Electronic Circuits Chapter 5: Frequency Response: Dr. Dung Trinh

Dr.
Dung Trinh HCMUT / 2017
Electronic Circuits
Chapter 5: Frequency Response
Dr. Dung Trinh
1
Dr. Dung Trinh HCMUT / 2017
Outline
Introduction
Low frequency and high frequency models
Low frequency response of CS and CE Amplifier
High frequency model of MOSFET and BJT
Miller’s Theorem and Exact Analysis
HF Response of CG, Source and Emitter Followers
2
Introduction
At lower frequencies, the magnitude of the amplifier gain falls off. This occurs
because the coupling and bypass capacitors no longer have low impedances.
The gain of the amplifier falls off at the high-frequency end. This is due to
internal capacitive effects in the BJT and in the MOSFET.
3
Introduction: Low-pass Circuit
𝑉𝑖 1 𝑉𝑖
In frequency domain: 𝑉𝑜 = ∙ =
1 𝑗𝜔𝐶 1 + 𝑗𝜔𝑅𝐶
𝑅+
𝑗𝜔𝐶
𝑉𝑜 1 1
→ 𝐴𝑣 = = =
𝑉𝑖 1 + 𝑗𝜔𝑅𝐶 1 + 𝑗 𝑓ൗ
𝒇 𝟎
𝟏 𝟏
𝒇𝟎 = = 𝝉 = 𝟐𝝅𝑹𝑪
𝟐𝝅𝑹𝑪 𝝉
4
Introduction: High-pass Circuit
𝑉𝑖 𝑅 𝑉𝑖
In frequency domain: 𝑉𝑜 = =
1 1
𝑅+ 1+
𝑗𝜔𝐶 𝑗𝜔𝑅𝐶
𝑉𝑜 1 1
→ 𝐴𝑣 = = =
𝑉𝑖 1 − 𝑗 1 𝑓
1 − 𝑗 𝑜ൗ𝑓
𝜔𝑅𝐶
𝟏 𝟏
𝒇𝟎 = = 𝝉 = 𝟐𝝅𝑹𝑪
𝟐𝝅𝑹𝑪 𝝉
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Introduction: Octave vs Decade

If f2 = 2f1, then f2 is one octave above f1.
If f2 = 10f1, then f2 is one decade above f1

𝑓2 𝑓2
# 𝑜𝑓 𝑜𝑐𝑡𝑎𝑣𝑒 = 𝑙𝑜𝑔2 = 3.32𝑙𝑜𝑔10
𝑓1 𝑓1
𝑓2
# 𝑜𝑓 𝑑𝑒𝑐𝑎𝑑𝑒 = 𝑙𝑜𝑔10
𝑓1
Example:
2 GHz is one octave above 1 GHz
10 GHz is one decade above 1 GHz
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Introduction: 3dB definition

𝟏
3dB points are points at which the magnitude is that at mid-band
𝟐
frequency.
Power is halved. Voltage is scaled as:

𝑉𝑜 𝑉𝑜
=
1+𝑗 2
From which:
𝐴𝑑𝐵 = 20𝑙𝑜𝑔10 2 = 3𝑑𝐵
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Introduction: Gain
Amplifier has intrinsic gain: 𝑨𝟎
𝟏
Low-pass characteristics:
𝟏+𝒋𝒇ൗ𝒇
𝒉𝒊
𝒋𝒇ൗ𝒇
𝒍𝒐
High-pass characteristics: 𝒇
𝟏+𝒋 ൗ𝒇
𝒍𝒐
𝒇
𝟏 𝒋 ൗ𝒇
𝒍𝒐
Overall gain: 𝑨 𝒇 = 𝑨𝟎 𝒇 𝒇
𝟏+𝒋 ൗ𝒇 𝟏+𝒋 ൗ𝒇
𝒉𝒊 𝒍𝒐
At very high frequency, the gain becomes:

𝟐
𝑮 = −𝟐𝟎𝒍𝒐𝒈𝟏𝟎 𝟏 + 𝝎ൗ𝝎𝟎 ≈ −𝟐𝟎𝒍𝒐𝒈𝟏𝟎 𝝎ൗ𝝎𝟎
Slope of curve is -20db/decade

8
Model for general amplifying element

CC1 and CC2 are coupling capacitors (large): 𝜇𝐹.
Cin and Cout are parasitic capacitors (small): 𝑝𝐹.
Mid-band frequency: - Coupling capacitors are short circuits

- Parasitic capacitors are open circuits
𝒗𝒐𝒖𝒕
𝑨𝑴𝑩 =
𝒗𝒊𝒏
𝑹𝒊𝒏 𝑹𝑳
= 𝑨
𝑹𝒊𝒏 + 𝑹𝒈 𝑹𝑳 + 𝑹𝒐𝒖𝒕
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Low frequency model

Low frequency model: - Coupling capacitors are present.
- Parasitic capacitors are open circuits.
𝑅𝑖𝑛 𝑗𝜔𝑅𝑖𝑛 𝐶𝑐1

𝑣𝑎𝑏 = 𝒗𝒊𝒏 = 𝒗𝒊𝒏
1 1 + 𝑗𝜔𝐶𝑐1 𝑅𝑖𝑛 + 𝑅𝑔
𝑅𝑖𝑛 + 𝑅𝑔 +
𝑗𝜔𝐶𝑐1
𝑅𝑖𝑛 𝑗𝜔𝐶𝑐1 𝑅𝑖𝑛 + 𝑅𝑔
= 𝒗𝒊𝒏
𝑅𝑖𝑛 + 𝑅𝑔 1 + 𝑗𝜔𝐶𝑐1 𝑅𝑖𝑛 + 𝑅𝑔
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Low frequency model
1 1
Define: 𝑓𝑙1 = 𝑓𝑙2 =
2𝜋 𝑅𝑖𝑛 + 𝑅𝑔 𝐶𝑐1 2𝜋 𝑅𝑜𝑢𝑡 + 𝑅𝐿 𝐶𝑐2
𝑓
𝑅𝑖𝑛 𝑗𝜔𝐶𝑐1 𝑅𝑖𝑛 + 𝑅𝑔 𝑅𝑖𝑛 𝑗 ൗ𝑓
𝑙1
𝑣𝑎𝑏 = 𝒗𝒊𝒏 = 𝒗𝒊𝒏
𝑅𝑖𝑛 + 𝑅𝑔 1 + 𝑗𝜔𝐶𝑐1 𝑅𝑖𝑛 + 𝑅𝑔 𝑅𝑖𝑛 + 𝑅𝑔 1 + 𝑗 𝑓ൗ
𝑓𝑙1
𝑓
𝑅𝐿 𝑗𝜔𝐶𝑐2 𝑅𝐿 + 𝑅𝑜𝑢𝑡 𝑅𝐿 𝑗 ൗ𝑓
𝑙2
𝑣𝑜𝑢𝑡 = 𝑨𝒗𝒂𝒃 = 𝑨𝒗𝒂𝒃
𝑅𝐿 + 𝑅𝑜𝑢𝑡 1 + 𝑗𝜔𝐶𝑐2 𝑅𝐿 + 𝑜𝑢𝑡 𝑅𝐿 + 𝑅𝑜𝑢𝑡 1 + 𝑗 𝑓ൗ
𝑓𝑙2
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Low frequency model
𝑓 𝑓
𝑣𝑜𝑢𝑡 𝑅𝑖𝑛 𝑅𝐿 𝑗 ൗ𝑓𝑙1 𝑗 ൗ𝑓
𝑙2
Overall gain: =𝐴
𝑣𝑖𝑛 𝑅𝑖𝑛 + 𝑅𝑔 𝑅𝐿 + 𝑅𝑜𝑢𝑡 1 + 𝑗 𝑓ൗ 1 + 𝑗 𝑓ൗ
𝑓𝑙1 𝑓𝑙2
𝑓 𝑓
𝑣𝑜𝑢𝑡 𝑗 ൗ𝑓 𝑗 ൗ𝑓
𝑙1 𝑙2
= 𝑨𝑴𝑩
𝑣𝑖𝑛 𝑓 𝑓
1 + 𝑗 ൗ𝑓 1 + 𝑗 ൗ𝑓
𝑙1 𝑙2
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High frequency model

Low frequency model: - Coupling capacitors are short.
- Parasitic capacitors are present.
𝑹𝒊𝒏
𝑽𝒕𝒉𝟏 = 𝒗𝒊𝒏
𝑹𝒊𝒏 + 𝑹𝒈
Equivalent Thevenin Circuit
𝑹𝒕𝒉𝟏 = 𝑹𝒊𝒏 ∥ 𝑹𝒈
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𝑅𝑖𝑛 1
𝑣𝑎𝑏 = 𝒗𝒊𝒏
𝑅𝑖𝑛 + 𝑅𝑔 1 + 𝑗𝜔 𝑅𝑖𝑛 ∥ 𝑅𝑔 𝐶𝑖𝑛
𝑅𝑖𝑛 1 1
= 𝒗𝒊𝒏 where: 𝑓ℎ1 =
𝑅𝑖𝑛 + 𝑅𝑔 1 + 𝑗 𝑓ൗ 2𝜋 𝑅𝑖𝑛 ∥ 𝑅𝑔 𝐶𝑖𝑛
𝑓ℎ1
𝑅𝐿 1 𝑅𝐿 1
𝑣𝑜𝑢𝑡 = 𝑨𝒗𝒂𝒃 = 𝑨𝒗𝒂𝒃
𝑅𝐿 + 𝑅𝑜𝑢𝑡 1 + 𝑗𝜔𝐶𝑜𝑢𝑡 𝑅𝐿 ∥ 𝑅𝑜𝑢𝑡 𝑅𝐿 + 𝑅𝑜𝑢𝑡 1 + 𝑗 𝑓ൗ
𝑓ℎ2
1
where: 𝑓ℎ2 =
2𝜋 𝑅𝑜𝑢𝑡 ∥ 𝑅𝐿 𝐶𝑜𝑢𝑡
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𝑣𝑜𝑢𝑡 𝑅𝑖𝑛 𝑅𝐿 1 1
Overall gain: = 𝑨𝒗𝒂𝒃
𝑣𝑖𝑛 𝑅𝑖𝑛 + 𝑅𝑔 𝑅𝐿 + 𝑅𝑜𝑢𝑡 1 + 𝑗 𝑓ൗ 1 + 𝑗 𝑓ൗ
𝑓ℎ1 𝑓ℎ2
𝑣𝑜𝑢𝑡 1 1
= 𝑨𝑴𝑩
𝑣𝑖𝑛 𝑓 𝑓
1 + 𝑗 ൗ𝑓 1 + 𝑗 ൗ𝑓
ℎ1 ℎ2
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Example 1: Given 𝑅𝑜𝑢𝑡 = 3𝑘Ω, 𝑅𝑔 = 200Ω, 𝑅𝑖𝑛 = 12𝑘Ω , 𝑅𝐿 = 10𝑘Ω, 𝐶𝑐1 =
5𝜇𝐹, 𝐶𝑐2 = 1𝜇𝐹, 𝐶𝑖𝑛 = 200𝑝𝐹, 𝐶𝑜𝑢𝑡 = 40𝑝𝐹. Compute 𝑓𝑙1 , 𝑓𝑙2 , 𝑓ℎ1 , 𝑓ℎ2 .
1
𝑓𝑙1 = = 2.61 𝐻𝑧
2𝜋 × 12200 × 5 × 10−6
1
𝑓𝑙2 = = 12.2 𝐻𝑧
2𝜋 × 13000 × 1 × 10−6
1
𝑓ℎ1 = = 4.05 𝑀𝐻𝑧
2𝜋 × 12000 ∥ 200 × 2 × 10−10
1
𝑓ℎ2 = = 1.72 𝑀𝐻𝑧
2𝜋 × 10000 ∥ 3000 × 4 × 10−11
16
LF Response of CE Amplifier
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Considering the Effect of Each of the Three Capacitors Separately
Case 1: Consider 𝑪𝑪𝟏 , short circuit 𝑪𝑬 and 𝑪𝑪𝟐

𝑅𝐵 ∥ 𝑟𝜋
𝑉𝜋 = 𝑽𝒔𝒊𝒈
1
𝑅𝐵 ∥ 𝑟𝜋 + 𝑅𝑠𝑖𝑔 + 𝒔𝐶
𝑐1
𝒔 = 𝒋𝝎
𝑉𝑜 = −𝒈𝒎 𝑽𝝅 𝑹𝑪 ∥ 𝑹𝑳
𝑉𝑜 𝑅𝐵 ∥ 𝑟𝜋
=− 𝒈 𝑹 ∥ 𝑹𝑳
𝑉𝑠𝑖𝑔 𝑅𝐵 ∥ 𝑟𝜋 + 𝑅𝑠𝑖𝑔 𝒎 𝑪
𝑠
×
1
𝑠+
𝐶𝑐1 𝑅𝐵 ∥ 𝑟𝜋 + 𝑅𝑠𝑖𝑔
1 𝑅𝐵 ∥ 𝑟𝜋
𝑓𝑃1 = 𝑨𝑴𝑩 = − 𝒈𝒎 𝑹𝑪 ∥ 𝑹 𝑳
2𝜋𝐶𝑐1 𝑅𝐵 ∥ 𝑟𝜋 + 𝑅𝑠𝑖𝑔 𝑅𝐵 ∥ 𝑟𝜋 + 𝑅𝑠𝑖𝑔
18
Case 2: Consider 𝑪𝑬 , short circuit 𝑪𝑪𝟏 and 𝑪𝑪𝟐

𝑅𝐵 1
𝐼𝑏 = 𝑽𝒔𝒊𝒈
𝑅𝐵 + 𝑅𝑠𝑖𝑔 𝑅 ∥ 𝑅 1
𝐵 𝑠𝑖𝑔 + 𝛽 + 1 𝑟𝑒 + 𝒔𝐶
𝐸
𝒔 = 𝒋𝝎
𝑉𝑜 = −𝜷𝑰𝒃 𝑹𝑪 ∥ 𝑹𝑳
𝑉𝑜 𝑅𝐵 𝜷 𝑹𝑪 ∥ 𝑹 𝑳
=−
𝑉𝑠𝑖𝑔 𝑅𝐵 + 𝑅𝑠𝑖𝑔 𝑅𝐵 ∥ 𝑅𝑠𝑖𝑔 + 𝛽 + 1 𝑟𝑒
𝑠
×
1
𝑠+ 𝑅 ∥ 𝑅𝑠𝑖𝑔
𝐶𝐸 𝑟𝑒 + 𝐵 ൘𝛽 + 1
1
𝑓𝑃2 =
𝑅 ∥ 𝑅𝑠𝑖𝑔
2𝜋𝐶𝐸 𝑟𝑒 + 𝐵 ൘𝛽 + 1
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Case 3: Consider 𝑪𝑪𝟐 , short circuit 𝑪𝑬 and 𝑪𝑪𝟏

𝑅𝐵 ∥ 𝑟𝜋
𝑉𝜋 = 𝑽𝒔𝒊𝒈
𝑅𝐵 ∥ 𝑟𝜋 + 𝑅𝑠𝑖𝑔
𝒔 = 𝒋𝝎 𝑹𝑪
𝑉𝑜 = −𝒈𝒎 𝑽𝝅 𝑹𝑳
𝟏
𝑹𝑪 + 𝒔𝑪 + 𝑹𝑳
𝟐
𝑉𝑜 𝑅𝐵 ∥ 𝑟𝜋
=− 𝒈 𝑹 ∥ 𝑹𝑳
𝑉𝑠𝑖𝑔 𝑅𝐵 ∥ 𝑟𝜋 + 𝑅𝑠𝑖𝑔 𝒎 𝑪
𝑠
×
1
𝑠+
𝐶𝑐2 𝑅𝐶 + 𝑅𝐿
1
𝑓𝑃3 =
2𝜋𝐶𝑐2 𝑅𝐶 + 𝑅𝐿
20
Case 1 Case 2
Case 3
21
𝑉𝑜 𝑠 𝑠 𝑠
= −𝐴𝑀
𝑉𝑠𝑖𝑔 𝑠 + 𝜔𝑃1 𝑠 + 𝜔𝑃2 𝑠 + 𝜔𝑃3
If fP1, fP2 and fP3 are widely separated: 𝑓𝐿 = max(𝑓𝑃1 , 𝑓𝑃2 , 𝑓𝑃3 )
1 1 1 1
If fP1, fP2 and fP3 are close together: 𝑓𝐿 ≈ + + = 𝑓𝑃1 + 𝑓𝑃2 + 𝑓𝑃3
2𝜋 𝑅𝑐1 𝐶𝑐1 𝑅𝐸 𝐶𝐸 𝑅𝑐3 𝐶𝑐3
Example 2: Select appropriate values for 𝐶𝑐1 , 𝐶𝑐2 and 𝐶𝐸 for the CE amplifier which has
𝑅𝐵 = 100𝑘Ω, 𝑅𝐶 = 8𝑘Ω, 𝑅𝐿 = 5𝑘Ω, 𝑅𝑠𝑖𝑔 = 5𝑘Ω, 𝛽 = 100, 𝑔𝑚 = 4𝑚𝐴/𝑉 and 𝑟𝜋 =
2.5𝑘Ω. It is required 𝑓𝐿 = 100𝐻𝑧.
22
LF Response of CS Amplifier
23
𝑅𝐺
𝑉𝑔 = 𝑽𝒔𝒊𝒈
1
𝑅𝐺 + 𝑅𝑠𝑖𝑔 +
𝒔𝐶𝑐1
𝑅𝐺 𝑠
𝑉𝑔 = 𝑽𝒔𝒊𝒈
𝑅𝐺 + 𝑅𝑠𝑖𝑔 𝑠 + 1
𝐶𝑐1 𝑅𝐺 + 𝑅𝑠𝑖𝑔
𝑉𝑔 𝑠
𝐼𝑑 = = 𝑔𝑚 𝑉𝑔 𝑔
1 1 𝑠+𝐶
1 +
𝑔𝑚 𝑠𝐶𝑠 𝑠
𝑓𝑃1 =
2𝜋𝐶𝑐1 𝑅𝐺 + 𝑅𝑠𝑖𝑔 𝑅𝐷
𝑔𝑚 𝐼𝑜 = −𝐼𝑑
𝑓𝑃2 = 1
𝑅𝐷 + 𝑅𝐿 + 𝒔𝐶
2𝜋𝐶𝑠 𝑐2
1 𝑅𝐷 𝑅𝐿 𝑠
𝑓𝑃3 = 𝑉𝑜 = −𝐼𝑑
2𝜋𝐶𝑐2 𝑅𝐷 + 𝑅𝐿 𝑅𝐷 + 𝑅𝐿 𝑠 + 1
𝐶𝑐2 𝑅𝐷 + 𝑅𝐿
24
𝑉𝑜 𝑅𝐺 𝑠 𝑠 𝑠
=− 𝒈 𝑅 ∥ 𝑅𝐿
𝑉𝑠𝑖𝑔 𝑅𝐺 + 𝑅𝑠𝑖𝑔 𝒎 𝐷 𝑠 + 𝜛𝑃1 𝑠 + 𝜛𝑃2 𝑠 + 𝜛𝑃3
𝑉𝑜 𝑠 𝑠 𝑠
= 𝑨𝑴𝑩
𝑉𝑠𝑖𝑔 𝑠 + 𝜛𝑃1 𝑠 + 𝜛𝑃2 𝑠 + 𝜛𝑃3
𝑅𝐺
where: 𝑨𝑴𝑩 = − 𝒈 𝑅 ∥ 𝑅𝐿
𝑅𝐺 + 𝑅𝑠𝑖𝑔 𝒎 𝐷
25
Gate Capacitive Effect

The gate capacitive effect can be modeled by the capacitances Cgs, Cgd.
1
❖ Triode region: 𝐶𝑔𝑠 = 𝐶𝑔𝑑 = 𝑊𝐿𝐶𝑜𝑥
2
2
❖ Saturation region: 𝐶𝑔𝑠 = 𝑊𝐿𝐶𝑜𝑥 𝐶𝑔𝑑 = 0
3
❖ Cutoff region: 𝐶𝑔𝑠 = 0 𝐶𝑔𝑑 = 0
Equivalent circuit for the case in which Equivalent circuit with 𝐶𝑑𝑏 neglected (to
the source is connected to the substrate simplify analysis)
26
HF Response of CS Amplifier
CS Amplifier HF Equivalent circuit
Simplified HF Equivalent circuit

27
𝑉𝑜 ≃ −𝑔𝑚 𝑅𝐿′ 𝑉𝑔𝑠
Simplified HF Equivalent circuit

𝑉 𝑅𝐺
Midband gain: 𝐴𝑀𝐵 = 𝑉 𝑜 = − 𝑅 𝑔𝑚 𝑅𝐿′
𝑠𝑖𝑔 𝐺 +𝑅𝑠𝑖𝑔
Load current: 𝐼𝐿′ = 𝑔𝑚 𝑉𝑔𝑠 − 𝐼𝑔𝑑
At frequencies in the vicinity of 𝑓𝐻 : 𝐼𝐿′ ≈ 𝑔𝑚 𝑉𝑔𝑠 → 𝑉𝑜 ≃ −𝑔𝑚 𝑅𝐿′ 𝑉𝑔𝑠
The current 𝐼𝑔𝑑 can now be found as: 𝐼𝑔𝑑 = 𝑠𝐶𝑔𝑑 𝑉𝑔𝑠 − 𝑉𝑜 = 𝑠𝐶𝑔𝑑 𝑉𝑔𝑠 + 𝑔𝑚 𝑅𝐿′ 𝑉𝑔𝑠
= 𝑠𝐶𝑔𝑑 1 + 𝑔𝑚 𝑅𝐿′ 𝑉𝑔𝑠
28
❖ Therefore, the left hand side of XX’ could be replaced by 𝐶𝑒𝑞, where
𝑠𝐶𝑒𝑞 𝑉𝑔𝑠 = 𝑠𝐶𝑔𝑑 1 + 𝑔𝑚 𝑅𝐿′ 𝑉𝑔𝑠 or 𝑪𝒆𝒒 = 𝑪𝒈𝒅 𝟏 + 𝒈𝒎 𝑹′𝑳
Miller effect
𝐶𝑖𝑛 = 𝐶𝑔𝑠 + 𝐶𝑒𝑞 = 𝐶𝑔𝑠 + 𝐶𝑔𝑑 1 + 𝑔𝑚 𝑅𝐿′

′
𝑅𝑠𝑖𝑔 = 𝑅𝑠𝑖𝑔 ∥ 𝑅𝐺
29
𝑉𝑔𝑠 can be written as:
𝑅𝐺 1 𝑅𝐺 1
𝑉𝑔𝑠 = 𝑉 = 𝑉
𝑅𝐺 + 𝑅𝑠𝑖𝑔 𝑠𝑖𝑔 𝑗𝑓 𝑅𝐺 + 𝑅𝑠𝑖𝑔 𝑠𝑖𝑔 1 + 𝑠
1+ 𝜔0
𝑓0
𝟏
where 𝑓0 is the 3dB frequency: 𝒇𝟎 =
𝟐𝝅𝑪𝒊𝒏 𝑹′𝒔𝒊𝒈
′
𝐶𝑖𝑛 = 𝐶𝑔𝑠 + 𝐶𝑒𝑞 = 𝐶𝑔𝑠 + 𝐶𝑔𝑑 1 + 𝑔𝑚 𝑅𝐿′ 𝑅𝑠𝑖𝑔 = 𝑅𝑠𝑖𝑔 ∥ 𝑅𝐺
30
Example 3: Find the mid-band gain 𝐴𝑀𝐵 and the upper 3-dB frequency 𝑓𝐻 of a CS
amplifier fed with a signal source having an internal resistance 𝑅𝑠𝑖𝑔 = 100𝑘Ω. The
amplifier has 𝑅𝐺 = 4.7𝑀Ω, 𝑅𝐷 = 𝑅𝐿 = 15𝑘Ω, 𝑔𝑚 = 1𝑚𝐴/𝑉, 𝑟𝑜 = 150𝑘Ω, 𝐶𝑔𝑠 =
1𝑝𝐹, 𝐶𝑔𝑑 = 0.4𝑝𝐹.
31
BJT High Frequency model
Emitter-base capacitance 𝐶𝜋 is in the range of a few picofarads.
Collector-base capacitance 𝐶𝜇 is in the range of a fraction of pF to a few pF.
𝑟𝑥 is added to model the resistance of the silicon material of the base

region between the base terminal B and a fictitious internal, or intrinsic,
base terminal that is right under the emitter region.
32
HF Response of CE Amplifier
33
𝑉𝑜 𝑅𝐵 𝑟𝜋
Midband gain: 𝐴𝑀𝐵 = =− 𝑔𝑚 𝑅𝐿′
𝑉𝑠𝑖𝑔 𝑅𝐵 + 𝑅𝑠𝑖𝑔 𝑟𝜋 + 𝑟𝑥 + 𝑅𝐵 ∥ 𝑅𝑠𝑖𝑔
𝑉𝑜 1
And: = 𝐴𝑀𝐵
𝑉𝑠𝑖𝑔 𝑗𝑓
1+
𝑓0
34
𝟏
the 3dB frequency: 𝒇𝟎 =
𝟐𝝅𝑪𝒊𝒏 𝑹′𝒔𝒊𝒈 Miller effect
′
𝐶𝑖𝑛 = 𝐶𝜋 + 𝐶𝑒𝑞 = 𝐶𝜋 + 𝐶𝜇 1 + 𝑔𝑚 𝑅𝐿′ 𝑅𝑠𝑖𝑔 = 𝑅𝑠𝑖𝑔 ∥ 𝑅𝐺
35
Example 4: It is required to find the mid-band gain and the upper 3-dB
frequency of the common-emitter amplifier. Given: 𝑉𝐶𝐶 = 𝑉𝐸𝐸 = 10𝑉, 𝐼 =
1𝑚𝐴, 𝑅𝐵 = 100𝑘Ω, 𝑅𝑠𝑖𝑔 = 5𝑘Ω, 𝑅𝐿 = 5𝑘Ω, 𝛽0 = 100, 𝑉𝐴 = 100𝑉, 𝐶𝜇 =
1𝑝𝐹, 𝐶𝜋 = 7𝑝𝐹 and 𝑟𝑥 = 50Ω.
36
Miller’s Theorem
In the analysis of HF response of CE and CS amplifiers, a technique for
replacing the bridging capacitance by an equivalent input capacitance.
This technique is based on a general theorem known as Miller’s

theorem.
Assume that 𝑽𝟐 = 𝑲𝑽𝟏 . Miller’s theorem states that impedance Z can be

replaced by two impedances:
𝒁 𝒁
𝒁𝟏 = 𝒁𝟐 =
𝟏−𝑲 𝟏 − 𝟏ൗ𝑲
37
Miller’s Theorem
Example 5: An ideal voltage amplifier having a gain of −100𝑉/𝑉 with an
impedance Z connected between its output and input terminals. Find the
Miller equivalent circuit when Z is
a. A 1𝑀Ω resistance.
b. a 1pF capacitance. In each case, use the equivalent circuit to
determine 𝑉𝑜ൗ𝑉𝑠𝑖𝑔.
38
Analyzing using Miller’s theorem

The value of and can be determined
using Miller’s theorem:
𝐶1 = 𝐶𝑔𝑑 1 − 𝐾
𝐶2 = 𝐶𝑔𝑑 1 − 1ൗ𝐾
Generalized HF equivalent
𝑉
where: 𝐾 = 𝑜൘𝑉 = −𝑔𝑚 𝑅𝐿′ circuit for the CS amplifier
𝑔𝑠
HF equivalent circuit model of the CS amplifier

after the application of Miller’s theorem
39
Analyzing using Miller’s theorem

𝑪𝟏 and 𝑪𝟐 will be used to determine the overall transfer function.
𝐶1 = 𝐶𝑔𝑑 1 − 𝐾 = 𝐶𝑔𝑑 1 + 𝑔𝑚 𝑅𝐿′ 𝐶2 = 𝐶𝑔𝑑 1 − 1ൗ𝐾 = 𝐶𝑔𝑑 1 + 1ൗ𝑔 𝑅′

𝑚 𝐿
1
At the input side: 𝑓ℎ𝑖 = ′
2𝜋 𝐶𝑔𝑠 + 𝐶1 𝑅𝑠𝑖𝑔
1
At the output side: 𝑓ℎ𝑜 =
2𝜋 𝐶𝑔𝑠 + 𝐶2 𝑅𝐿′
𝑉𝑜 −𝑔𝑚 𝑅𝐿′
The approximated transfer function: ′ =
𝑉𝑠𝑖𝑔 𝑠 𝑠
1+ 1+
𝜔ℎ𝑖 𝜔ℎ𝑜
1
𝑓𝐻 =
1 1
+
𝑓ℎ𝑖2 𝑓ℎ𝑜
2
HF equivalent circuit model of the CS amplifier
after the application of Miller’s theorem
40
The HF Gain Function

The amplifier gain can be expressed in the general form: 𝑨 𝒔 = 𝑨𝑴 𝑭𝑯 (𝒔)
1 + 𝑠Τ𝜔𝑧1 1 + 𝑠Τ𝜔𝑧2 … 1 + 𝑠Τ𝜔𝑧𝑛
where: 𝑭𝑯 𝒔 =
1 + 𝑠Τ𝜔𝑃1 1 + 𝑠Τ𝜔𝑃2 … 1 + 𝑠Τ𝜔𝑃𝑛
The designer needs to estimate the value of the upper 3-dB frequency 𝑓𝐻
→ particularly interested in the part of the HF band close to the midband.
1
If the dominant pole exists: 𝑭𝑯 𝒔 ≈
1 + 𝑠Τ𝜔𝑃1
If the dominant pole does not exist: For simplicity, consider the following case:
1 + 𝑠Τ𝜔𝑧1 1 + 𝑠Τ𝜔𝑧2
𝑭𝑯 𝒔 =
1 + 𝑠Τ𝜔𝑃1 1 + 𝑠Τ𝜔𝑃2
41

The magnitude of 𝑓𝐻 can be written as:
2 2
2
1 + 𝜔2 Τ𝜔𝑧1 1 + 𝜔2 Τ𝜔𝑧2
𝐹𝐻 (𝑗𝜔) = 2 2
1 + 𝜔 2 Τ𝜔𝑃1 1 + 𝜔 2 Τ𝜔𝑃1
2 1
By definition 𝜔 = 𝜔𝐻 . 𝐹𝐻 = , thus:
2
2 2
1 1 + 𝜔2 Τ𝜔𝑧1 1 + 𝜔2 Τ𝜔𝑧2
= 2 2
2 1 + 𝜔 2 Τ𝜔𝑃1 1 + 𝜔 2 Τ𝜔𝑃1
4
1 1 2 2
Since 𝜔𝐻 < 𝜔𝑃 , 𝜔𝑍 , we can neglect 𝜔𝐻 : 𝜔𝐻 ≈ 1൘ 2 + 2 − 2 − 2
𝜔𝑃1 𝜔𝑃2 𝜔𝑍1 𝜔𝑍2
This relationship can be extended to any number of poles and zeros:
1 1 2 2
𝜔𝐻 ≈ 1൘ 2 + 2 +⋯ − 2 + 2 +⋯
𝜔𝑃1 𝜔𝑃2 𝜔𝑍1 𝜔𝑍2
42

Example 6: The high-frequency response of an amplifier is characterized
by the transfer function:
1 − 𝑠Τ105
𝐹𝐻 𝑠 =
1 + 𝑠Τ104 1 + 𝑠Τ4 × 105
Determine the 3-dB frequency approximately and exactly.
43
Analyzing using Exact Method

Node equation at the drain provides:
𝑉𝑜
𝑠𝐶𝑔𝑑 𝑉𝑔𝑠 − 𝑉𝑜 = 𝑔𝑚 𝑉𝑔𝑠 + ′ + 𝑠𝐶𝐿 𝑉𝑜
𝑅𝐿
−𝑉𝑜 1 + 𝑠 𝐶𝐿 + 𝐶𝑔𝑑 𝑅𝐿′
→ 𝑉𝑔𝑠 =
𝑔𝑚 𝑅𝐿′ 1 − 𝑠 𝐶𝑔𝑑 Τ𝑔𝑚 Generalized HF equivalent
circuit for the CS amplifier
Node equation at G provides:
𝐼𝑖 = 𝑠𝐶𝑔𝑠 𝑉𝑔𝑠 + 𝑠𝐶𝑔𝑑 𝑉𝑔𝑠 − 𝑉𝑜
Then:
′ ′ ′
𝑉𝑠𝑖𝑔 = 𝑉𝑔𝑠 1 + 𝑠 𝐶𝑔𝑠 + 𝐶𝑔𝑑 𝑅𝑠𝑖𝑔 − 𝑠𝐶𝑔𝑠 𝑅𝑠𝑖𝑔 𝑉𝑜
44

𝑉𝑜 −𝑔𝑚 𝑅𝐿′ 1 − 𝑠 𝐶𝑔𝑑 Τ𝑔𝑚
The amplifier gain is: ′ =
𝑉𝑠𝑖𝑔 1 + 𝑠𝑨 + 𝑠 2 𝑩
′
where: 𝑨 = 𝐶𝑔𝑠 + 𝐶𝑔𝑑 1 + 𝑔𝑚 𝑅𝐿′ 𝑅𝑠𝑖𝑔 + 𝐶𝐿 + 𝐶𝑔𝑑 𝑅𝐿′
′
𝑩= 𝐶𝐿 + 𝐶𝑔𝑑 𝐶𝑔𝑠 + 𝐶𝐿 𝐶𝑔𝑑 𝑅𝑠𝑖𝑔 𝑅𝐿′
The transfer function has a second-order denominator, and thus the amplifier
has two poles. Also the numerator is of the first order.
45

𝑉𝑜 −𝑔𝑚 𝑅𝐿′ 1 − 𝑠 𝐶𝑔𝑑 Τ𝑔𝑚
The amplifier gain is: ′ =
𝑉𝑠𝑖𝑔 1 + 𝑠𝑨 + 𝑠 2 𝑩
Zeros: 𝜔𝑃1 = ∞ 𝜔𝑃2 = 𝑔𝑚 Τ𝐶𝑔𝑑
Poles: the denominator polynomial 𝐷(𝑠) can be expressed as:
𝑠 𝑠 1 1 𝑠2
𝐷 𝑠 = 1+ 1+ =1+𝑠 + +
𝜔𝑃1 𝜔𝑃2 𝜔𝑃1 𝜔𝑃2 𝜔𝑃1 𝜔𝑃2
1 2
1
≈1+𝑠 +𝑠
𝜔𝑃1 𝜔𝑃1 𝜔𝑃2
1 1
This gives: 𝜔𝑃1 ≈ =
𝐴 𝐶𝑔𝑠 + 𝐶𝑔𝑑 1 + 𝑔𝑚 𝑅𝐿′ 𝑅𝑠𝑖𝑔
′
+ 𝐶𝐿 + 𝐶𝑔𝑑 𝑅𝐿′
′
1 𝐶𝑔𝑠 + 𝐶𝑔𝑑 1 + 𝑔𝑚 𝑅𝐿′ 𝑅𝑠𝑖𝑔 + 𝐶𝐿 + 𝐶𝑔𝑑 𝑅𝐿′
𝜔𝑃2 = = ′
𝐵 𝐶𝐿 + 𝐶𝑔𝑑 𝐶𝑔𝑠 + 𝐶𝐿 𝐶𝑔𝑑 𝑅𝑠𝑖𝑔 𝑅𝐿′
46
Example 7: Consider an IC CS amplifier for which 𝑔𝑚 = 1.25𝑚𝐴/𝑉 2 ,

′
𝐶𝑔𝑠 = 20𝑓𝐹 , 𝐶𝑔𝑑 = 5𝑓𝐹 , 𝐶𝐿 = 25𝑓𝐹 , 𝑅𝑠𝑖𝑔 = 10𝑘Ω , 𝑅𝐿′ = 10𝑘Ω .
Determine 𝑓𝐻 using
a. the Miller approximation.
b. Miller’s theorem.
c. Determine the frequencies of the two poles and the zero and hence
the 3-dB frequency.
47
HF Response of the CG Amplifiers

❖ CS and CE amplifier:
• Substantial gain at mid-band frequencies.
• Low 𝑓𝐻 due to the large input capacitance 𝐶𝑖𝑛 (Miller effect).
→ In order to obtain wide bandwidth: need circuit configurations that do

not suffer from the Miller effect: Common Gate (CG) circuit.
48
HF Response of the CG Amplifiers

If 𝑟0 is neglected: the circuit is greatly simplified.
1 1
Two poles: 𝑓𝑃1 = 𝑓𝑃2 =
1 2𝜋𝑅𝐿 𝐶𝑔𝑠 + 𝐶𝐿
2𝜋𝐶𝑔𝑠 𝑅𝑠𝑖𝑔 ∥
𝑔𝑚
If 𝑟0 is not neglected: reading Ref. page 746-750.
49
HF Response of the Source and

Emitter Amplifiers
Major advantage of the source follower: its excellent high-frequency response.
𝑅𝐿 ∥ 𝑟𝑜 1
Midband gain: 𝐴𝑀 = 𝑅𝑜 = ∥𝑟
𝑅𝐿 ∥ 𝑟𝑜 +
1 𝑔𝑚 𝑜
𝑔𝑚
Equivalent circuit of Source Simplified equivalent circuit of

Follower Amplifier Source Follower Amplifier
50
Exercises
Exercise 4: The following figure shows the high-frequency equivalent
circuit of a CS amplifier with a resistance Rs connected in the source lead.
The purpose of this problem is to show that the value of Rs can be used to
control the gain and bandwidth of the amplifier, specifically to allow the
designer to trade gain for increased bandwidth.
a. Derive an expression for the low-frequency voltage gain.
b. Derive Rgs and Rgd.
c. Let 𝑅𝑠𝑖𝑔 = 100𝑘Ω, 𝑔𝑚 = 4𝑚𝐴/𝑉, 𝑅𝐿′ = 5𝑘Ω, 𝐶𝑔𝑠 = 𝐶𝑔𝑑 = 1𝑝𝐹.
Determine the low frequency gain and 3dB frequency 𝑓𝐻 for 3 cases: 𝑅𝑠 =
0, 𝑅𝑠 = 100Ω and, 𝑅𝑠 = 250Ω. Comment.
𝑅𝑠 = 0: 𝐴𝑣 = −20, 𝑓𝐻 = 72𝑘𝐻𝑧
𝑅𝑠 = 100: 𝐴𝑣 = −14.3, 𝑓𝐻 = 99𝑘𝐻𝑧
𝑅𝑠 = 250: 𝐴𝑣 = −10, 𝑓𝐻 = 137𝑘𝐻𝑧

51
A1 - BJT High Frequency model
❖ The transistor data sheets do not usually specify the value of 𝐶𝜋 .
❖ Rather, the behavior of β (or hfe) versus frequency is normally given.
❖ Need to derive an expression for hfe to determine 𝐶𝜋 and 𝐶𝜇
52
A1 - BJT High Frequency model
The short-circuit collector current 𝐼𝑐 can be written as: 𝐼𝑐 = 𝑔𝑚 − 𝑠𝐶𝜇 𝑉𝜋

𝐼𝑏
And 𝑉𝜋 = 𝐼𝑏 𝑟𝜋 ∥ 𝐶𝜋 ∥ 𝐶𝜇 =
1Τ𝑟𝜋 + 𝑠𝐶𝜋 + 𝑠𝐶𝜇
𝐼𝑐 𝑔𝑚 − 𝑠𝐶𝜇 𝑔𝑚 𝑟𝜋
Then ℎ𝑓𝑒 ≡ = ≃
Τ
𝐼𝑏 1 𝑟𝜋 + 𝑠𝐶𝜋 + 𝑠𝐶𝜇 1 + 𝑠 𝐶𝜋 + 𝐶𝜇 𝑟𝜋
53
Q&A
54

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Electronic Circuits Chapter 5: Frequency Response: Dr. Dung Trinh

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Dr.

Dung Trinh HCMUT / 2017

Dr. Dung Trinh

Low frequency and high frequency models

Low frequency response of CS and CE Amplifier

High frequency model of MOSFET and BJT

Miller’s Theorem and Exact Analysis

HF Response of CG, Source and Emitter Followers

Introduction: Low-pass Circuit

Introduction: High-pass Circuit

Introduction: Octave vs Decade

If f2 = 10f1, then f2 is one decade above f1

Introduction: 3dB definition

Power is halved. Voltage is scaled as:

𝐴𝑑𝐵 = 20𝑙𝑜𝑔10 2 = 3𝑑𝐵

At very high frequency, the gain becomes:

Slope of curve is -20db/decade

Model for general amplifying element

Cin and Cout are parasitic capacitors (small): 𝑝𝐹.

Mid-band frequency: - Coupling capacitors are short circuits

Low frequency model

𝑅𝑖𝑛 𝑗𝜔𝑅𝑖𝑛 𝐶𝑐1

Low frequency model

Low frequency model

High frequency model

High frequency model

High frequency model

High frequency model

Case 1: Consider 𝑪𝑪𝟏 , short circuit 𝑪𝑬 and 𝑪𝑪𝟐

Case 2: Consider 𝑪𝑬 , short circuit 𝑪𝑪𝟏 and 𝑪𝑪𝟐

Case 3: Consider 𝑪𝑪𝟐 , short circuit 𝑪𝑬 and 𝑪𝑪𝟏

Gate Capacitive Effect

❖ Cutoff region: 𝐶𝑔𝑠 = 0 𝐶𝑔𝑑 = 0

CS Amplifier HF Equivalent circuit

Simplified HF Equivalent circuit

𝑉𝑜 ≃ −𝑔𝑚 𝑅𝐿′ 𝑉𝑔𝑠

Simplified HF Equivalent circuit

Load current: 𝐼𝐿′ = 𝑔𝑚 𝑉𝑔𝑠 − 𝐼𝑔𝑑

At frequencies in the vicinity of 𝑓𝐻 : 𝐼𝐿′ ≈ 𝑔𝑚 𝑉𝑔𝑠 → 𝑉𝑜 ≃ −𝑔𝑚 𝑅𝐿′ 𝑉𝑔𝑠

𝑠𝐶𝑒𝑞 𝑉𝑔𝑠 = 𝑠𝐶𝑔𝑑 1 + 𝑔𝑚 𝑅𝐿′ 𝑉𝑔𝑠 or 𝑪𝒆𝒒 = 𝑪𝒈𝒅 𝟏 + 𝒈𝒎 𝑹′𝑳

𝐶𝑖𝑛 = 𝐶𝑔𝑠 + 𝐶𝑒𝑞 = 𝐶𝑔𝑠 + 𝐶𝑔𝑑 1 + 𝑔𝑚 𝑅𝐿′

BJT High Frequency model

Emitter-base capacitance 𝐶𝜋 is in the range of a few picofarads.

Collector-base capacitance 𝐶𝜇 is in the range of a fraction of pF to a few pF.

𝑟𝑥 is added to model the resistance of the silicon material of the base

This technique is based on a general theorem known as Miller’s

Assume that 𝑽𝟐 = 𝑲𝑽𝟏 . Miller’s theorem states that impedance Z can be

Analyzing using Miller’s theorem

HF equivalent circuit model of the CS amplifier

Analyzing using Miller’s theorem

𝐶1 = 𝐶𝑔𝑑 1 − 𝐾 = 𝐶𝑔𝑑 1 + 𝑔𝑚 𝑅𝐿′ 𝐶2 = 𝐶𝑔𝑑 1 − 1ൗ𝐾 = 𝐶𝑔𝑑 1 + 1ൗ𝑔 𝑅′

The HF Gain Function

The HF Gain Function

This relationship can be extended to any number of poles and zeros:

The HF Gain Function

Analyzing using Exact Method

Node equation at G provides: