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    murali
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    An ideal p+n silicon diode with a lightly doped n-type region of 1015 cm-3 is initially at thermal equilibrium. A 1 μA current source is then applied in reverse bias. The diode is to be used in an LC circuit with a 10 nH inductor to achieve an oscillation frequency of 5 GHz. The minimum thickness of the n-region for a silicon diode to avalanche breakdown at 300V reverse bias is needed, given the donor doping of 1015 cm-3 and relative permittivity of 11.8.

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    An ideal p+n silicon diode with a lightly doped n-type region of 1015 cm-3 is initially at thermal equilibrium. A 1 μA current source is then applied in reverse bias. The diode is to be used in an LC circuit with a 10 nH inductor to achieve an oscillation frequency of 5 GHz. The minimum thickness of the n-region for a silicon diode to avalanche breakdown at 300V reverse bias is needed, given the donor doping of 1015 cm-3 and relative permittivity of 11.8.

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    10 views3 pages

    HW 1

    Uploaded by

    murali
    An ideal p+n silicon diode with a lightly doped n-type region of 1015 cm-3 is initially at thermal equilibrium. A 1 μA current source is then applied in reverse bias. The diode is to be used in an LC circuit with a 10 nH inductor to achieve an oscillation frequency of 5 GHz. The minimum thickness of the n-region for a silicon diode to avalanche breakdown at 300V reverse bias is needed, given the donor doping of 1015 cm-3 and relative permittivity of 11.8.

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    of 3

    Consider an ideal p+n Si diode with a doping level in lowly doped n type region of 10 15.

    The reverser
    saturation current is 1PA and the area is 10-4. Initially, the diode at thermal equilibrium with its terminal
    shorted. At t=0, a current source bias of 1UA is applied in the reverse conduction mode as indicated in
    the figure below
    A diode is to be used in an LC circuit with a 10-nH inductor. If the desired oscillation frequency
    of the circuit is f-5 GHz, at what voltage be the diode biased at? [NA 5x10" cm3 and ND 10cm3.
    The relative permittivity of silicon is 11.8 and the permittivity of free space is 8.85x10 F/cm.
    Assume the cross-sectional area of the diode is 2x10 cm 153 2]
    A Silicon p+-n diode has donor doping of 1015 cm-3, and relative permittivity of 11.8. What will
    be the minimum thickness of the n region that will ensure avalanche breakdown at 300 V
    reverse bias voltage? State any assumptions that you make.

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