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Ransistor: Ffect
Ransistor: Ffect
Ransistor: Ffect
(FIELD EFFECT
TRANSISTOR)
Engr. Jess
Rangcasajo
jessrangcasajo@gmail.com
ECE 321 Instructor
FET’S VS. BJT’S
Similarities:
Amplifiers
Switching Device
Impedance Matching Circuits
DIFFERENCES
FET’ BJT’
✔
s
Voltage controlled ✔ s controlled devices
Current
devices ✔ Lower impedance
✔ Higher input impedance ✔ Higher sensitive
✔ Less sensitive to temp. ✔ Bipolar device
variations
✔ Bigger IC
✔ Unipolar device
✔ Smaller/ Easily Integrated
Chips
TYPES OF FET
- Jointly developed an
procedure experimental for
measuringthe
characteristics of FET in
1955
JFET
(JUNCTION FET)
CONSTRUCTION AND CHARACTERISTICS OF
JFET
Is a three-terminal device with one terminal
capable of controlling the current between the
other two.
3 terminals are:
1. DRAIN (D)
2. SOURCE (S) – connected to n-channel
3. GATE (G) – connected to p-channel
Two types of
1. n-channel JFET
2. p-channel
Drain Drain
Gate Gate
G G
S S
n-channel p-channel
•Drain (D) and Source (S) are connected to the n-channel
•Gate (G) is connected to the p-type material
JFET
OPERATING
CHARACTERISTICS
JFET is always operated with the gate-
source PN junction reversed biased.
The JFET can be used as a variable resistor, where VGS controls the drain-
source resistance (rd). As VGS becomes more negative, the resistance (rd)
increases
where ro is the resistance with VGS=0 and rd is the
resistance at a particular level of VGS.
FOR EXAMPLE:
1. For an n-channel JFET with 𝑟𝑜 = 10𝑘Ω 𝑉𝐺𝑆
=
10𝑘
𝑟𝑑 = Ω −3
(1
−6
− )2
𝑟𝑑 =
40𝑘Ω
P-CHANNEL JFETS
VGS = 0V, ID =
IDSS
𝐼𝐶 = 𝑓 𝐼𝐵 = 𝛽𝐼𝑏
Constant
Step 1:
2
𝑉𝐺𝑆
Solving for 𝑉𝐺𝑆 = 𝐼𝐷 = 𝐷𝑆𝑆 1 , I =
𝑉 D
0, 𝐼 −
Step 2: 𝑝
I
DSS
2
𝑉𝐺𝑆
Solving for 𝑉𝐺𝑆 = 𝑉𝑝(𝑉𝐺𝑆 𝑜𝑓𝑓 𝐼𝐷 = 𝐷𝑆𝑆 1 , ID = 0
𝑉
), 𝐼 − A
𝑝
Step 3:
𝑉𝐺𝑆
2
𝐼 𝑉
𝐼𝐷 = 𝐷𝑆𝑆 1 𝐼𝐷 = 𝐷𝑆𝑆 𝑉𝐺𝑆 =
𝑉
𝐼 − 42 𝑝
𝑝
𝐼𝐷 𝐼
𝑉𝐺𝑆 = 𝑉𝑝 1 𝐷𝑆𝑆
− 𝐼 𝑉𝐺𝑆≅ 0.3𝑉 𝑝𝐼 𝐷 = 2
𝐷𝑆𝑆
For Example:
Sketch the transfer curve defined by 𝐼𝐷𝑆𝑆 = 12𝑚𝐴 and 𝑉𝑝 = −6𝑉.
By shorthand method,
@ 𝑉
𝑉𝐺𝑆 = 𝑝 −6 2 =
2=
−𝟑𝑽
𝐼 𝐷𝑆𝑆
𝐼𝐷 = 12𝑚𝐴 4 = 𝟑𝒎𝑨
4
=
@
𝐼𝐷𝑆𝑆
12𝑚𝐴
𝐼𝐷 = 2= 2 = 𝟔𝒎𝑨
Depletion-Type
Enhancement-Typ
e
DEPLETION-TYPE MOSFET CONSTRUCTION
The Drain (D) and Source (S)
connect to the to n-doped regions.
For positive values of 𝑉𝐺𝑆, the positive gate will draw additional
electrons (free carriers from the p-type substarte and hence 𝐼𝐷
increases.)
DEPLETION-TYPE MOSFET CAN OPERATE IN TWO
MODES:
Depletion mode
Enhancement mode
D-TYPE MOSFET IN DEPLETION MODE
@ 𝑉𝐺𝑆 > 0
𝐼𝐷 increase above the 𝐼𝐷𝑆𝑆
2
𝑉𝐺𝑆
𝐼𝐷 = 𝐼𝐷𝑆𝑆 1
𝑉
−
𝑝
Note:
𝑉𝐺𝑆 is now positive polarity
D-TYPE MOSFET SYMBOLS
ENHANCEMENT-TYP
E MOSFET
ENHANCEMENT-TYPE MOSFET CONSTRUCTION
The Drain (D) and Source (S)
connect to the to n-doped
regions.
There is no channel
𝑉 =𝑉 −
𝐷𝑠𝑎𝑡 𝐺𝑆
𝑉
𝑇
E-TYPE MOSFET TRANSFER CURVE
To determine 𝐼𝐷 given
𝑉𝐺𝑆: Where,
𝑉𝑇 is the threshold voltage or voltage at which the MOSFET turns on.
𝑘, a constant, can be determined by using values at a specific point and the
formula:
FOR EXAMPLE:
Substituting 𝐼𝐷(𝑜𝑛) = 10𝑚𝐴 𝑤ℎ𝑒𝑛 𝑉𝐺𝑆(𝑜𝑛) = 8𝑉
10𝑚𝐴
𝑘=
(8𝑉 − 2𝑉)2
𝑨
= 𝟎. 𝟐𝟕𝟖𝒙𝟏𝟎−𝟑
𝑽𝟐
Note:
For values of 𝑉𝐺𝑆 less than the threshold level, the drain current of an enhancement
type MOSFET is 0 mA.
2
𝐼𝐷 = 𝑘(𝑉𝐺𝑆 − 𝑉𝑇)
𝑘 = 0.278𝑥10−3
𝐼𝐷 = 0.278𝑚𝐴/𝑉2(𝑉𝐺𝑆 − 2𝑉)2
𝐼𝐷 = 0.278𝑚𝐴/𝑉2(4𝑉 − 2𝑉)2
𝑰𝑫 = 𝟏. 𝟏𝟏𝒎𝑨
MOSFET SYMBOLS
VMOS
VERTICAL MOSFETS
VMOS CHARACTERISTICS:
Boylestad, R. L., Nashelsky, L., & Li, L. (2002). Electronic devices and
circuit
theory (Vol. 11). Englewood Cliffs, NJ: Prentice Hall.
Boylestad, R. L. (2010). Introductory circuit analysis. Pearson Education.