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A Closed-Form Charge-Based Expression For Drain Current in Symmetric and Asymmetric Double Gate MOSFET
A Closed-Form Charge-Based Expression For Drain Current in Symmetric and Asymmetric Double Gate MOSFET
where Ψ is the band bending, ni is the carrier concentra- where Ψp is the pinch-off value of the surface potential.
tion and q is the electron charge. Using E = − dV To obtain the value of VG at this point, we notice that at
dx and
assuming the field is constant along the silicon thickness the back surface (which is now at the edge of inversion)
(because there is vanishingly small charge stored in the continuity of displacement vector is still applicable and
silicon film) we obtain by the definition of inversion Ψb = Ψp . This implies
can be neglected). Approximation (i) allow us to write In our implementation we have chosen n = 4 and λ = 21 .
dψ This choice provides a reasonably simple expression of the
ψb − ψf . (9) current and a good accuracy. The expression of the current
dξ
becomes ID = Ispec (i0 (qs ) − i0 (qd )), where
Using approximation (ii) we can write
√ 2
∗
Cox (vgb − ψb ) Csi (ψb − ψf ). qi2 1 1 1 −1 2q
(10) i0 (qi ) = − √ · − · qtran · tan ( 2 i )
2
4 2 2 2 1+F qtran
Using the above two equations we can eliminate ψb , and
Csi
∗
from the definitions of qf (b) = vgf (b) − ψf (b) and the fact
+ ln qi2 + 2 (qtran + 2)qi .
Cox
that qi = qf + qb , we express both qf and C in terms of qi
(19)
and substitute them back in (1). We can now differentiate
the expression to obtain This analysis provides the current if the charges at the
source and drain are known. These charges can be found
dvg 1 2qi + 2 CCox
si
·δ by solving a coupled non-linear equations at both ends [3].
= + 2 , (11)
dqi 1+F C
qi + 2 Cox
si
· δ · qi But the equations can be decoupled if one integrates the
dv
expression of dqgi . This requires the evaluation of charge
where F = CsiC+Csi
ox
and δ = δb − δf , δf (b) being the qi at vg = 0 ( the integration constant) in terms of techno-
normalized value of ∆f (b) . To find out the total inver- logical parameters, which can be easily done by using (7)
sion charge Qtran when the transition between only one and the value of E in WI.
150
Proceedings of ESSDERC, Grenoble, France, 2005
4
10 250 4000
This work
Numerical simulation This work
3500 Numerical simulation
2
10
200
Normalized current ( log scale)
Normalized current
150 2500
−2
10 2000
100 t =10,15,25,30 nm
si
−4
10 1500 tox=2 nm
t =20 nm Vg= 2 V
si
t =2 nm 1000
ox 50 Vs= 0 V
−6 V = 50 mV
10 d ∆ =−∆ =0.5 V
Vs=0 V b f
∆b=−∆f= 0.5, 0.25, 0 V 500
−8
10 0
0 0.5 1 1.5 2 0
Gate voltage ( V) 0 0.5 1 1.5 2
Drain Voltage (V)
1.4
4000
This work This work
Numerical simulation Numerical simulation
3500 1.2
3000 1
Normalized current
2500
0.8
gm/ID
2000
0.6
tsi=20 nm t =20 nm
1500 si
tox=2 nm
tox=2 nm
0.4 ∆b=−∆f= 0.5, 0.25, 0 V
1000 Vgs= 2 V
∆b=∆f= 0.5, 0.25, 0 V
0.2
500
0 0 −5 0 5
0 0.5 1 1.5 2 10 10 10
Drain Voltage (V) Normalized current
Figure 3: Plot of ID vs VD for VG = 2 V and ∆b = Figure 5: Plot of gm UT /ID vs ID /Ispec in saturation for
−∆f = 0.5, 0.25 and 0 V . As in Fig. 2, the current is ∆b = −∆f = 0.5, 0.25 and 0 V . The ratio is higher for
higher for higher asymmetry (∆b − ∆f ). lower asymmetry (∆b − ∆f ).
εox ∗
v − ψf (b) =
si . (23)
0
10 80 tox gf (b) tsi dξ f (b)
∗
−2
10 60
We now define a dimensionless quantity qf (b) = vgf (b) −
ψf (b) . From (23) we have
−4
2 2 2
dψ
10 40
2 εsi tox
qf (b) = . (24)
dξ f (b)
tsi=20 nm
−6
10 t =2 nm
ox 20
εox tsi
∆b=−∆f= 0.5, 0.25, 0 V
end. Fig. 6 shows the plots for normalized inversion obtain (1) from (25).
charge versus VG for both coupled (exact) [5] and de-
coupled (approximate, discussed at the end of previous 6. Acknowledgments
section) solutions.
The work presented in this paper was supported by the
Swiss National Science Foundation under grant number
4. Conclusion 200021-107971/1.
In this work we have presented, for the first time, an ana-
lytical closed form charge-based expression for the drain References:
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= eψ . (20) [4] M. Sylveira, D. Flandre, and P.G. A. Gespers. A
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L2
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si
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=2 · eψ − C . (22)
dξ LD
152