine VIH.

Design a resistive-load inverter with R = 1 kiloohm, such that VOL = 0.6 V.
The enhancement-type nMOS driver transistor has the following parameters:
VDD = 5 .0 V
VT0 = 1.0 V
γ= 0.2 V1/2
λ=0
µnCox = 22.0 µA/V2

(a) (b) Determine VIH.

Design a resistive-load inverter with R = 1 kiloohm, such that VOL = 0.6 V.
The enhancement-type nMOS driver transistor has the following parameters:
VDD = 5 .0 V
VT0 = 1.0 V
γ= 0.2 V1/2
λ=0
µnCox = 22.0 µA/V2

(a) (b) Determine VIH.

Design a resistive-load inverter with R = 1 kiloohm, such that VOL = 0.6 V.
The enhancement-type nMOS driver transistor has the following parameters:
VDD = 5 .0 V
VT0 = 1.0 V
γ= 0.2 V1/2
λ=0
µnCox = 22.0 µA/V2

(a) (b) Determine VIH.

Design a resistive-load inverter with R = 1 kiloohm, such that VOL = 0.6 V.
The enhancement-type nMOS driver transistor has the following parameters:
VDD = 5 .0 V
VT0 = 1.0 V
γ= 0.2 V1/2
λ=0
µnCox = 22.0 µA/V2

(a) (b) Determine VIH.

Tutorial 6
 Numerical 1
• Logic function of the circuit given below?
 Numerical 1
• Logic function of the circuit given below?
Numerical 1
Numerical 1