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A Continuous, Analytic Drain-Current Model For DG Mosfets
A Continuous, Analytic Drain-Current Model For DG Mosfets
(a)
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108 IEEE ELECTRON DEVICE LETTERS, VOL. 25, NO. 2, FEBRUARY 2004
(2)
where is a constant (of ) to be determined from the boundary Fig. 2. Plot of g versus f with as a hidden parameter. The same curve is
condition plotted on both logarithmic (left) and linear (right) scales. f spans the entire
(01 1 , ) range as varies from 0 to =2. The algorithm of calculating the
drain current for given V , V is illustrated graphically using the linear curve.
(3)
(7)
(4)
(8)
For a given , can be solved from (4) as a function of . where is a structural parameter. The range
Along the channel direction , varies from the source to the
of is . For given and , and are
drain. So does . The functional dependence of and
found from the conditions and
is determined by the current continuity condition which requires
, where
the current , independent of
or . Here is the effective mobility, is the device width,
and is the total mobile charge per unit gate area. Integrating (9)
from the source to the drain and expressing as
, Pao–Sah’s integral [1] can be written as
Then can be easily computed. Graph-
ically, one can plot versus with as an intermediary pa-
(5) rameter and proceed as shown in Fig. 2.
MOSFET characteristics for all regions: linear, saturation,
and subthreshold, can be generated from this continuous, ana-
where , are solutions to (4) corresponding to lytic solution. For example, in the linear region above threshold,
and respectively. From Gauss’s both , , so , . and are dom-
law, [5], which equals inated by the last terms of (7) and (8), therefore
using (2). can also be
expressed as a function of by differentiating (4). Substitute
these factors in (5) and carry out the integration analytically
(10)
Here where is
a second-order effect ( 0.05 V) [4] coming from the
term in (7). Note that the factor of in cancels the factor in
so that is independent of .
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TAUR et al.: CONTINUOUS, ANALYTIC DRAIN-CURRENT MODEL FOR DOUBLE-GATE MOSFETs 109
Fig. 3. I –V curves calculated from the analytic model (solid curves), Fig. 4. I –V characteristics obtained from the analytic model for two
compared with the 2-D numerical simulation results (open circles). A constant different values of t (solid and dashed curves), compared with the 2-D
mobility of 300 cm =V-s is used in both calculations. numerical simulation results (symbols). The same currents are plotted on both
logarithmic (left) and linear (right) scales.
In the saturation region, where , but the analytic model for asymmetric DG MOSFETs are also in
so , one obtains complete agreement with 2-D numerical simulations.
In conclusion, a continuous I–V model is derived from ana-
(11) lytic solutions of Poisson’s and current continuity eqs. for long-
channel DG MOSFETs. No charge sheet approximation is in-
voked—a key to the proper depiction of “volume inversion” in
Note that in this continuous model, the current approaches the subthreshold. It is shown that the I–V curves constructed by the
saturation value with a difference term exponentially decreasing analytic model are in complete agreement with 2-D numerical
with , in contrast to common piecewise models in which the simulation results without fitting terms or parameters. All re-
current is made to be constant in saturation. gions of MOSFET operation, including the linear, saturation,
In the subthreshold region, both , , so , and subthreshold regions, are covered by a pair of continuous
, and functions that can be easily calculated. This avoids the pitfalls
of the piecewise models, thus making this model ideally suited
(12) for compact model applications.1
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